Wipawan Yindeepol

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trim zener using double poly process
- Patent number 6,979,879
- Issue date Dec 27, 2005
- National Semiconductor Corporation
- Wipawan Yindeepol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elimination of walkout in high voltage trench isolated devices
- Patent number 6,362,064
- Issue date Mar 26, 2002
- National Semiconductor Corporation
- Joel M. McGregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device trench isolation structure with polysilicon bi...
- Patent number 6,121,148
- Issue date Sep 19, 2000
- National Semiconductor Corporation
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device trench isolation structure with polysilicon bi...
- Patent number 5,914,523
- Issue date Jun 22, 1999
- National Semiconductor Corp.
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit including filling and plana...
- Patent number 5,911,109
- Issue date Jun 8, 1999
- National Semiconductor Corporation
- Reda R. Razouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming and planarizing deep isolation trenches in a sili...
- Patent number 5,811,315
- Issue date Sep 22, 1998
- National Semiconductor Corporation
- Wipawan Yindeepol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with trenches and an oxygen barrier layer
- Patent number 5,581,110
- Issue date Dec 3, 1996
- National Semiconductor Corporation
- Reda R. Razouk
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELIMINATION OF WALKOUT IN HIGH VOLTAGE TRENCH ISOLATED DEVICES
- Publication number 20010023974
- Publication date Sep 27, 2001
- JOEL M. MCGREGOR
- H01 - BASIC ELECTRIC ELEMENTS

Wipawan Yindeepol

Person

Patents Grantslast 30 patents

Trim zener using double poly process

Elimination of walkout in high voltage trench isolated devices

Semiconductor device trench isolation structure with polysilicon bi...

Semiconductor device trench isolation structure with polysilicon bi...

Method of forming an integrated circuit including filling and plana...

Method of forming and planarizing deep isolation trenches in a sili...

Integrated circuit with trenches and an oxygen barrier layer

Patents Applicationslast 30 patents

ELIMINATION OF WALKOUT IN HIGH VOLTAGE TRENCH ISOLATED DEVICES