Wei Long

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor-on-insulator body-source contact and method
- Patent number 6,790,750
- Issue date Sep 14, 2004
- Advanced Micro Devices, Inc.
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniform gate/dielectric field effect transistor
- Patent number 6,744,101
- Issue date Jun 1, 2004
- Advanced Micro Devices, Inc.
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Determination of thermal resistance for field effect transistor for...
- Patent number 6,608,352
- Issue date Aug 19, 2003
- Advanced Micro Devices, Inc.
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator body-source contact using shallow-doped...
- Patent number 6,525,381
- Issue date Feb 25, 2003
- Advanced Micro Devices, Inc.
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator body-source contact and method
- Patent number 6,441,434
- Issue date Aug 27, 2002
- Advanced Micro Devices, Inc.
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator transistor with recessed source and drain
- Patent number 6,437,404
- Issue date Aug 20, 2002
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Determination of thermal resistance for field effect transistor for...
- Patent number 6,423,604
- Issue date Jul 23, 2002
- Advanced Micro Devices, Inc.
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI (Shallow Trench Isolation) structures for minimizing leakage cu...
- Patent number 6,420,770
- Issue date Jul 16, 2002
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High K dielectric de-coupling capacitor embedded in backend interco...
- Patent number 6,417,556
- Issue date Jul 9, 2002
- Advanced Micro Devices, Inc.
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual silicide process to reduce gate resistance
- Patent number 6,391,767
- Issue date May 21, 2002
- Advanced Micro Devices, Inc.
- Carl Robert Huster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator body-source contact using additional dra...
- Patent number 6,373,103
- Issue date Apr 16, 2002
- Advanced Micro Devices, Inc.
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High k interconnect de-coupling capacitor with damascene process
- Patent number 6,323,099
- Issue date Nov 27, 2001
- Advanced Micro Devices
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a gate structures having a longer length toward the...
- Patent number 6,306,710
- Issue date Oct 23, 2001
- Advanced Micro Devices, Inc.
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for accurate channel-length extraction in MOSFETs
- Patent number 6,275,972
- Issue date Aug 14, 2001
- Advanced Micro Devices, Inc.
- Wei Long
- G01 - MEASURING TESTING
Information Patent Grant
Sti (shallow trench isolation) structures for minimizing leakage cu...
- Patent number 6,274,420
- Issue date Aug 14, 2001
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating high-performance submicron MOSFET with later...
- Patent number 6,255,219
- Issue date Jul 3, 2001
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniform gate/dielectric field effect transistor
- Patent number 6,225,669
- Issue date May 1, 2001
- Advanced Micro Devices, Inc.
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating high-performance submicron mosfet with later...
- Patent number 6,168,999
- Issue date Jan 2, 2001
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Determination of parasitic capacitance between the gate and drain/s...
- Patent number 6,169,302
- Issue date Jan 2, 2001
- Advanced Micro Devices, Inc.
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for measuring gate length and drain/source gate overlap
- Patent number 6,166,558
- Issue date Dec 26, 2000
- Advanced Micro Devices, Inc.
- Chun Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a dual material gate of a short channel fiel...
- Patent number 6,153,534
- Issue date Nov 28, 2000
- Advanced Micro Devices, Inc.
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
C-V method to extract lateral channel doping profiles of MOSFETs
- Patent number 6,069,485
- Issue date May 30, 2000
- Advanced Micro Devices, Inc.
- Wei Long
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
High K dielectric de-coupling capacitor embedded in backend interco...
- Publication number 20020036336
- Publication date Mar 28, 2002
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-uniform gate/dielectric field effect transistor
- Publication number 20010017390
- Publication date Aug 30, 2001
- Wei Long
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor-on-insulator body-source contact and method

Non-uniform gate/dielectric field effect transistor

Determination of thermal resistance for field effect transistor for...

Semiconductor-on-insulator body-source contact using shallow-doped...

Semiconductor-on-insulator body-source contact and method

Semiconductor-on-insulator transistor with recessed source and drain

Determination of thermal resistance for field effect transistor for...

STI (Shallow Trench Isolation) structures for minimizing leakage cu...

High K dielectric de-coupling capacitor embedded in backend interco...

Dual silicide process to reduce gate resistance

Semiconductor-on-insulator body-source contact using additional dra...

High k interconnect de-coupling capacitor with damascene process

Fabrication of a gate structures having a longer length toward the...

Method for accurate channel-length extraction in MOSFETs

Sti (shallow trench isolation) structures for minimizing leakage cu...

Method for fabricating high-performance submicron MOSFET with later...

Non-uniform gate/dielectric field effect transistor

Method for fabricating high-performance submicron mosfet with later...

Determination of parasitic capacitance between the gate and drain/s...

Method for measuring gate length and drain/source gate overlap

Method for fabricating a dual material gate of a short channel fiel...

C-V method to extract lateral channel doping profiles of MOSFETs

Patents Applicationslast 30 patents

High K dielectric de-coupling capacitor embedded in backend interco...

Non-uniform gate/dielectric field effect transistor