WENJUN LI

Person

Saratoga Springs, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET with shorter fin height in drain region than source region a...
- Patent number 12,132,080
- Issue date Oct 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure with fin having subfin extents with different lateral...
- Patent number 11,545,575
- Issue date Jan 3, 2023
- GLOBALFOUNDRIES U.S. INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including asymmetric, recessed source...
- Patent number 11,532,745
- Issue date Dec 20, 2022
- GLOBALFOUNDRIES U.S. INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS finFET structure with buried insulator layer and method for f...
- Patent number 11,410,998
- Issue date Aug 9, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked-gate transistors
- Patent number 11,404,415
- Issue date Aug 2, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with hybrid source/drain regions
- Patent number 11,374,002
- Issue date Jun 28, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with an asymmetrical source and drain
- Patent number 11,239,366
- Issue date Feb 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with shorter fin height in drain region than source region a...
- Patent number 11,211,453
- Issue date Dec 28, 2021
- GLOBALFOUNDRIES U.S. INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cascode cell
- Patent number 11,158,624
- Issue date Oct 26, 2021
- GLOBALFOUNDRIES U.S. INC.
- Wenjun Li
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
FINFET WITH SHORTER FIN HEIGHT IN DRAIN REGION THAN SOURCE REGION A...
- Publication number 20220052158
- Publication date Feb 17, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH HYBRID SOURCE/DRAIN REGIONS
- Publication number 20220028854
- Publication date Jan 27, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE WITH FIN HAVING SUBFIN EXTENTS WITH DIFFERENT LATERAL...
- Publication number 20220005954
- Publication date Jan 6, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTORS SUITABLE FOR RADIO-FREQUENCY APPLICATIONS
- Publication number 20210407935
- Publication date Dec 30, 2021
- GLOBALFOUNDRIES U.S. Inc.
- WENJUN LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL GATE STRUCTURE FOR AN LDMOS TRANSISTOR DEVICE
- Publication number 20210351293
- Publication date Nov 11, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CASCODE CELL
- Publication number 20210335772
- Publication date Oct 28, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Wenjun LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE INCLUDING ASYMMETRIC, RECESSED SOURCE...
- Publication number 20210273094
- Publication date Sep 2, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS FINFET STRUCTURE WITH BURIED INSULATOR LAYER AND METHOD FOR F...
- Publication number 20210265342
- Publication date Aug 26, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH ASYMMETRICALLY-POSITIONED SOURCE/DRAIN REGIONS
- Publication number 20210249307
- Publication date Aug 12, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH AN ASYMMETRICAL SOURCE AND DRAIN
- Publication number 20210242339
- Publication date Aug 5, 2021
- GLOBALFOUNDRIES U.S, Inc.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED-GATE TRANSISTORS
- Publication number 20210005605
- Publication date Jan 7, 2021
- GLOBALFOUNDRIES INC.
- Wenjun LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES OVER AN ACTIVE REGION OF A SEMICONDUCTOR DEVICE
- Publication number 20200373410
- Publication date Nov 26, 2020
- GLOBALFOUNDRIES INC.
- TUNG-HSING LEE
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

FinFET with shorter fin height in drain region than source region a...

IC structure with fin having subfin extents with different lateral...

Integrated circuit structure including asymmetric, recessed source...

LDMOS finFET structure with buried insulator layer and method for f...

Stacked-gate transistors

Transistors with hybrid source/drain regions

Transistors with an asymmetrical source and drain

FinFET with shorter fin height in drain region than source region a...

Cascode cell

Patents Applicationslast 30 patents

FINFET WITH SHORTER FIN HEIGHT IN DRAIN REGION THAN SOURCE REGION A...

TRANSISTORS WITH HYBRID SOURCE/DRAIN REGIONS

IC STRUCTURE WITH FIN HAVING SUBFIN EXTENTS WITH DIFFERENT LATERAL...

SEMICONDUCTOR TRANSISTORS SUITABLE FOR RADIO-FREQUENCY APPLICATIONS

NOVEL GATE STRUCTURE FOR AN LDMOS TRANSISTOR DEVICE

CASCODE CELL

INTEGRATED CIRCUIT STRUCTURE INCLUDING ASYMMETRIC, RECESSED SOURCE...

LDMOS FINFET STRUCTURE WITH BURIED INSULATOR LAYER AND METHOD FOR F...

TRANSISTORS WITH ASYMMETRICALLY-POSITIONED SOURCE/DRAIN REGIONS

TRANSISTORS WITH AN ASYMMETRICAL SOURCE AND DRAIN

STACKED-GATE TRANSISTORS

CONTACT STRUCTURES OVER AN ACTIVE REGION OF A SEMICONDUCTOR DEVICE