Wolfgang Roesner

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including an anode contact region having a var...
- Patent number 11,444,158
- Issue date Sep 13, 2022
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse-conducting igbt having a reduced forward recovery voltage
- Patent number 11,296,213
- Issue date Apr 5, 2022
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor having first and second field sto...
- Patent number 11,004,963
- Issue date May 11, 2021
- Infineon Technologies AG
- Oana Julia Spulber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a power semiconductor device
- Patent number 10,103,227
- Issue date Oct 16, 2018
- Infineon Technologies Austria AG
- Holger Huesken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic switching element and integrated sensor
- Patent number 9,768,766
- Issue date Sep 19, 2017
- Infineon Technologies Austria AG
- Stefan Willkofer
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor switching device including charge storage structure
- Patent number 9,543,398
- Issue date Jan 10, 2017
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor diode, IGBT, and method for manufacturing thereof
- Patent number 8,809,902
- Issue date Aug 19, 2014
- Infineon Technologies Austria AG
- Holger Huesken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure for semiconductor devices
- Patent number 8,138,538
- Issue date Mar 20, 2012
- Qimonda AG
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including a vertical transistor and method
- Patent number 7,838,925
- Issue date Nov 23, 2010
- Qimonda AG
- Wolfgang Roesner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including a gate electrode
- Patent number 7,829,892
- Issue date Nov 9, 2010
- Qimonda AG
- Richard Johannes Luyken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a Fin structure
- Patent number 7,700,427
- Issue date Apr 20, 2010
- Qimonda AG
- Michael Specht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a substrate
- Patent number 7,611,928
- Issue date Nov 3, 2009
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory component with body region of memory cell havi...
- Patent number 7,598,543
- Issue date Oct 6, 2009
- Qimonda AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit arrangement with low-resistance contacts and met...
- Patent number 7,560,351
- Issue date Jul 14, 2009
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory with charge-trapping stack arrangement
- Patent number 7,528,425
- Issue date May 5, 2009
- Infineon Technologies AG
- Michael Specht
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for producing a layer arrangement, and layer arrangement fo...
- Patent number 7,312,126
- Issue date Dec 25, 2007
- Infineon Technologies AG
- Gurkan Ilicali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-trapping memory cell and method for production
- Patent number 7,298,004
- Issue date Nov 20, 2007
- Infineon Technologies AG
- Michael Specht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin Field-effect transistor and method for producing a fin field ef...
- Patent number 7,265,424
- Issue date Sep 4, 2007
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density NROM-FINFET
- Patent number 7,208,794
- Issue date Apr 24, 2007
- Infineon Technologies AG
- Franz Hofmann
- G11 - INFORMATION STORAGE
Information Patent Grant
DRAM cell structure with tunnel barrier
- Patent number 7,180,115
- Issue date Feb 20, 2007
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with vertical transistors
- Patent number 6,750,095
- Issue date Jun 15, 2004
- Infineon Technologies AG
- Emmerich Bertagnoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor, circuit configuration and method of fabric...
- Patent number 6,740,910
- Issue date May 25, 2004
- Infineon Technologies AG
- Wolfgang Roesner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the production of a DRAM cell configuration
- Patent number 6,420,228
- Issue date Jul 16, 2002
- Infineon Technologies AG
- Wolfgang Roesner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming DRAM cell arrangement
- Patent number 6,352,894
- Issue date Mar 5, 2002
- Siemens Aktiengesellschaft
- Bernd Goebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit configuration having single-electron components, a method f...
- Patent number 6,307,422
- Issue date Oct 23, 2001
- Infineon Technologies AG
- Wolfgang Roesner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for manufacturing an integrated circuit arrangement having a...
- Patent number 6,274,431
- Issue date Aug 14, 2001
- Siemens Aktiengesellschaft
- Lothar Risch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM cell configuration and method for its production
- Patent number 6,255,684
- Issue date Jul 3, 2001
- Infineon Technologies AG
- Wolfgang Roesner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for DRAM cell arrangement and method for its production
- Patent number 6,184,045
- Issue date Feb 6, 2001
- Siemens Aktiengesellschaft
- Franz Hofman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a memory cell configuration
- Patent number 6,180,458
- Issue date Jan 30, 2001
- Infineon Technologies AG
- Wolfgang Krautschneider
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM cell arrangement and method for its production
- Patent number 6,147,376
- Issue date Nov 14, 2000
- Siemens Aktiengesellschaft
- Franz Hofman
