Wei GAO

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Chengdu, CN

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Patents Grantslast 30 patents

Information Patent Grant
Trench MOS device with improved single event burn-out endurance
- Patent number 10,546,951
- Issue date Jan 28, 2020
- University of Electronic Science and Technology of China
- Min Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Folded termination with internal field plate
- Patent number 10,340,332
- Issue date Jul 2, 2019
- University of Electronic Science and Technology of China
- Min Ren
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH MOS DEVICE WITH IMPROVED SINGLE EVENT BURN-OUT ENDURANCE
- Publication number 20190371937
- Publication date Dec 5, 2019
- University of Electronic Science and Technology of China
- Min REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Folded Termination with Internal Field Plate
- Publication number 20190067415
- Publication date Feb 28, 2019
- University of Electronic Science and Technology of China
- Min REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Edge Termination Structure for Power Semiconductor Devices
- Publication number 20180026129
- Publication date Jan 25, 2018
- University of Electronic Science and Technology of China
- Min REN
- H01 - BASIC ELECTRIC ELEMENTS