Wilfried von AMMON

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Patents Grantslast 30 patents

Information Patent Grant
Induction heating coil and method for melting granules composed of...
- Patent number 9,084,296
- Issue date Jul 14, 2015
- Siltronic AG
- Ludwig Altmannshofer
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Silicon wafer and method for producing it
- Patent number 9,005,563
- Issue date Apr 14, 2015
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for pulling a single crystal composed of silicon with a sect...
- Patent number 8,906,157
- Issue date Dec 9, 2014
- Siltronic AG
- Thomas Schroeck
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a single crystal composed of silicon by remelt...
- Patent number 8,834,627
- Issue date Sep 16, 2014
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a single crystal of semiconductor material
- Patent number 8,580,033
- Issue date Nov 12, 2013
- Siltronic AG
- Wilfried von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing a single crystal composed of silicon using mol...
- Patent number 8,454,746
- Issue date Jun 4, 2013
- Siltronic AG
- Wilfried von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Epitaxial wafer and production method thereof
- Patent number 8,241,421
- Issue date Aug 14, 2012
- Siltronic AG
- Katsuhiko Nakai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor wafers of silicon and method for their production
- Patent number 8,231,725
- Issue date Jul 31, 2012
- Siltronic AG
- Andreas Sattler
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and apparatus for producing a single crystal of semiconduct...
- Patent number 8,221,550
- Issue date Jul 17, 2012
- Siltronic AG
- Wilfried von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer for semiconductor and manufacturing method thereof
- Patent number 8,197,594
- Issue date Jun 12, 2012
- Siltronic AG
- Katsuhiko Nakai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and device for producing semiconductor wafers of silicon
- Patent number 8,172,941
- Issue date May 8, 2012
- Siltronic AG
- Martin Weber
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor wafers of silicon and method for their production
- Patent number 8,043,427
- Issue date Oct 25, 2011
- Siltronic AG
- Andreas Sattler
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor wafer of single crystalline silicon and process for i...
- Patent number 7,868,325
- Issue date Jan 11, 2011
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and process for the heat treatment of a silicon wafer
- Patent number 7,828,893
- Issue date Nov 9, 2010
- Siltronic AG
- Timo Mueller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process and apparatus for producing a silicon single crystal
- Patent number 7,771,530
- Issue date Aug 10, 2010
- Siltronic AG
- Janis Virbulis
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and device for the production of a silicon single crystal, s...
- Patent number 7,708,830
- Issue date May 4, 2010
- Siltronic AG
- Wilfried Von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process and apparatus for producing a single crystal of semiconduct...
- Patent number 7,655,089
- Issue date Feb 2, 2010
- Siltronic AG
- Wilfried von Ammon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer and process for producing it
- Patent number 7,537,657
- Issue date May 26, 2009
- Siltronic AG
- Christoph Seuring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing p-doped and epitaxially coated semiconductor...
- Patent number 7,470,323
- Issue date Dec 30, 2008
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Film or layer of semiconducting material, and process for producing...
- Patent number 7,417,297
- Issue date Aug 26, 2008
- Siltronic AG
- Brian Murphy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing silicon semiconductor wafers with defined def...
- Patent number 7,387,676
- Issue date Jun 17, 2008
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal, and process for producing it
- Patent number 7,335,256
- Issue date Feb 26, 2008
- Siltronic AG
- Martin Weber
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer and process for producing it
- Patent number 7,235,863
- Issue date Jun 26, 2007
- Siltronic AG
- Christoph Seuring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film or layer made of semi-conductive material and method for produ...
- Patent number 7,052,948
- Issue date May 30, 2006
- Siltronic AG
- Brian Murphy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped semiconductor wafer of float zone pulled semiconductor materi...
- Patent number 7,025,827
- Issue date Apr 11, 2006
- Siltronic AG
- Rolf Knobel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and apparatus for epitaxially coating a semiconductor wafer...
- Patent number 6,887,775
- Issue date May 3, 2005
- Siltronic AG
- Wilfried Von Ammon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer made from silicon and method for producing the...
- Patent number 6,843,848
- Issue date Jan 18, 2005
- Siltronic AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for the heat treatment of a silicon wafer, and silicon wafe...
- Patent number 6,803,331
- Issue date Oct 12, 2004
- Siltronic AG
- Robert Hölzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer with crystal lattice defects, and process for p...
- Patent number 6,395,653