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device Including Insulated Gate Bipolar Transistor
- Publication number 20220376048
- Publication date Nov 24, 2022
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse-Conducting IGBT Having a Reduced Forward Recovery Voltage
- Publication number 20210296474
- Publication date Sep 23, 2021
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20210175329
- Publication date Jun 10, 2021
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor Having First and Second Field Sto...
- Publication number 20190165151
- Publication date May 30, 2019
- Oana Julia Spulber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a Power Semiconductor Device
- Publication number 20170338306
- Publication date Nov 23, 2017
- Infineon Technologies Austria AG
- Holger Huesken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCHING DEVICE INCLUDING CHARGE STORAGE STRUCTURE
- Publication number 20160056251
- Publication date Feb 25, 2016
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC SWITCHING ELEMENT AND INTEGRATED SENSOR
- Publication number 20160013639
- Publication date Jan 14, 2016
- Infineon Technologies Austria AG
- Stefan Willkofer
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Semiconductor Device with a Field Ring Edge Termination Structure a...
- Publication number 20150318347
- Publication date Nov 5, 2015
- INFINEON TECHNOLOGIES AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Having an Emitter Region with First and Second Doping Regions
- Publication number 20150008477
- Publication date Jan 8, 2015
- Infineon Technologies Austria AG
- Holger Huesken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DIODE, IGBT, AND METHOD FOR MANUFACTURING...
- Publication number 20130092977
- Publication date Apr 18, 2013
- INFINEON TECHNOLOGIES AG
- Holger Huesken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20100090264
- Publication date Apr 15, 2010
- QIMONDA AG
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING A VERTICAL TRANSISTOR AND METHOD
- Publication number 20100013005
- Publication date Jan 21, 2010
- QIMONDA AG
- Wolfgang Roesner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Having a Fin Structure
- Publication number 20080308856
- Publication date Dec 18, 2008
- Michael Specht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor and Method for Fabricating a Fin Field-...
- Publication number 20080035997
- Publication date Feb 14, 2008
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory, the fabrication thereof and a method for oper...
- Publication number 20070023808
- Publication date Feb 1, 2007
- Michael Specht
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor memory component
- Publication number 20060267082
- Publication date Nov 30, 2006
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit arrangement with low-resistance contacts and met...
- Publication number 20060175666
- Publication date Aug 10, 2006
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge-trapping memory cell and method for production
- Publication number 20060115978
- Publication date Jun 1, 2006
- Michael Specht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Layer arrangement and process for producing a layer arrangement
- Publication number 20060035442
- Publication date Feb 16, 2006
- Infineon Technologies AG
- Gurkan Ilicali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing a layer arrangement, and layer arrangement fo...
- Publication number 20060027881
- Publication date Feb 9, 2006
- Infineon Technologies AG
- Gurkan Ilicali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar dual-gate transistor and method for fabricating a planar dua...
- Publication number 20060022275
- Publication date Feb 2, 2006
- Infineon Technologies AG
- Gurkan llicali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cell, memory cell arrangement, patterning arrangement, and m...
- Publication number 20050276093
- Publication date Dec 15, 2005
- Infineon Technologies AG
- Andrew Graham
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated circuit array
- Publication number 20050224888
- Publication date Oct 13, 2005
- Infineon Technologies AG
- Andrew Graham
- G11 - INFORMATION STORAGE
Information Patent Application
High-density NROM-FINFET
- Publication number 20050186738
- Publication date Aug 25, 2005
- Infineon Technologies AG
- Franz Hofmann
- G11 - INFORMATION STORAGE
Information Patent Application
Substrate and method for producing a substrate
- Publication number 20050110088
- Publication date May 26, 2005
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical impedance sensor arrangement and method for producing a ve...
- Publication number 20050100938
- Publication date May 12, 2005
- Infineon Technologies AG
- Franz Hofmann
- G01 - MEASURING TESTING
Information Patent Application
Fin field-effect transistor and method for producing a fin field ef...
- Publication number 20040217408
- Publication date Nov 4, 2004
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-effect transistor, circuit configuration and method of fabric...
- Publication number 20030132461
- Publication date Jul 17, 2003
- Wolfgang Roesner
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for producing a vertical MOS transistor
- Publication number 20010024858
- Publication date Sep 27, 2001
- Infineon Technologies AG
- Thomas Schulz
- H01 - BASIC ELECTRIC ELEMENTS

