Vladimir Ivantsov

Person

Oceanside, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
HVPE apparatus and methods for growing indium nitride and indium ni...
- Patent number 11,661,673
- Issue date May 30, 2023
- Ostendo Technologies, Inc.
- Alexander L. Syrkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for producing composite GaN nanocolumns and light emitting...
- Patent number 11,322,652
- Issue date May 3, 2022
- Ostendo Technologies, Inc.
- Anna Volkova
- C30 - CRYSTAL GROWTH
Information Patent Grant
Backflow reactor liner for protection of growth surfaces and for ba...
- Patent number 9,577,143
- Issue date Feb 21, 2017
- Ostendo Technologies, Inc.
- Lisa Shapovalov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semi-polar III-nitride films and materials and method for making th...
- Patent number 9,443,727
- Issue date Sep 13, 2016
- Ostendo Technologies, Inc.
- Vitali Soukhoveev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and methods for controlling gas flows in a HVPE reactor
- Patent number 9,416,464
- Issue date Aug 16, 2016
- Ostendo Technologies, Inc.
- Vladimir A. Dmitriev
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Free HCL used during pretreatment and AlGaN growth to control growt...
- Patent number 9,023,673
- Issue date May 5, 2015
- Ostendo Technologies, Inc.
- Lisa Shapovalov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for substrate pretreatment to achieve high-quality III-nitri...
- Patent number 8,728,938
- Issue date May 20, 2014
- Ostendo Technologies, Inc.
- Vladimir Ivantsov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -...
- Patent number 8,673,074
- Issue date Mar 18, 2014
- Ostendo Technologies, Inc.
- Alexander Usikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
HVPE apparatus and methods for growth of p-type single crystal grou...
- Patent number 8,647,435
- Issue date Feb 11, 2014
- Ostendo Technologies, Inc.
- Vladimir A. Dmitriev
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Bulk GaN and AlGaN single crystals
- Patent number 8,372,199
- Issue date Feb 12, 2013
- Freiberger Compound Materials GmbH
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Bulk GaN and AlGaN single crystals
- Patent number 8,092,596
- Issue date Jan 10, 2012
- Freiberger Compound Materials GmbH
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
HVPE apparatus and methods for growth of indium containing material...
- Patent number 7,727,333
- Issue date Jun 1, 2010
- Technologies and Devices International, Inc.
- Alexander L. Syrkin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 7,611,586
- Issue date Nov 3, 2009
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for achieving low defect density AlGaN single crystal boules
- Patent number 7,556,688
- Issue date Jul 7, 2009
- Freiberger Compound Materials GmbH
- Yuri V. Melnik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 7,279,047
- Issue date Oct 9, 2007
- Technologies and Devices, International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Bulk GaN and ALGaN single crystals
- Patent number 6,936,357
- Issue date Aug 30, 2005
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 6,656,285
- Issue date Dec 2, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for achieving low defect density GaN single crystal boules
- Patent number 6,616,757
- Issue date Sep 9, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating bulk GaN single crystals
- Patent number 6,613,143
- Issue date Sep 2, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for fabricating bulk AlGaN single crystals
- Patent number 6,576,054
- Issue date Jun 10, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
Methods for Producing Composite GaN Nanocolumns and Light Emitting...
- Publication number 20170170363
- Publication date Jun 15, 2017
- OSTENDO TECHNOLOGIES, INC.
- Anna Volkova
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semi-Polar III-Nitride Films and Materials and Method for Making th...
- Publication number 20140353685
- Publication date Dec 4, 2014
- Vitali Soukhoveev
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Substrate Pretreatment To Achieve High-Quality III-Nitri...
- Publication number 20130337639
- Publication date Dec 19, 2013
- OSTENDO TECHNOLOGIES, INC.
- Vladimir Ivantsov
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride...
- Publication number 20100012948
- Publication date Jan 21, 2010
- OSTENDO TECHNOLOGIES, INC.
- Alexander Usikov
- C30 - CRYSTAL GROWTH
Information Patent Application
BULK GaN AND AlGaN SINGLE CRYSTALS
- Publication number 20090148984
- Publication date Jun 11, 2009
- Yuri V. MELNIK
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ACHIEVING LOW DEFECT DENSITY ALGAN SINGLE CRYSTAL BOULES
- Publication number 20090050913
- Publication date Feb 26, 2009
- Freiberger Compound Materials GmbH
- Yuri MELNIK
- C30 - CRYSTAL GROWTH
Information Patent Application
BULK GaN AND AlGaN SINGLE CRYSTALS
- Publication number 20080257256
- Publication date Oct 23, 2008
- Yuri V. MELNIK
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...
- Publication number 20080022926
- Publication date Jan 31, 2008
- TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AIGaN single crystals
- Publication number 20050244997
- Publication date Nov 3, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for achieving low defect density AlGaN single crystal boules
- Publication number 20050212001
- Publication date Sep 29, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AlGaN single crystals
- Publication number 20050164044
- Publication date Jul 28, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Reactor for extended duration growth of gallium containing single c...
- Publication number 20050056222
- Publication date Mar 17, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AlGaN single crystals
- Publication number 20030226496
- Publication date Dec 11, 2003
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...
- Publication number 20030221619
- Publication date Dec 4, 2003
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ACHIEVING LOW DEFECT DENSITY AIGAN SINGLE CRYSTAL BOULES
- Publication number 20030205193
- Publication date Nov 6, 2003
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH

Vladimir Ivantsov

Person

Patents Grantslast 30 patents

HVPE apparatus and methods for growing indium nitride and indium ni...

Methods for producing composite GaN nanocolumns and light emitting...

Backflow reactor liner for protection of growth surfaces and for ba...

Semi-polar III-nitride films and materials and method for making th...

Apparatus and methods for controlling gas flows in a HVPE reactor

Free HCL used during pretreatment and AlGaN growth to control growt...

Method for substrate pretreatment to achieve high-quality III-nitri...

Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -...

HVPE apparatus and methods for growth of p-type single crystal grou...

Bulk GaN and AlGaN single crystals

Bulk GaN and AlGaN single crystals

HVPE apparatus and methods for growth of indium containing material...

Reactor for extended duration growth of gallium containing single c...

Method for achieving low defect density AlGaN single crystal boules

Reactor for extended duration growth of gallium containing single c...

Bulk GaN and ALGaN single crystals

Reactor for extended duration growth of gallium containing single c...

Method for achieving low defect density GaN single crystal boules

Method for fabricating bulk GaN single crystals

Method for fabricating bulk AlGaN single crystals

Patents Applicationslast 30 patents

Methods for Producing Composite GaN Nanocolumns and Light Emitting...

Semi-Polar III-Nitride Films and Materials and Method for Making th...

Method for Substrate Pretreatment To Achieve High-Quality III-Nitri...

Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride...

BULK GaN AND AlGaN SINGLE CRYSTALS

METHOD FOR ACHIEVING LOW DEFECT DENSITY ALGAN SINGLE CRYSTAL BOULES

BULK GaN AND AlGaN SINGLE CRYSTALS

REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...

Bulk GaN and AIGaN single crystals

Method for achieving low defect density AlGaN single crystal boules

Bulk GaN and AlGaN single crystals

Reactor for extended duration growth of gallium containing single c...

Bulk GaN and AlGaN single crystals

REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...

METHOD FOR ACHIEVING LOW DEFECT DENSITY AIGAN SINGLE CRYSTAL BOULES