- Issue date May 28, 2002
- Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
- Gunther Obermeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing nitrogen-doped semiconductor wafers
- Patent number 6,350,314
- Issue date Feb 26, 2002
- Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
APPARATUS AND METHOD FOR THE PRODUCTION OF INGOTS
- Publication number 20160194785
- Publication date Jul 7, 2016
- Solar World Industries America Inc.
- Nathan STODDARD
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL
- Publication number 20130192518
- Publication date Aug 1, 2013
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Wafer and Method For Producing It
- Publication number 20120039786
- Publication date Feb 16, 2012
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Wafers Of Silicon and Method For Their Production
- Publication number 20110316128
- Publication date Dec 29, 2011
- Siltronic AG
- Andreas Sattler
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Producing A Single Crystal Composed Of Silicon Using Mol...
- Publication number 20110185963
- Publication date Aug 4, 2011
- Siltronic AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Pulling A Single Crystal Composed Of Silicon With A Sect...
- Publication number 20110126757
- Publication date Jun 2, 2011
- Siltronic AG
- Thomas Schroeck
- C30 - CRYSTAL GROWTH
Information Patent Application
Method For Producing A Single Crystal Composed Of Silicon By Remelt...
- Publication number 20110107960
- Publication date May 12, 2011
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Device For Producing A Single Crystal Composed Of Silicon By Remelt...
- Publication number 20110095018
- Publication date Apr 28, 2011
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Process and Apparatus for Producing a Single Crystal of Semiconduct...
- Publication number 20100158783
- Publication date Jun 24, 2010
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Wafer Of Single Crystalline Silicon and Process For I...
- Publication number 20090224366
- Publication date Sep 10, 2009
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Induction Heating Coil and Method For Melting Granules Composed Of...
- Publication number 20090223949
- Publication date Sep 10, 2009
- Siltronic AG
- Ludwig Altmannshofer
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCT...
- Publication number 20090084669
- Publication date Apr 2, 2009
- Siltronic AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Substrate And Method For Production Thereof
- Publication number 20080268613
- Publication date Oct 30, 2008
- Siltronic AG
- Josef Brunner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING IT
- Publication number 20080210155
- Publication date Sep 4, 2008
- Siltronic AG
- Dirk Dantz
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor wafers of silicon and method for their production
- Publication number 20080187736
- Publication date Aug 7, 2008
- Siltronic AG
- Andreas Sattler
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and device for producing semiconductor wafers of silicon
- Publication number 20080153261
- Publication date Jun 26, 2008
- Siltronic AG
- Martin Weber
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Wafer For Semiconductor And Manufacturing Method Thereof
- Publication number 20080113171
- Publication date May 15, 2008
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Process For Producing P-Doped and Epitaxially Coated Semiconductor...
- Publication number 20080096371
- Publication date Apr 24, 2008
- Siltronic AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon wafer and process for producing it
- Publication number 20060278157
- Publication date Dec 14, 2006
- Siltronic AG
- Christoph Seuring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon single crystal, and process for producing it
- Publication number 20060254498
- Publication date Nov 16, 2006
- Siltronic AG
- Martin Weber
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon wafer and process for the heat treatment of a silicon wafer
- Publication number 20060213424
- Publication date Sep 28, 2006
- Timo Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
Film or layer of semiconducting material, and process for producing...
- Publication number 20060202310
- Publication date Sep 14, 2006
- Siltronic AG
- Brian Murphy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxially coated semiconductor wafer
- Publication number 20050103261
- Publication date May 19, 2005
- Wacker Siltronic AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor wafer with a thin epitaxial silicon layer, and produc...
- Publication number 20040144977
- Publication date Jul 29, 2004
- WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG
- Reinhard Schauer
- C30 - CRYSTAL GROWTH
Information Patent Application
Process and apparatus for producing a single crystal of semiconduct...
- Publication number 20030145781
- Publication date Aug 7, 2003
- Wacker Siltronic AG
- Wilfried Von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal and process for producing it
- Publication number 20030145780
- Publication date Aug 7, 2003
- Wacker Siltronic AG
- Dirk Dantz
- C30 - CRYSTAL GROWTH
Information Patent Application
Process and apparatus for producing a silicon single crystal
- Publication number 20020092461
- Publication date Jul 18, 2002
- Janis Virbulis
- C30 - CRYSTAL GROWTH

