Weiguo Liu

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
- Patent number 12,084,790
- Issue date Sep 10, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low etch pit density, low slip line density, and low strain indium...
- Patent number 12,054,851
- Issue date Aug 6, 2024
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
- Patent number 11,680,340
- Issue date Jun 20, 2023
- AXT, Inc.
- Rajaram Shetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low etch pit density, low slip line density, and low strain indium...
- Patent number 11,608,569
- Issue date Mar 21, 2023
- AXT, Inc.
- Morris Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monocrystalline germanium wafers, method for preparing the same, me...
- Patent number 11,127,867
- Issue date Sep 21, 2021
- Beijing Tongmei Xtal Technology Co., Ltd.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Grant
Germanium ingots/wafers having low micro-pit density (MPD) as well...
- Patent number 8,647,433
- Issue date Feb 11, 2014
- AXT, Inc.
- Weiguo Liu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Systems, methods and substrates of monocrystalline germanium crysta...
- Patent number 8,506,706
- Issue date Aug 13, 2013
- AXT, Inc.
- Weiguo Liu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Low etch pit density (EPD) semi-insulating III-V wafers
- Patent number 8,361,225
- Issue date Jan 29, 2013
- AXT, Inc.
- Weiguo Liu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal growth apparatus and method
- Patent number 8,231,727
- Issue date Jul 31, 2012
- AXT, Inc.
- Weiguo Liu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Low etch pit density (EPD) semi-insulating GaAs wafers
- Patent number 7,566,641
- Issue date Jul 28, 2009
- AXT, Inc.
- Weiguo Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20240426025
- Publication date Dec 26, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20240384436
- Publication date Nov 21, 2024
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...
- Publication number 20230416941
- Publication date Dec 28, 2023
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20230407522
- Publication date Dec 21, 2023
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20230212784
- Publication date Jul 6, 2023
- AXT, Inc.
- Morris Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...
- Publication number 20220298673
- Publication date Sep 22, 2022
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
GERMANIUM SINGLE-CRYSTAL WAFER, METHOD FOR PREPARING GERMANIUM SING...
- Publication number 20220238746
- Publication date Jul 28, 2022
- BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Rajaram SHETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20210269939
- Publication date Sep 2, 2021
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Application
Monocrystalline Germanium Wafers, Method for Preparing the Same, Me...
- Publication number 20210175377
- Publication date Jun 10, 2021
- BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Rajaram SHETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant
- Publication number 20200190697
- Publication date Jun 18, 2020
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20200190696
- Publication date Jun 18, 2020
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH APPARATUS AND METHOD
- Publication number 20120282133
- Publication date Nov 8, 2012
- AXT. Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
Low Etch Pit Density (EPD) Semi-Insulating III-V Wafers
- Publication number 20110293890
- Publication date Dec 1, 2011
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
GERMANIUM INGOTS/WAFERS HAVING LOW MICRO-PIT DENSITY (MPD) AS WELL...
- Publication number 20110143091
- Publication date Jun 16, 2011
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY (EPD) SEMI-INSULATING III-V WAFERS
- Publication number 20110089538
- Publication date Apr 21, 2011
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
Systems, Methods and Substrates of Monocrystalline Germanium Crysta...
- Publication number 20100116196
- Publication date May 13, 2010
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
Low Etch Pit Density (EPD) Semi-Insulating GaAs Wafers
- Publication number 20100001288
- Publication date Jan 7, 2010
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH APPARATUS AND METHOD
- Publication number 20090249994
- Publication date Oct 8, 2009
- AXT Technology, Inc.
- Weiguo LIU
- C30 - CRYSTAL GROWTH
Information Patent Application
Low etch pit density (EPD) semi-insulating GaAs wafers
- Publication number 20080280427
- Publication date Nov 13, 2008
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for growing monocrystalline group II-VI and III-V compounds
- Publication number 20030172870
- Publication date Sep 18, 2003
- AXT, Inc.
- Xiao Gordon Liu
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

Low etch pit density, low slip line density, and low strain indium...

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

Low etch pit density, low slip line density, and low strain indium...

Monocrystalline germanium wafers, method for preparing the same, me...

Germanium ingots/wafers having low micro-pit density (MPD) as well...

Systems, methods and substrates of monocrystalline germanium crysta...

Low etch pit density (EPD) semi-insulating III-V wafers

Crystal growth apparatus and method

Low etch pit density (EPD) semi-insulating GaAs wafers

Patents Applicationslast 30 patents

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...

METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...

METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...

GERMANIUM SINGLE-CRYSTAL WAFER, METHOD FOR PREPARING GERMANIUM SING...

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...

Monocrystalline Germanium Wafers, Method for Preparing the Same, Me...

Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

CRYSTAL GROWTH APPARATUS AND METHOD

Low Etch Pit Density (EPD) Semi-Insulating III-V Wafers

GERMANIUM INGOTS/WAFERS HAVING LOW MICRO-PIT DENSITY (MPD) AS WELL...

LOW ETCH PIT DENSITY (EPD) SEMI-INSULATING III-V WAFERS

Systems, Methods and Substrates of Monocrystalline Germanium Crysta...

Low Etch Pit Density (EPD) Semi-Insulating GaAs Wafers

CRYSTAL GROWTH APPARATUS AND METHOD

Low etch pit density (EPD) semi-insulating GaAs wafers

Apparatus for growing monocrystalline group II-VI and III-V compounds