Wayne Johnson

Person

Easton, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nucleation layer for growth of III-nitride structures
- Patent number 10,580,871
- Issue date Mar 3, 2020
- IQE plc
- Oleg Laboutin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nucleation layer for growth of III-nitride structures
- Patent number 9,917,156
- Issue date Mar 13, 2018
- IQE, plc
- Oleg Laboutin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT structure with iron-doping-stop component and methods of forming
- Patent number 9,076,812
- Issue date Jul 7, 2015
- IQE KC, LLC
- Oleg Laboutin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NUCLEATION LAYER FOR GROWTH OF III-NITRIDE STRUCTURES
- Publication number 20180277639
- Publication date Sep 27, 2018
- 1QE, pie
- Oleg Laboutin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NUCLEATION LAYER FOR GROWTH OF III-NITRIDE STRUCTURES
- Publication number 20180069085
- Publication date Mar 8, 2018
- IQE, PLC
- Oleg Laboutin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT Structure with Iron-Doping-Stop Component and Methods of Forming
- Publication number 20150001582
- Publication date Jan 1, 2015
- IQE KC, LLC
- Oleg Laboutin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITIONALLY GRADED NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20140167058
- Publication date Jun 19, 2014
- IQE, KC, LLC
- Oleg Laboutin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND ME...
- Publication number 20140151712
- Publication date Jun 5, 2014
- Yu Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE ALUMINUM NITRIDE SPACERS FOR NITRIDE HIGH ELECTRON-MOBILITY...
- Publication number 20130341635
- Publication date Dec 26, 2013
- Yu Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InGaN-Based Double Heterostructure Field Effect Transistor and Meth...
- Publication number 20130207078
- Publication date Aug 15, 2013
- Kopin Corporation
- Oleg Laboutin
- H01 - BASIC ELECTRIC ELEMENTS

Wayne Johnson

Person

Patents Grantslast 30 patents

Nucleation layer for growth of III-nitride structures

Nucleation layer for growth of III-nitride structures

HEMT structure with iron-doping-stop component and methods of forming

Patents Applicationslast 30 patents

NUCLEATION LAYER FOR GROWTH OF III-NITRIDE STRUCTURES

NUCLEATION LAYER FOR GROWTH OF III-NITRIDE STRUCTURES

HEMT Structure with Iron-Doping-Stop Component and Methods of Forming

COMPOSITIONALLY GRADED NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTOR

ENHANCEMENT-MODE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND ME...

DOUBLE ALUMINUM NITRIDE SPACERS FOR NITRIDE HIGH ELECTRON-MOBILITY...

InGaN-Based Double Heterostructure Field Effect Transistor and Meth...