Wenyu Xu

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nanosheet transistor with enhanced bottom isolation
- Patent number 11,942,557
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport field-effect transistor with gate patterning
- Patent number 11,916,143
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport field-effect transistor with ring-shaped wrap-ar...
- Patent number 11,908,937
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonmetallic liner around a magnetic tunnel junction
- Patent number 11,849,647
- Issue date Dec 19, 2023
- International Business Machines Corporation
- Tao Li
Information Patent Grant
Short gate on active and longer gate on STI for nanosheets
- Patent number 11,843,031
- Issue date Dec 12, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid-channel nano-sheet FETs
- Patent number 11,798,852
- Issue date Oct 24, 2023
- TESSERA LLC
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor with dielectric fin extension
- Patent number 11,764,259
- Issue date Sep 19, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field-effect transistor with reduced subthreshold swing
- Patent number 11,735,658
- Issue date Aug 22, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion break isolation for gate-all-around field-effect t...
- Patent number 11,728,340
- Issue date Aug 15, 2023
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistors with strained channel regions
- Patent number 11,705,517
- Issue date Jul 18, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with ultra low-k spacer and improved patternin...
- Patent number 11,664,422
- Issue date May 30, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high mobility complementary metal-oxide-semicondu...
- Patent number 11,637,041
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor devices with composite high-K and low-K spacers...
- Patent number 11,621,348
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field-effect transistor with reduced subthreshold swing
- Patent number 11,575,042
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor late gate recess process with impr...
- Patent number 11,575,022
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked vertical transport field effect transistors with anchors
- Patent number 11,569,229
- Issue date Jan 31, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor with a reduced gate-to-bottom...
- Patent number 11,515,401
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor with a reduced gate-to-bottom...
- Patent number 11,495,673
- Issue date Nov 8, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VFET device with controllable top spacer
- Patent number 11,430,864
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid-channel nano-sheet FETS
- Patent number 11,276,612
- Issue date Mar 15, 2022
- Tessera, Inc.
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D ReRAM formed by metal-assisted chemical etching with replacement...
- Patent number 11,196,001
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor devices with self-aligned gates
- Patent number 11,183,389
- Issue date Nov 23, 2021
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming III-V on insulator structure on semiconductor sub...
- Patent number 11,164,940
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistors with self aligned source/drain ju...
- Patent number 11,107,905
- Issue date Aug 31, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction formation in thick-oxide and thin-oxide vertical FETs on t...
- Patent number 11,101,181
- Issue date Aug 24, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a pair of vertical fin field effect transistors havi...
- Patent number 11,081,400
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of vertical fin field effect transistors having top air...
- Patent number 11,081,482
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single electron transistor with gap tunnel barriers
- Patent number 11,069,800
- Issue date Jul 20, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer and junction formation for integrating extended-gate a...
- Patent number 11,062,959
- Issue date Jul 13, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flipped vertical field-effect-transistor
- Patent number 11,062,965
- Issue date Jul 13, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HYBRID-CHANNEL NANO-SHEET FETS
- Publication number 20240274475
- Publication date Aug 15, 2024
- Adeia Semiconductor Solutions LLC
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLVENT ANNEALING OF AN ORGANIC PLANARIZATION LAYER
- Publication number 20230197437
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Jing Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT GATE ON ACTIVE AND LONGER GATE ON STI FOR NANOSHEETS
- Publication number 20230154982
- Publication date May 18, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR WITH ANCHORS
- Publication number 20230122234
- Publication date Apr 20, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH GATE PATTERNING
- Publication number 20230101011
- Publication date Mar 30, 2023
- International Business Machines Corporation
- RUILONG XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR WITH DIELECTRIC FIN EXTENSION
- Publication number 20230023157
- Publication date Jan 26, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH RING-SHAPED WRAP-AR...
- Publication number 20230013383
- Publication date Jan 19, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR WITH ULTRA LOW-K SPACER AND IMPROVED PATTERNIN...
- Publication number 20220399439
- Publication date Dec 15, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR WITH ENHANCED BOTTOM ISOLATION
- Publication number 20220352386
- Publication date Nov 3, 2022
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONMETALLIC LINER AROUND A MAGNETIC TUNNEL JUNCTION
- Publication number 20220285606
- Publication date Sep 8, 2022
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID-CHANNEL NANO-SHEET FETS
- Publication number 20220157666
- Publication date May 19, 2022
- Tessera, Inc.
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D ReRAM FORMED BY METAL-ASSISTED CHEMICAL ETCHING WITH REPLACEMENT...
- Publication number 20210159409
- Publication date May 27, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...
- Publication number 20210151583
- Publication date May 20, 2021
- International Business Machines Corporation
- Wenyu XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTORS WITH STRAINED CHANNEL REGIONS
- Publication number 20210151601
- Publication date May 20, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR DEVICES WITH COMPOSITE HIGH-K AND LOW-K SPACERS...
- Publication number 20210119043
- Publication date Apr 22, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION BREAK ISOLATION FOR GATE-ALL-AROUND FIELD-EFFECT T...
- Publication number 20210118878
- Publication date Apr 22, 2021
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH MOBILITY COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICE...
- Publication number 20210111195
- Publication date Apr 15, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR REPLACEMENT METAL GATE FABRICATION
- Publication number 20210013106
- Publication date Jan 14, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY (PCM) WITH GRADUAL RESET CHARACTERISTICS
- Publication number 20200411087
- Publication date Dec 31, 2020
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Application
SINGLE DIFFUSION BREAK ISOLATION FOR GATE-ALL-AROUND FIELD-EFFECT T...
- Publication number 20200381426
- Publication date Dec 3, 2020
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS WITH ANCHORS
- Publication number 20200328206
- Publication date Oct 15, 2020
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...
- Publication number 20200321448
- Publication date Oct 8, 2020
- International Business Machines Corporation
- Wenyu XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POSITIONING AIR-GAP SPACERS IN A TRANSISTOR FOR IMPROVED CONTROL OF...
- Publication number 20200312977
- Publication date Oct 1, 2020
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER HAVING INTEGRATED CIRCUITS WITH BOTTOM LOCAL IN...
- Publication number 20200303244
- Publication date Sep 24, 2020
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED GATES
- Publication number 20200294803
- Publication date Sep 17, 2020
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTORS WITH STRAINED CHANNEL REGIONS
- Publication number 20200251593
- Publication date Aug 6, 2020
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT SACRIFICIAL NANOSHEETS HAVING IMPROVED ETCH SELECTIVITY
- Publication number 20200235206
- Publication date Jul 23, 2020
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING III-V ON INSULATOR STRUCTURE ON SEMICONDUCTOR SUB...
- Publication number 20200176558
- Publication date Jun 4, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLIPPED VERTICAL FIELD-EFFECT-TRANSISTOR
- Publication number 20200176335
- Publication date Jun 4, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VFET Device with Controllable Top Spacer
- Publication number 20200168702
- Publication date May 28, 2020
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Nanosheet transistor with enhanced bottom isolation

