Wei Cao

Person

Mipitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory with different word line to word line pitches
- Patent number 12,176,037
- Issue date Dec 24, 2024
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
In-place write techniques without erase in a memory device
- Patent number 12,045,511
- Issue date Jul 23, 2024
- SanDisk Technologies LLC
- Xiang Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Sequential deposition of tantalum nitride using a tantalum-containi...
- Patent number 7,867,896
- Issue date Jan 11, 2011
- Applied Materials, Inc.
- Wei Cao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multi-step barrier deposition method
- Patent number 7,576,002
- Issue date Aug 18, 2009
- Applied Materials, Inc.
- Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sequential deposition of tantalum nitride using a tantalum-containi...
- Patent number 7,514,358
- Issue date Apr 7, 2009
- Applied Materials, Inc.
- Wei Cao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Sequential deposition of tantalum nitride using a tantalum-containi...
- Patent number 6,972,267
- Issue date Dec 6, 2005
- Applied Materials, Inc.
- Wei Cao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Tantalum barrier layer for copper metallization
- Patent number 6,953,742
- Issue date Oct 11, 2005
- Applied Materials, Inc.
- Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing thin films by catalytic enhancement
- Patent number 6,811,814
- Issue date Nov 2, 2004
- Applied Materials, Inc.
- Ling Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for removing an underlying layer and depositing a barrier l...
- Patent number 6,660,622
- Issue date Dec 9, 2003
- Applied Materials, Inc.
- Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper interconnect barrier layer structure and formation method
- Patent number 6,607,976
- Issue date Aug 19, 2003
- Applied Materials, Inc.
- Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using a barrier sputter reactor to remove an underlying b...
- Patent number 6,498,091
- Issue date Dec 24, 2002
- Applied Materials, Inc.
- Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic recording media having CrTiX underlayers to reduce circumf...
- Patent number 6,218,033
- Issue date Apr 17, 2001
- Akashic Memories Corporation
- Wei Cao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
ENABLING SIGNIFICANT SCALING OF WORDLINE SWITCH WITH WORDLINE DEPEN...
- Publication number 20240395330
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
RECONFIGURABLE LINES IN DIFFERENT SUB-BLOCK MODES IN A NAND MEMORY...
- Publication number 20240386971
- Publication date Nov 21, 2024
- Western Digital Technologies, Inc.
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
POSITIVE SENSING IN LOW POWER OPERATION MODE IN A MEMORY DEVICE
- Publication number 20240386969
- Publication date Nov 21, 2024
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
NEGATIVE WORD LINE ENABLED PRE-BOOSTING STRATEGY TO IMPROVE NAND PR...
- Publication number 20240355401
- Publication date Oct 24, 2024
- SANDISK TECHNOLOGIES LLC
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
HOLE CHANNEL PRE-CHARGE TO ENABLE LARGE-VOLUME IN-PLACE DATA SANITI...
- Publication number 20240319888
- Publication date Sep 26, 2024
- SANDISK TECHNOLOGIES LLC
- Wei Cao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HETEROJUNCTION SOURCE LA...
- Publication number 20240268115
- Publication date Aug 8, 2024
- SANDISK TECHNOLOGIES LLC
- Wei CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIER SUB-BLOCK MODE OPERATION
- Publication number 20240192873
- Publication date Jun 13, 2024
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HYBRID TRIPLE LEVEL CELL PROGRAMMING ALGORITHM FOR ON PITCH SCALING...
- Publication number 20240184468
- Publication date Jun 6, 2024
- SANDISK TECHNOLOGIES LLC
- Wei Cao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY WITH SUB-BLOCKS
- Publication number 20240161828
- Publication date May 16, 2024
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY WITH DIFFERENT WORD LINE TO WORD LINE PITCHES
- Publication number 20240112735
- Publication date Apr 4, 2024
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH PERFORMANCE VERIFY TECHNIQUES IN A MEMORY DEVICE
- Publication number 20240112744
- Publication date Apr 4, 2024
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
IN-PLACE WRITE TECHNIQUES WITHOUT ERASE IN A MEMORY DEVICE
- Publication number 20240069803
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEQUENTIAL DEPOSITION OF TANTALUM NITRIDE USING A TANTALUM-CONTAINI...
- Publication number 20110070730
- Publication date Mar 24, 2011
- Wei Cao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEQUENTIAL DEPOSITION OF TANTALUM NITRIDE USING A TANTALUM-CONTAINI...
- Publication number 20090197406
- Publication date Aug 6, 2009
- Applied Materials, Inc.
- Wei Cao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Sequential deposition of tantalum nitride using a tantalum-containi...
- Publication number 20060019494
- Publication date Jan 26, 2006
- Wei Cao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Multi-step barrier deposition method
- Publication number 20050255690
- Publication date Nov 17, 2005
- Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tantalum barrier layer for copper metallization
- Publication number 20050074968
- Publication date Apr 7, 2005
- Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sequential deposition of tantalum nitride using a tantalum-containi...
- Publication number 20030224600
- Publication date Dec 4, 2003
- Wei Cao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Process for removing an underlying layer and depositing a barrier l...
- Publication number 20030087520
- Publication date May 8, 2003
- Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Copper interconnect barrier layer structure and formation method
- Publication number 20030059980
- Publication date Mar 27, 2003
- Ling Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for growing thin films by catalytic enhancement
- Publication number 20020127336
- Publication date Sep 12, 2002
- APPLIED MATERIALS, INC.
- Ling Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for growing thin films by catalytic enhancement
- Publication number 20020122884
- Publication date Sep 5, 2002
- Ling Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Person