Wolfgang Roesner

Person

Patents Grantslast 30 patents

Semiconductor device including an anode contact region having a var...

Reverse-conducting igbt having a reduced forward recovery voltage

Insulated gate bipolar transistor having first and second field sto...

Method for manufacturing a power semiconductor device

Electronic switching element and integrated sensor

Semiconductor switching device including charge storage structure

Power semiconductor diode, IGBT, and method for manufacturing thereof

Interconnect structure for semiconductor devices

Integrated circuit including a vertical transistor and method

Integrated circuit including a gate electrode

Integrated circuit having a Fin structure

Method for producing a substrate

Semiconductor memory component with body region of memory cell havi...

Integrated circuit arrangement with low-resistance contacts and met...

Semiconductor memory with charge-trapping stack arrangement

Process for producing a layer arrangement, and layer arrangement fo...

Charge-trapping memory cell and method for production

Fin Field-effect transistor and method for producing a fin field ef...

High-density NROM-FINFET

DRAM cell structure with tunnel barrier

Integrated circuit with vertical transistors

Field-effect transistor, circuit configuration and method of fabric...

Method for the production of a DRAM cell configuration

Method of forming DRAM cell arrangement

Circuit configuration having single-electron components, a method f...

Method for manufacturing an integrated circuit arrangement having a...

DRAM cell configuration and method for its production

Method for DRAM cell arrangement and method for its production

Method of producing a memory cell configuration

DRAM cell arrangement and method for its production

Patents Applicationslast 30 patents

Semiconductor Device Including Insulated Gate Bipolar Transistor

Reverse-Conducting IGBT Having a Reduced Forward Recovery Voltage

SEMICONDUCTOR DEVICE INCLUDING INSULATED GATE BIPOLAR TRANSISTOR

Insulated Gate Bipolar Transistor Having First and Second Field Sto...

Method for Manufacturing a Power Semiconductor Device

SEMICONDUCTOR SWITCHING DEVICE INCLUDING CHARGE STORAGE STRUCTURE

ELECTRONIC SWITCHING ELEMENT AND INTEGRATED SENSOR

Semiconductor Device with a Field Ring Edge Termination Structure a...

IGBT Having an Emitter Region with First and Second Doping Regions

POWER SEMICONDUCTOR DIODE, IGBT, AND METHOD FOR MANUFACTURING...

INTERCONNECT STRUCTURE FOR SEMICONDUCTOR DEVICES

INTEGRATED CIRCUIT INCLUDING A VERTICAL TRANSISTOR AND METHOD

Integrated Circuit Having a Fin Structure

Fin Field-Effect Transistor and Method for Fabricating a Fin Field-...

Semiconductor memory, the fabrication thereof and a method for oper...

Semiconductor memory component

Integrated circuit arrangement with low-resistance contacts and met...

Charge-trapping memory cell and method for production

Layer arrangement and process for producing a layer arrangement

Process for producing a layer arrangement, and layer arrangement fo...

Planar dual-gate transistor and method for fabricating a planar dua...

Memory cell, memory cell arrangement, patterning arrangement, and m...

Integrated circuit array

High-density NROM-FINFET

Substrate and method for producing a substrate

Vertical impedance sensor arrangement and method for producing a ve...

Fin field-effect transistor and method for producing a fin field ef...

Field-effect transistor, circuit configuration and method of fabric...

Method for producing a vertical MOS transistor