Vertical transport field-effect transistor with gate patterning

Vertical transport field-effect transistor with ring-shaped wrap-ar...

Nonmetallic liner around a magnetic tunnel junction

Short gate on active and longer gate on STI for nanosheets

Hybrid-channel nano-sheet FETs

Vertical field-effect transistor with dielectric fin extension

Tunnel field-effect transistor with reduced subthreshold swing

Single diffusion break isolation for gate-all-around field-effect t...

Nanosheet transistors with strained channel regions

Nanosheet transistor with ultra low-k spacer and improved patternin...

Method of forming high mobility complementary metal-oxide-semicondu...

Vertical transistor devices with composite high-K and low-K spacers...

Tunnel field-effect transistor with reduced subthreshold swing

Vertical field-effect transistor late gate recess process with impr...

Stacked vertical transport field effect transistors with anchors

Vertical fin field effect transistor with a reduced gate-to-bottom...

Vertical fin field effect transistor with a reduced gate-to-bottom...

VFET device with controllable top spacer

Hybrid-channel nano-sheet FETS

3D ReRAM formed by metal-assisted chemical etching with replacement...

Fin field effect transistor devices with self-aligned gates

Method of forming III-V on insulator structure on semiconductor sub...

Vertical field effect transistors with self aligned source/drain ju...

Junction formation in thick-oxide and thin-oxide vertical FETs on t...

Fabrication of a pair of vertical fin field effect transistors havi...

Fabrication of vertical fin field effect transistors having top air...

Single electron transistor with gap tunnel barriers

Inner spacer and junction formation for integrating extended-gate a...

Flipped vertical field-effect-transistor

Patents Applicationslast 30 patents

HYBRID-CHANNEL NANO-SHEET FETS

SOLVENT ANNEALING OF AN ORGANIC PLANARIZATION LAYER

SHORT GATE ON ACTIVE AND LONGER GATE ON STI FOR NANOSHEETS

STACKED VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR WITH ANCHORS

VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH GATE PATTERNING

VERTICAL FIELD-EFFECT TRANSISTOR WITH DIELECTRIC FIN EXTENSION

VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH RING-SHAPED WRAP-AR...

NANOSHEET TRANSISTOR WITH ULTRA LOW-K SPACER AND IMPROVED PATTERNIN...

NANOSHEET TRANSISTOR WITH ENHANCED BOTTOM ISOLATION

NONMETALLIC LINER AROUND A MAGNETIC TUNNEL JUNCTION

HYBRID-CHANNEL NANO-SHEET FETS

3D ReRAM FORMED BY METAL-ASSISTED CHEMICAL ETCHING WITH REPLACEMENT...

VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...

NANOSHEET TRANSISTORS WITH STRAINED CHANNEL REGIONS

VERTICAL TRANSISTOR DEVICES WITH COMPOSITE HIGH-K AND LOW-K SPACERS...

SINGLE DIFFUSION BREAK ISOLATION FOR GATE-ALL-AROUND FIELD-EFFECT T...

HIGH MOBILITY COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICE...

VERTICAL FIELD EFFECT TRANSISTOR REPLACEMENT METAL GATE FABRICATION

PHASE CHANGE MEMORY (PCM) WITH GRADUAL RESET CHARACTERISTICS

SINGLE DIFFUSION BREAK ISOLATION FOR GATE-ALL-AROUND FIELD-EFFECT T...

STACKED VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS WITH ANCHORS

VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...

POSITIONING AIR-GAP SPACERS IN A TRANSISTOR FOR IMPROVED CONTROL OF...

SEMICONDUCTOR WAFER HAVING INTEGRATED CIRCUITS WITH BOTTOM LOCAL IN...

FIN FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED GATES

NANOSHEET TRANSISTORS WITH STRAINED CHANNEL REGIONS

REPLACEMENT SACRIFICIAL NANOSHEETS HAVING IMPROVED ETCH SELECTIVITY

METHOD OF FORMING III-V ON INSULATOR STRUCTURE ON SEMICONDUCTOR SUB...

FLIPPED VERTICAL FIELD-EFFECT-TRANSISTOR

VFET Device with Controllable Top Spacer