Patents Grantslast 30 patents

Non-volatile memory with different word line to word line pitches

In-place write techniques without erase in a memory device

Sequential deposition of tantalum nitride using a tantalum-containi...

Multi-step barrier deposition method

Sequential deposition of tantalum nitride using a tantalum-containi...

Sequential deposition of tantalum nitride using a tantalum-containi...

Tantalum barrier layer for copper metallization

Method for growing thin films by catalytic enhancement

Process for removing an underlying layer and depositing a barrier l...

Copper interconnect barrier layer structure and formation method

Method of using a barrier sputter reactor to remove an underlying b...

Magnetic recording media having CrTiX underlayers to reduce circumf...

Patents Applicationslast 30 patents

ENABLING SIGNIFICANT SCALING OF WORDLINE SWITCH WITH WORDLINE DEPEN...

RECONFIGURABLE LINES IN DIFFERENT SUB-BLOCK MODES IN A NAND MEMORY...

POSITIVE SENSING IN LOW POWER OPERATION MODE IN A MEMORY DEVICE

NEGATIVE WORD LINE ENABLED PRE-BOOSTING STRATEGY TO IMPROVE NAND PR...

HOLE CHANNEL PRE-CHARGE TO ENABLE LARGE-VOLUME IN-PLACE DATA SANITI...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HETEROJUNCTION SOURCE LA...

MULTI-TIER SUB-BLOCK MODE OPERATION

HYBRID TRIPLE LEVEL CELL PROGRAMMING ALGORITHM FOR ON PITCH SCALING...

NON-VOLATILE MEMORY WITH SUB-BLOCKS

NON-VOLATILE MEMORY WITH DIFFERENT WORD LINE TO WORD LINE PITCHES

HIGH PERFORMANCE VERIFY TECHNIQUES IN A MEMORY DEVICE

IN-PLACE WRITE TECHNIQUES WITHOUT ERASE IN A MEMORY DEVICE

SEQUENTIAL DEPOSITION OF TANTALUM NITRIDE USING A TANTALUM-CONTAINI...

SEQUENTIAL DEPOSITION OF TANTALUM NITRIDE USING A TANTALUM-CONTAINI...

Sequential deposition of tantalum nitride using a tantalum-containi...

Multi-step barrier deposition method

Tantalum barrier layer for copper metallization

Sequential deposition of tantalum nitride using a tantalum-containi...

Process for removing an underlying layer and depositing a barrier l...

Copper interconnect barrier layer structure and formation method

Method for growing thin films by catalytic enhancement

Method for growing thin films by catalytic enhancement