Wilfried von AMMON

Person

Patents Grantslast 30 patents

Induction heating coil and method for melting granules composed of...

Silicon wafer and method for producing it

Method for pulling a single crystal composed of silicon with a sect...

Method for producing a single crystal composed of silicon by remelt...

Method for producing a single crystal of semiconductor material

Method for producing a single crystal composed of silicon using mol...

Epitaxial wafer and production method thereof

Semiconductor wafers of silicon and method for their production

Process and apparatus for producing a single crystal of semiconduct...

Silicon wafer for semiconductor and manufacturing method thereof

Method and device for producing semiconductor wafers of silicon

Semiconductor wafers of silicon and method for their production

Semiconductor wafer of single crystalline silicon and process for i...

Silicon wafer and process for the heat treatment of a silicon wafer

Process and apparatus for producing a silicon single crystal

Method and device for the production of a silicon single crystal, s...

Process and apparatus for producing a single crystal of semiconduct...

Silicon wafer and process for producing it

Process for producing p-doped and epitaxially coated semiconductor...

Film or layer of semiconducting material, and process for producing...

Process for producing silicon semiconductor wafers with defined def...

Silicon single crystal, and process for producing it

Silicon wafer and process for producing it

Film or layer made of semi-conductive material and method for produ...

Doped semiconductor wafer of float zone pulled semiconductor materi...

Process and apparatus for epitaxially coating a semiconductor wafer...

Semiconductor wafer made from silicon and method for producing the...

Process for the heat treatment of a silicon wafer, and silicon wafe...

Semiconductor wafer with crystal lattice defects, and process for p...

Process for producing nitrogen-doped semiconductor wafers

Patents Applicationslast 30 patents

APPARATUS AND METHOD FOR THE PRODUCTION OF INGOTS

METHOD FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL

Silicon Wafer and Method For Producing It

Semiconductor Wafers Of Silicon and Method For Their Production

Method For Producing A Single Crystal Composed Of Silicon Using Mol...

Method For Pulling A Single Crystal Composed Of Silicon With A Sect...

Method For Producing A Single Crystal Composed Of Silicon By Remelt...

Device For Producing A Single Crystal Composed Of Silicon By Remelt...

Process and Apparatus for Producing a Single Crystal of Semiconduct...

Semiconductor Wafer Of Single Crystalline Silicon and Process For I...

Induction Heating Coil and Method For Melting Granules Composed Of...

PROCESS AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCT...

Semiconductor Substrate And Method For Production Thereof

SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING IT

Semiconductor wafers of silicon and method for their production

Method and device for producing semiconductor wafers of silicon

Silicon Wafer For Semiconductor And Manufacturing Method Thereof

Process For Producing P-Doped and Epitaxially Coated Semiconductor...

Silicon wafer and process for producing it

Silicon single crystal, and process for producing it

Silicon wafer and process for the heat treatment of a silicon wafer

Film or layer of semiconducting material, and process for producing...

Epitaxially coated semiconductor wafer

Semiconductor wafer with a thin epitaxial silicon layer, and produc...

Process and apparatus for producing a single crystal of semiconduct...

Silicon single crystal and process for producing it

Process and apparatus for producing a silicon single crystal