Wibo Daniel Van Noort

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit with trimming
- Patent number 9,331,086
- Issue date May 3, 2016
- NXP B.V.
- Wibo D. Van Noort
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device for radiation detection
- Patent number 8,729,652
- Issue date May 20, 2014
- Trixell
- Anco Heringa
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device and method of manufacturing such a device
- Patent number 8,373,236
- Issue date Feb 12, 2013
- NXP, B.V.
- Erwin Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacting and filling deep-trench-isolation with tungsten
- Patent number 8,294,203
- Issue date Oct 23, 2012
- NXP B.V.
- Wibo Daniel Van Noort
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductors device and method of manufacturing such a device
- Patent number 8,084,829
- Issue date Dec 27, 2011
- NXP B.V.
- Wibo D. Van Noort
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with low buried resistance and method of manuf...
- Patent number 7,956,399
- Issue date Jun 7, 2011
- NXP B.V.
- Wibo Daniel Van Noort
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Bipolar transistor having a second, base-comprising region consisti...
- Patent number 7,932,156
- Issue date Apr 26, 2011
- NXP B.V.
- Johannes J. T. M. Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods relating to trench-based support structures for semiconduct...
- Patent number 7,923,345
- Issue date Apr 12, 2011
- NXP B.V.
- Jan Sonsky
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Bipolar transistor and method of fabricating the same
- Patent number 7,906,403
- Issue date Mar 15, 2011
- NXP B.V.
- Johannes JTM Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned epitaxially grown bipolar transistor
- Patent number 7,883,954
- Issue date Feb 8, 2011
- NXP B.V.
- Peter Magnee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a bipolar transistor
- Patent number 7,838,374
- Issue date Nov 23, 2010
- NXP B.V.
- Wibo D. Van Noort
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a dual gate FET
- Patent number 7,741,182
- Issue date Jun 22, 2010
- NXP B.V.
- Wibo Daniel Van Noort
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT
- Publication number 20110186919
- Publication date Aug 4, 2011
- NXP B.V.
- Wibo D. Van Noort
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Contacting and Filling Deep-Trench-Isolation with Tungsten
- Publication number 20110147884
- Publication date Jun 23, 2011
- Koninklijke Philips Electronics N.V.
- Wibo Daniel Van Noort
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE
- Publication number 20100237434
- Publication date Sep 23, 2010
- NXP B.V.
- Wibo D. Van Noort
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
METHOD OF FABRICATING A BIPOLAR TRANSISTOR
- Publication number 20100047987
- Publication date Feb 25, 2010
- NXP B.V.
- Johannes Josephus Theodorus Marin Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20090227091
- Publication date Sep 10, 2009
- NXP B.V.
- Jan Sonsky
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Self-Aligned Epitaxially Grown Bipolar Transistor
- Publication number 20090203184
- Publication date Aug 13, 2009
- Koninklijke Philips Electronics N.V.
- Peter Magnee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE
- Publication number 20090174034
- Publication date Jul 9, 2009
- NXP B.V.
- Johannes J., T., M. Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacturing Such a Device
- Publication number 20090166753
- Publication date Jul 2, 2009
- NXP B.V.
- Erwin Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FOR RADIATION DETECTION
- Publication number 20090096046
- Publication date Apr 16, 2009
- Koninklijke Philips Electronics N.V.
- Anco Heringa
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR DEVICE FOR RADIATION DETECTION
- Publication number 20090096052
- Publication date Apr 16, 2009
- Koninklijke Philips Electronics N.V.
- Anco Heringa
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR
- Publication number 20090053872
- Publication date Feb 26, 2009
- NXP B.V.
- Wibo D. Van Noort
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating a Duel-Gate Fet
- Publication number 20080318375
- Publication date Dec 25, 2008
- NXP B.V.
- Wibo Daniel Van Noort
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bicmos Compatible Jfet Device and Method of Manufacturing Same
- Publication number 20080258182
- Publication date Oct 23, 2008
- Koninklijke Philips Electronics N.V.
- Prabhat Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductors Device and Method of Manufacturing Such a Device
- Publication number 20080173974
- Publication date Jul 24, 2008
- Koninklijke Philips Eletronics N.V.
- Wibo D. Van Noort
- H01 - BASIC ELECTRIC ELEMENTS

Wibo Daniel Van Noort

Person

Patents Grantslast 30 patents

Integrated circuit with trimming

Semiconductor device for radiation detection

Semiconductor device and method of manufacturing such a device

Contacting and filling deep-trench-isolation with tungsten

Semiconductors device and method of manufacturing such a device

Semiconductor device with low buried resistance and method of manuf...

Bipolar transistor having a second, base-comprising region consisti...

Methods relating to trench-based support structures for semiconduct...

Bipolar transistor and method of fabricating the same

Self-aligned epitaxially grown bipolar transistor

Method of manufacturing a bipolar transistor

Method of fabricating a dual gate FET

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT

Contacting and Filling Deep-Trench-Isolation with Tungsten

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE

METHOD OF FABRICATING A BIPOLAR TRANSISTOR

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Self-Aligned Epitaxially Grown Bipolar Transistor

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE

Semiconductor Device and Method of Manufacturing Such a Device

SEMICONDUCTOR DEVICE FOR RADIATION DETECTION

SEMICONDUCTOR DEVICE FOR RADIATION DETECTION

METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR

Method of Fabricating a Duel-Gate Fet

Bicmos Compatible Jfet Device and Method of Manufacturing Same

Semiconductors Device and Method of Manufacturing Such a Device