William E. Hoke

Person

Wayland, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Group III-nitride structure having successively reduced crystallogr...
- Patent number 10,622,447
- Issue date Apr 14, 2020
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped barrier layers in epitaxial group III nitrides
- Patent number 9,419,125
- Issue date Aug 16, 2016
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with layers having different hydrogen contents
- Patent number 9,293,379
- Issue date Mar 22, 2016
- Raytheon Company
- Eduardo M. Chumbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having silicon devices, column III-nitride...
- Patent number 8,823,146
- Issue date Sep 2, 2014
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride devices having low ohmic contact resistance
- Patent number 8,772,786
- Issue date Jul 8, 2014
- Raytheon Company
- Kamal Tabatabaie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride for liquid crystal electrodes
- Patent number 8,698,200
- Issue date Apr 15, 2014
- Raytheon Company
- Daniel P. Resler
- G02 - OPTICS
Information Patent Grant
Method and structure having monolithic heterogeneous integration of...
- Patent number 8,575,666
- Issue date Nov 5, 2013
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride for liquid crystal electrodes
- Patent number 8,268,707
- Issue date Sep 18, 2012
- Raytheon Company
- Daniel P. Resler
- G02 - OPTICS
Information Patent Grant
Structure having silicon CMOS transistors with column III-V transis...
- Patent number 8,212,294
- Issue date Jul 3, 2012
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boron aluminum nitride diamond heterostructure
- Patent number 7,968,865
- Issue date Jun 28, 2011
- Raytheon Company
- Jeffrey R. LaRoche
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Method for continuous, in situ evaluation of entire wafers for macr...
- Patent number 7,776,152
- Issue date Aug 17, 2010
- Raytheon Company
- William E. Hoke
- G01 - MEASURING TESTING
Information Patent Grant
Boron aluminum nitride diamond heterostructure
- Patent number 7,557,378
- Issue date Jul 7, 2009
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride high electron mobility transistor structure
- Patent number 7,226,850
- Issue date Jun 5, 2007
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-channel high electron mobility transistor (HEMT) device
- Patent number 6,835,969
- Issue date Dec 28, 2004
- Raytheon Company
- Philbert F. Marsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quaternary-ternary semiconductor devices
- Patent number 6,818,928
- Issue date Nov 16, 2004
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double recessed transistor
- Patent number 6,797,994
- Issue date Sep 28, 2004
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double recessed transistor
- Patent number 6,620,662
- Issue date Sep 16, 2003
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode formation in double-recessed transistor by two-step...
- Patent number 6,573,129
- Issue date Jun 3, 2003
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 6,489,639
- Issue date Dec 3, 2002
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer wafer fabrication
- Patent number 6,368,983
- Issue date Apr 9, 2002
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double recessed transistor with resistive layer
- Patent number 6,271,547
- Issue date Aug 7, 2001
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors on spinel substrates
- Patent number 5,448,084
- Issue date Sep 5, 1995
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reactor vessel for the growth of heterojunction devices
- Patent number 5,077,875
- Issue date Jan 7, 1992
- Raytheon Company
- William E. Hoke
- C30 - CRYSTAL GROWTH
Information Patent Grant
Pseudomorphic HEMT having strained compensation layer
- Patent number 5,060,030
- Issue date Oct 22, 1991
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photo-enhanced pyrolytic MOCVD growth of group II-VI materials
- Patent number 4,904,337
- Issue date Feb 27, 1990
- Raytheon Company
- James Elliott
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low temperature metalorganic chemical vapor depostion growth of gro...
- Patent number 4,886,683
- Issue date Dec 12, 1989
- Raytheon Company
- William E. Hoke
- C30 - CRYSTAL GROWTH
Information Patent Grant
Metalorganic chemical vapor deposition growth of Group II-IV semico...
- Patent number 4,804,638
- Issue date Feb 14, 1989
- Raytheon Company
- William E. Hoke
- C30 - CRYSTAL GROWTH
Information Patent Grant
Metalorganic vapor phase epitaxial growth of group II-VI semiconduc...
- Patent number 4,568,397
- Issue date Feb 4, 1986
- Raytheon Company
- William E. Hoke
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GROUP III - NITRIDE STRUCTURE HAVING SUCCESSIVELY REDUCED CRYSTALLO...
- Publication number 20180286954
- Publication date Oct 4, 2018
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING GROWTH OF NON-UNIFORMITIES AND AUTODOPING DURIN...
- Publication number 20150059640
- Publication date Mar 5, 2015
- Raytheon Company
- Jeffrey R. LaRoche
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING SILICON DEVICES, COLUMN III-NITRIDE...
- Publication number 20140231870
- Publication date Aug 21, 2014
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLARIZATION EFFECT CARRIER GENERATING DEVICE STRUCTURES HAVING COM...
- Publication number 20140183545
- Publication date Jul 3, 2014
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DEVICES HAVING LOW OHMIC CONTACT RESISTANCE
- Publication number 20140014966
- Publication date Jan 16, 2014
- Raytheon Company
- Kamal Tabatabaie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES HAVING NUCLEATION LAYER TO PREVENT INTERFA...
- Publication number 20130161699
- Publication date Jun 27, 2013
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE HAVING MONOLITHIC HETEROGENEOUS INTEGRATION OF...
- Publication number 20130082281
- Publication date Apr 4, 2013
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICALLY TRANSPARENT CONDUCTORS
- Publication number 20120300168
- Publication date Nov 29, 2012
- Raytheon Company
- William E. Hoke
- G02 - OPTICS
Information Patent Application
Gallium Nitride for Liquid Crystal Electrodes
- Publication number 20120299012
- Publication date Nov 29, 2012
- Raytheon Company
- Daniel P. Resler
- G02 - OPTICS
Information Patent Application
SEMICONDUCTOR STRUCTURES HAVING NUCLEATION LAYER TO PREVENT INTERFA...
- Publication number 20120261721
- Publication date Oct 18, 2012
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE HAVING SILICON CMOS TRANSISTORS WITH COLUMN III-V TRANSIS...
- Publication number 20110180857
- Publication date Jul 28, 2011
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD
- Publication number 20110049581
- Publication date Mar 3, 2011
- Raytheon Company
- Eduardo M. Chumbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE FOR LIQUID CRYSTAL ELECTRODES
- Publication number 20100320474
- Publication date Dec 23, 2010
- Raytheon Company
- Daniel P. Resler
- G02 - OPTICS
Information Patent Application
BORON ALUMINUM NITRIDE DIAMOND HETEROSTRUCTURE
- Publication number 20100090228
- Publication date Apr 15, 2010
- Jeffrey R. LaRoche
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING PLURAL BACK-BARRIER LAYERS FOR IMPRO...
- Publication number 20080258135
- Publication date Oct 23, 2008
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BORON ALUMINUM NITRIDE DIAMOND HETEROSTRUCTURE
- Publication number 20080121897
- Publication date May 29, 2008
- Jeffrey R. LaRoche
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
METHOD FOR CONTINUOUS, IN SITU EVALUATION OF ENTIRE WAFERS FOR MACR...
- Publication number 20080098953
- Publication date May 1, 2008
- William E. Hoke
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE
- Publication number 20070164313
- Publication date Jul 19, 2007
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain compensated high electron mobility transistor
- Publication number 20070052048
- Publication date Mar 8, 2007
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride high electron mobility transistor structure
- Publication number 20060261370
- Publication date Nov 23, 2006
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-CHANNEL HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE
- Publication number 20040262632
- Publication date Dec 30, 2004
- Philbert F. Marsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Quaternary-ternary semiconductor devices
- Publication number 20040108574
- Publication date Jun 10, 2004
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double recessed transistor
- Publication number 20030207508
- Publication date Nov 6, 2003
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double recessed transistor
- Publication number 20010029073
- Publication date Oct 11, 2001
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double recessed transistor
- Publication number 20010023133
- Publication date Sep 20, 2001
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS

William E. Hoke

Person

Patents Grantslast 30 patents

Group III-nitride structure having successively reduced crystallogr...

Doped barrier layers in epitaxial group III nitrides

Semiconductor structure with layers having different hydrogen contents

Semiconductor structure having silicon devices, column III-nitride...

Gallium nitride devices having low ohmic contact resistance

Gallium nitride for liquid crystal electrodes

Method and structure having monolithic heterogeneous integration of...

Gallium nitride for liquid crystal electrodes

Structure having silicon CMOS transistors with column III-V transis...

Boron aluminum nitride diamond heterostructure

Method for continuous, in situ evaluation of entire wafers for macr...

Boron aluminum nitride diamond heterostructure

Gallium nitride high electron mobility transistor structure

Split-channel high electron mobility transistor (HEMT) device

Quaternary-ternary semiconductor devices

Double recessed transistor

Double recessed transistor

Gate electrode formation in double-recessed transistor by two-step...

High electron mobility transistor

Multi-layer wafer fabrication

Double recessed transistor with resistive layer

Field effect transistors on spinel substrates

Reactor vessel for the growth of heterojunction devices

Pseudomorphic HEMT having strained compensation layer

Photo-enhanced pyrolytic MOCVD growth of group II-VI materials

Low temperature metalorganic chemical vapor depostion growth of gro...

Metalorganic chemical vapor deposition growth of Group II-IV semico...

Metalorganic vapor phase epitaxial growth of group II-VI semiconduc...

Patents Applicationslast 30 patents

GROUP III - NITRIDE STRUCTURE HAVING SUCCESSIVELY REDUCED CRYSTALLO...

METHOD FOR REDUCING GROWTH OF NON-UNIFORMITIES AND AUTODOPING DURIN...

SEMICONDUCTOR STRUCTURE HAVING SILICON DEVICES, COLUMN III-NITRIDE...

POLARIZATION EFFECT CARRIER GENERATING DEVICE STRUCTURES HAVING COM...

GALLIUM NITRIDE DEVICES HAVING LOW OHMIC CONTACT RESISTANCE

SEMICONDUCTOR STRUCTURES HAVING NUCLEATION LAYER TO PREVENT INTERFA...

METHOD AND STRUCTURE HAVING MONOLITHIC HETEROGENEOUS INTEGRATION OF...

OPTICALLY TRANSPARENT CONDUCTORS

Gallium Nitride for Liquid Crystal Electrodes

SEMICONDUCTOR STRUCTURES HAVING NUCLEATION LAYER TO PREVENT INTERFA...

STRUCTURE HAVING SILICON CMOS TRANSISTORS WITH COLUMN III-V TRANSIS...

SEMICONDUCTOR STRUCTURE AND METHOD

GALLIUM NITRIDE FOR LIQUID CRYSTAL ELECTRODES

BORON ALUMINUM NITRIDE DIAMOND HETEROSTRUCTURE

SEMICONDUCTOR STRUCTURE HAVING PLURAL BACK-BARRIER LAYERS FOR IMPRO...

BORON ALUMINUM NITRIDE DIAMOND HETEROSTRUCTURE

METHOD FOR CONTINUOUS, IN SITU EVALUATION OF ENTIRE WAFERS FOR MACR...

GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE

Strain compensated high electron mobility transistor

Gallium nitride high electron mobility transistor structure

SPLIT-CHANNEL HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE

Quaternary-ternary semiconductor devices

Double recessed transistor

Double recessed transistor

Double recessed transistor