Wei Ma

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Clifton Park, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Additional spacer for self-aligned contact for only high voltage Fi...
- Patent number 10,991,689
- Issue date Apr 27, 2021
- GLOBALFOUNDRIES U.S. INC.
- Abu Naser M. Zainuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate for a field effect transistor and method
- Patent number 10,833,169
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming gate structures for transistor devices on an IC...
- Patent number 10,755,982
- Issue date Aug 25, 2020
- GLOBALFOUNDRIES Inc.
- Abu Naser M. Zainuddin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN STRUCTURES OF FINFET DEVICES
- Publication number 20210091222
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- TAO CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE FOR A FIELD EFFECT TRANSISTOR AND METHOD
- Publication number 20200335602
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADDITIONAL SPACER FOR SELF-ALIGNED CONTACT FOR ONLY HIGH VOLTAGE FI...
- Publication number 20200321332
- Publication date Oct 8, 2020
- GLOBALFOUNDRIES Inc.
- Abu Naser M. Zainuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SHORT-CHANNEL AND LONG-CHANNEL TRANSISTOR DEVICE...
- Publication number 20200273953
- Publication date Aug 27, 2020
- GLOBALFOUNDRIES INC.
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS