Wenxi Zhou

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,148,714
- Issue date Nov 19, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wei Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional NAND memory device with novel support structures
- Patent number 12,144,175
- Issue date Nov 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
Information Patent Grant
Semiconductor devices having a conductive layer stacking with an in...
- Patent number 12,136,586
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with backside source contact
- Patent number 12,136,618
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices
- Patent number 12,114,498
- Issue date Oct 8, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,113,037
- Issue date Oct 8, 2024
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional NAND memory device and method of forming the same
- Patent number 12,096,631
- Issue date Sep 17, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
Information Patent Grant
Barrier layers for word line contacts in a three-dimensional NAND m...
- Patent number 12,094,767
- Issue date Sep 17, 2024
- Yangtze Memory Technologies Co., Ltd.
- Ling Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Peripheral circuit having recess gate transistors and method for fo...
- Patent number 12,089,413
- Issue date Sep 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yanwei Shi
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and method for forming the same
- Patent number 12,082,407
- Issue date Sep 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having first semiconductor structu...
- Patent number 12,082,408
- Issue date Sep 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with backside interconnect structures
- Patent number 12,082,411
- Issue date Sep 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and method for forming the same
- Patent number 12,075,621
- Issue date Aug 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,069,854
- Issue date Aug 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 12,068,250
- Issue date Aug 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,058,858
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming contact structures and semiconductor devices in...
- Patent number 12,057,372
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with support structures and method...
- Patent number 12,058,865
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming three-dimensional memory devices with backside...
- Patent number 12,048,151
- Issue date Jul 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 12,046,555
- Issue date Jul 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,048,148
- Issue date Jul 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
Information Patent Grant
Three-dimensional NAND memory device and method of forming the same
- Patent number 12,041,773
- Issue date Jul 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 12,033,944
- Issue date Jul 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 12,033,957
- Issue date Jul 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices and methods for operating the same
- Patent number 12,027,207
- Issue date Jul 2, 2024
- Yangtze Memory Technologies Co., Ltd.
- DongXue Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Local contacts of three-dimensional memory devices and methods for...
- Patent number 12,022,656
- Issue date Jun 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices
- Patent number 12,020,750
- Issue date Jun 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 12,002,757
- Issue date Jun 4, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 11,996,152
- Issue date May 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and fabrication method thereof
- Patent number 11,980,030
- Issue date May 7, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE, FABRICATION METHOD THEREOF, AND MEMORY SYSTEM
- Publication number 20240389324
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhibin Liu
Information Patent Application
PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...
- Publication number 20240389331
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yanwei Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES, FABRICATION METHODS OF SEMICONDUCTOR DEVICES...
- Publication number 20240387408
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wei Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AN...
- Publication number 20240389307
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Dongxue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE CONNECTION STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240355734
- Publication date Oct 24, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240339402
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240339404
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE INTERCONNECT STRUCTURES
- Publication number 20240341096
- Publication date Oct 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240334690
- Publication date Oct 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
Information Patent Application
METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240321777
- Publication date Sep 26, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240312522
- Publication date Sep 19, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH WORD LINES AND CONTACT LANDING
- Publication number 20240298443
- Publication date Sep 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240292629
- Publication date Aug 29, 2024
- Yangtze Memory Technologies Co., Ltd.
- Dongxue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES AND METHODS FOR OPERATING THE SAME
- Publication number 20240282376
- Publication date Aug 22, 2024
- Yangtze Memory Technologies Co., Ltd.
- DongXue ZHAO
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES TH...
- Publication number 20240282673
- Publication date Aug 22, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...
- Publication number 20240274535
- Publication date Aug 15, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240251558
- Publication date Jul 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240215273
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuancheng Yang
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240215234
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE LINE STRUCTURE TO REDUCE WAFER BOW
- Publication number 20240215239
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Shuangshuang WU
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240212753
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240215235
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240215272
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240215271
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240206148
- Publication date Jun 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240206181
- Publication date Jun 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20240203908
- Publication date Jun 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yuhui HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240188290
- Publication date Jun 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wei XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240188292
- Publication date Jun 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Cuicui Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR IMPROVED...
- Publication number 20240179901
- Publication date May 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun ZHANG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Three-dimensional memory devices and methods for forming the same

Three dimensional NAND memory device with novel support structures

Semiconductor devices having a conductive layer stacking with an in...

Three-dimensional memory device with backside source contact

Three-dimensional memory devices

Three-dimensional memory devices and methods for forming the same

Three-dimensional NAND memory device and method of forming the same

Barrier layers for word line contacts in a three-dimensional NAND m...

Peripheral circuit having recess gate transistors and method for fo...

Three-dimensional memory device and method for forming the same

Three-dimensional memory devices having first semiconductor structu...

Three-dimensional memory device with backside interconnect structures

Three-dimensional memory device and method for forming the same

Three-dimensional memory devices and methods for forming the same

3D NAND memory device and method of forming the same

Three-dimensional memory devices and methods for forming the same

Methods for forming contact structures and semiconductor devices in...

Three-dimensional memory devices with support structures and method...

Methods for forming three-dimensional memory devices with backside...

3D NAND memory device and method of forming the same

Three-dimensional memory devices and methods for forming the same

Three-dimensional NAND memory device and method of forming the same

3D NAND memory device and method of forming the same

Three-dimensional memory devices and methods for forming the same

Vertical memory devices and methods for operating the same

Local contacts of three-dimensional memory devices and methods for...

Three-dimensional memory devices

Staircase structure in three-dimensional memory device and method f...

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory device and fabrication method thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE, FABRICATION METHOD THEREOF, AND MEMORY SYSTEM

PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...

SEMICONDUCTOR DEVICES, FABRICATION METHODS OF SEMICONDUCTOR DEVICES...

FABRICATION METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AN...

STAIRCASE CONNECTION STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES

MEMORY DEVICE AND FABRICATION METHOD THEREOF

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE INTERCONNECT STRUCTURES

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

MEMORY DEVICE WITH WORD LINES AND CONTACT LANDING

THREE-DIMENSIONAL MEMORY DEVICES

VERTICAL MEMORY DEVICES AND METHODS FOR OPERATING THE SAME

METHODS FOR FORMING CONTACT STRUCTURES AND SEMICONDUCTOR DEVICES TH...

STAIRCASE STRUCTURE IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD F...

THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

GATE LINE STRUCTURE TO REDUCE WAFER BOW

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

MEMORY DEVICES AND METHODS FOR FORMING THE SAME

VERTICAL MEMORY DEVICES

MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR IMPROVED...