Wenqing Fang

Person

Nanchang, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating InGaN-based multi-quantum well layers
- Patent number 8,461,029
- Issue date Jun 11, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a p-type semiconductor structure
- Patent number 8,431,936
- Issue date Apr 30, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a low-resistivity ohmic contact to a p-type...
- Patent number 8,431,475
- Issue date Apr 30, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InGaAIN light-emitting device and manufacturing method thereof
- Patent number 8,384,100
- Issue date Feb 26, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating InGaAIN light-emitting diodes with a metal s...
- Patent number 8,383,438
- Issue date Feb 26, 2013
- Lattice Power (Jiangxi) Corporation
- Chuanbing Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device with metal support substrate
- Patent number 8,361,880
- Issue date Jan 29, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride light-emitting device with ultra-high reverse break...
- Patent number 8,053,757
- Issue date Nov 8, 2011
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and method for making same
- Patent number 7,919,784
- Issue date Apr 5, 2011
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating high-quality semiconductor light-emitting de...
- Patent number 7,902,556
- Issue date Mar 8, 2011
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication InGaAIN film and light-emitting device on a s...
- Patent number 7,888,779
- Issue date Feb 15, 2011
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating metal substrates with high-quality surfaces
- Patent number 7,758,695
- Issue date Jul 20, 2010
- Lattice Power (Jiangxi) Corporation
- Chuanbing Xiong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor light-emitting device with electrode for N-polar InGa...
- Patent number 7,705,348
- Issue date Apr 27, 2010
- Lattice Power (Jiangxi) Corporation
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device
- Patent number 7,692,205
- Issue date Apr 6, 2010
- Lattice Power (Jiangxi) Corporation
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing indium gallium aluminium nitride thin film...
- Patent number 7,615,420
- Issue date Nov 10, 2009
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING InGaN-BASED MULTI-QUANTUM WELL LAYERS
- Publication number 20120295422
- Publication date Nov 22, 2012
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILAN...
- Publication number 20110298005
- Publication date Dec 8, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILM
- Publication number 20110253972
- Publication date Oct 20, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Chuanbing Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING InGaAIN LIGHT-EMITTING DIODES WITH A METAL S...
- Publication number 20110140080
- Publication date Jun 16, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Chuanbing Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERS
- Publication number 20110133158
- Publication date Jun 9, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE LIGHT-EMITTING DEVICE WITH ULTRA-HIGH REVERSE BREAK...
- Publication number 20110006319
- Publication date Jan 13, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A LOW-RESISTIVITY OHMIC CONTACT TO A P-TYPE...
- Publication number 20100219394
- Publication date Sep 2, 2010
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A S...
- Publication number 20090050927
- Publication date Feb 26, 2009
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090026473
- Publication date Jan 29, 2009
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A P-TYPE SEMICONDUCTOR STRUCTURE
- Publication number 20080315212
- Publication date Dec 25, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Indium Gallium Aluminium Nitride Thin Film...
- Publication number 20080248633
- Publication date Oct 9, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Light-Emitting Device
- Publication number 20080246048
- Publication date Oct 9, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Light-Emitting Device with Electrode for N-Polar Inga...
- Publication number 20080230792
- Publication date Sep 25, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Light-Emitting Device with Electrode for N-Polar Inga...
- Publication number 20080230799
- Publication date Sep 25, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Light-Emitting Device With Metal Support Substrate
- Publication number 20080224154
- Publication date Sep 18, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Fabricating High-Quality Semiconductor Light-Emitting De...
- Publication number 20080210951
- Publication date Sep 4, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating metal substrates with high-quality surfaces
- Publication number 20080166582
- Publication date Jul 10, 2008
- Chuanbing Xiong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Wenqing Fang

Person

Patents Grantslast 30 patents

Method for fabricating InGaN-based multi-quantum well layers

Method for fabricating a p-type semiconductor structure

Method for fabricating a low-resistivity ohmic contact to a p-type...

InGaAIN light-emitting device and manufacturing method thereof

Method for fabricating InGaAIN light-emitting diodes with a metal s...

Semiconductor light-emitting device with metal support substrate

Gallium nitride light-emitting device with ultra-high reverse break...

Semiconductor light-emitting device and method for making same

Method for fabricating high-quality semiconductor light-emitting de...

Method of fabrication InGaAIN film and light-emitting device on a s...

Method for fabricating metal substrates with high-quality surfaces

Semiconductor light-emitting device with electrode for N-polar InGa...

Semiconductor light-emitting device

Method for manufacturing indium gallium aluminium nitride thin film...

Patents Applicationslast 30 patents

METHOD FOR FABRICATING InGaN-BASED MULTI-QUANTUM WELL LAYERS

METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILAN...

LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILM

METHOD FOR FABRICATING InGaAIN LIGHT-EMITTING DIODES WITH A METAL S...

METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERS

GALLIUM NITRIDE LIGHT-EMITTING DEVICE WITH ULTRA-HIGH REVERSE BREAK...

METHOD FOR FABRICATING A LOW-RESISTIVITY OHMIC CONTACT TO A P-TYPE...

METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A S...

InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR FABRICATING A P-TYPE SEMICONDUCTOR STRUCTURE

Method for Manufacturing Indium Gallium Aluminium Nitride Thin Film...

Semiconductor Light-Emitting Device

Semiconductor Light-Emitting Device with Electrode for N-Polar Inga...

Semiconductor Light-Emitting Device with Electrode for N-Polar Inga...

Semiconductor Light-Emitting Device With Metal Support Substrate

Method For Fabricating High-Quality Semiconductor Light-Emitting De...

Method for fabricating metal substrates with high-quality surfaces