Wayne Grabowski

Person

Los Altos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Laterally-graded doping of materials
- Patent number 9,768,274
- Issue date Sep 19, 2017
- Power Integrations, Inc.
- Wayne B. Grabowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor device structure with cylindrically-shaped regions
- Patent number 9,543,396
- Issue date Jan 10, 2017
- Power Integrations, Inc.
- Sorin Stefan Georgescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposit/etch for tapered oxide
- Patent number 9,472,630
- Issue date Oct 18, 2016
- Power Integrations, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposit/etch for tapered oxide
- Patent number 8,765,609
- Issue date Jul 1, 2014
- Power Integrations, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segmented pillar layout for a high-voltage vertical transistor
- Patent number 8,552,493
- Issue date Oct 8, 2013
- Power Integrations, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segmented pillar layout for a high-voltage vertical transistor
- Patent number 7,816,731
- Issue date Oct 19, 2010
- Power Integrations, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segmented pillar layout for a high-voltage vertical transistor
- Patent number 7,557,406
- Issue date Jul 7, 2009
- Power Integrations, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench semiconductor device having gate oxide layer with multiple t...
- Patent number 7,282,412
- Issue date Oct 16, 2007
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench semiconductor device having gate oxide layer with multiple t...
- Patent number 7,276,411
- Issue date Oct 2, 2007
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench semiconductor device having gate oxide layer with multiple t...
- Patent number 7,238,568
- Issue date Jul 3, 2007
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET for high switching speeds
- Patent number 7,115,958
- Issue date Oct 3, 2006
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming trench transistor with chained implanted body inc...
- Patent number 7,052,963
- Issue date May 30, 2006
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned trench transistor using etched contact
- Patent number 6,924,198
- Issue date Aug 2, 2005
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench semiconductor device having gate oxide layer with multiple t...
- Patent number 6,900,100
- Issue date May 31, 2005
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET for high switching speeds
- Patent number 6,825,536
- Issue date Nov 30, 2004
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process for a super-self-aligned trench-gated DMOS with...
- Patent number 6,756,274
- Issue date Jun 29, 2004
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-self-aligned trench-gated DMOS with reduced on-resistance
- Patent number 6,750,507
- Issue date Jun 15, 2004
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET for high switching speeds
- Patent number 6,555,883
- Issue date Apr 29, 2003
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-self-aligned fabrication process of trench-gate DMOS with ove...
- Patent number 6,413,822
- Issue date Jul 2, 2002
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of manufacturing Trench gate semiconductor device having ga...
- Patent number 6,291,298
- Issue date Sep 18, 2001
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vertical planar DMOSFET with self-aligned contact
- Patent number 6,277,695
- Issue date Aug 21, 2001
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vertical mosfet device having voltage clamped gat...
- Patent number 6,268,242
- Issue date Jul 31, 2001
- Richard K. Williams
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Low resistance power MOSFET or other device containing silicon-germ...
- Patent number 6,239,463
- Issue date May 29, 2001
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical trench-gated power MOSFET having stripe geometry and high...
- Patent number 6,204,533
- Issue date Mar 20, 2001
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gated power MOSFET with protective diode
- Patent number 6,140,678
- Issue date Oct 31, 2000
- Siliconix Incorporated
- Wayne B. Grabowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gated Schottky diode with integral clamping diode
- Patent number 6,078,090
- Issue date Jun 20, 2000
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical DMOS field effect transistor with conformal buried layer f...
- Patent number 6,072,216
- Issue date Jun 6, 2000
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gated MOSFET with bidirectional voltage clamping
- Patent number 6,049,108
- Issue date Apr 11, 2000
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gated MOSFET with integral temperature detection diode
- Patent number 6,046,470
- Issue date Apr 4, 2000
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Long channel trench-gated power MOSFET having fully depleted body r...
- Patent number 5,998,834
- Issue date Dec 7, 1999
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERALLY-GRADED DOPING OF MATERIALS
- Publication number 20160149018
- Publication date May 26, 2016
- Power Integrations, Inc.
- Wayne B. Grabowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Transistor Device Structure with Cylindrically-Shaped Regions
- Publication number 20150171174
- Publication date Jun 18, 2015
- Power Integrations, Inc.
- Sorin Stefan Georgescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSIT/ETCH FOR TAPERED OXIDE
- Publication number 20140187019
- Publication date Jul 3, 2014
- Power Integrations, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A TAPERED OXIDE FROM A THICK OXIDE LAYER
- Publication number 20140045318
- Publication date Feb 13, 2014
- Power Integrations, Inc.
- Vijay PARTHASARATHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Segmented Pillar Layout for a High-Voltage Vertical Transistor
- Publication number 20140042533
- Publication date Feb 13, 2014
- Power Integrations, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSIT/ETCH FOR TAPERED OXIDE
- Publication number 20140030868
- Publication date Jan 30, 2014
- Power Integrations, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Segmented pillar layout for a high-voltage vertical transistor
- Publication number 20090273023
- Publication date Nov 5, 2009
- Power Integrations, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Segmented pillar layout for a high-voltage vertical transistor
- Publication number 20090134457
- Publication date May 28, 2009
- Power Integrations, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Segmented pillar layout for a high-voltage vertical transistor
- Publication number 20080197417
- Publication date Aug 21, 2008
- Power Integrations, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench semiconductor device having gate oxide layer with mulitiple...
- Publication number 20050215013
- Publication date Sep 29, 2005
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench semiconductor device having gate oxide layer with multiple t...
- Publication number 20050215012
- Publication date Sep 29, 2005
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench semiconductor device having gate oxide layer with multiple t...
- Publication number 20050215027
- Publication date Sep 29, 2005
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral power MOSFET for high switching speeds
- Publication number 20050077583
- Publication date Apr 14, 2005
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench semiconductor device having gate oxide layer with mulitiple...
- Publication number 20040203200
- Publication date Oct 14, 2004
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench transistor with chained implanted body
- Publication number 20040191994
- Publication date Sep 30, 2004
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned trench transistor using etched contact
- Publication number 20040185622
- Publication date Sep 23, 2004
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral power MOSFET for high switching speeds
- Publication number 20030137016
- Publication date Jul 24, 2003
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL POWER MOSFET FOR HIGH SWITCHING SPEEDS
- Publication number 20030080388
- Publication date May 1, 2003
- Power Integrations, Inc.
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super-self-aligned trench-gated DMOS with reduced on-resistance
- Publication number 20020195657
- Publication date Dec 26, 2002
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication process for a super-self-aligned trench-gated DMOS with...
- Publication number 20020168821
- Publication date Nov 14, 2002
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER SELF-ALIGNED TRENCH-GATE DMOS WITH REDUCED ON-RESISTANCE
- Publication number 20020019099
- Publication date Feb 14, 2002
- RICHARD K. WILLIAMS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench semiconductor device having gate oxide layer with multiple t...
- Publication number 20010026961
- Publication date Oct 4, 2001
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS

Wayne Grabowski

Person

Patents Grantslast 30 patents

Laterally-graded doping of materials

Vertical transistor device structure with cylindrically-shaped regions

Deposit/etch for tapered oxide

Deposit/etch for tapered oxide

Segmented pillar layout for a high-voltage vertical transistor

Segmented pillar layout for a high-voltage vertical transistor

Segmented pillar layout for a high-voltage vertical transistor

Trench semiconductor device having gate oxide layer with multiple t...

Trench semiconductor device having gate oxide layer with multiple t...

Trench semiconductor device having gate oxide layer with multiple t...

Lateral power MOSFET for high switching speeds

Method of forming trench transistor with chained implanted body inc...

Self-aligned trench transistor using etched contact

Trench semiconductor device having gate oxide layer with multiple t...

Lateral power MOSFET for high switching speeds

Fabrication process for a super-self-aligned trench-gated DMOS with...

Super-self-aligned trench-gated DMOS with reduced on-resistance

Lateral power MOSFET for high switching speeds

Super-self-aligned fabrication process of trench-gate DMOS with ove...

Process of manufacturing Trench gate semiconductor device having ga...

Method of forming vertical planar DMOSFET with self-aligned contact

Method of forming vertical mosfet device having voltage clamped gat...

Low resistance power MOSFET or other device containing silicon-germ...

Vertical trench-gated power MOSFET having stripe geometry and high...

Trench-gated power MOSFET with protective diode

Trench-gated Schottky diode with integral clamping diode

Vertical DMOS field effect transistor with conformal buried layer f...

Trench-gated MOSFET with bidirectional voltage clamping

Trench-gated MOSFET with integral temperature detection diode

Long channel trench-gated power MOSFET having fully depleted body r...

Patents Applicationslast 30 patents

LATERALLY-GRADED DOPING OF MATERIALS

Vertical Transistor Device Structure with Cylindrically-Shaped Regions

DEPOSIT/ETCH FOR TAPERED OXIDE

FORMING A TAPERED OXIDE FROM A THICK OXIDE LAYER

Segmented Pillar Layout for a High-Voltage Vertical Transistor

DEPOSIT/ETCH FOR TAPERED OXIDE

Segmented pillar layout for a high-voltage vertical transistor

Segmented pillar layout for a high-voltage vertical transistor

Segmented pillar layout for a high-voltage vertical transistor

Trench semiconductor device having gate oxide layer with mulitiple...

Trench semiconductor device having gate oxide layer with multiple t...

Trench semiconductor device having gate oxide layer with multiple t...

Lateral power MOSFET for high switching speeds

Trench semiconductor device having gate oxide layer with mulitiple...

Trench transistor with chained implanted body

Self-aligned trench transistor using etched contact

Lateral power MOSFET for high switching speeds

LATERAL POWER MOSFET FOR HIGH SWITCHING SPEEDS

Super-self-aligned trench-gated DMOS with reduced on-resistance

Fabrication process for a super-self-aligned trench-gated DMOS with...

SUPER SELF-ALIGNED TRENCH-GATE DMOS WITH REDUCED ON-RESISTANCE

Trench semiconductor device having gate oxide layer with multiple t...