Xi Lin

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Field-effect-transistors
- Patent number 11,227,919
- Issue date Jan 18, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-heating effect apparatus and test method
- Patent number 11,137,440
- Issue date Oct 5, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xi Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dynamic random access memory
- Patent number 10,741,563
- Issue date Aug 11, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory and fabrication method thereof
- Patent number 10,685,962
- Issue date Jun 16, 2020
- Semiconductor Manufacrturing International (Shanghai) Corporation
- Xi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory and fabrication method thereof
- Patent number 10,475,798
- Issue date Nov 12, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect-transistors and fabrication methods thereof
- Patent number 10,211,203
- Issue date Feb 19, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOS transistor and manufacturing method therefor
- Patent number 9,698,248
- Issue date Jul 4, 2017
- SU ZHOU ORIENTAL SEMICONDUCTOR CO., LTD
- Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor (MOS) transistor structure integrated wit...
- Patent number 9,431,506
- Issue date Aug 30, 2016
- Fudan University
- Xi Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunnel transistor structure integrated with a resistance random acc...
- Patent number 9,147,835
- Issue date Sep 29, 2015
- Fudan University
- Xi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photo detector consisting of tunneling field-effect transistors and...
- Patent number 9,087,958
- Issue date Jul 21, 2015
- Fudan University
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-semiconductor (MOS) transistor structure integrated wit...
- Patent number 9,054,303
- Issue date Jun 9, 2015
- Fudan University
- Xi Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Photo detector consisting of tunneling field-effect transistors and...
- Patent number 8,969,911
- Issue date Mar 3, 2015
- Fudan Univeristy
- Pengfei Wang
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for manufacturing a tunneling field effect transistor with a...
- Patent number 8,748,267
- Issue date Jun 10, 2014
- Fudan University
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing vertical-channel tunneling transistor
- Patent number 8,586,432
- Issue date Nov 19, 2013
- Fudan University
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor substrate of large-power device
- Patent number 8,557,678
- Issue date Oct 15, 2013
- Fudan University
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DYNAMIC RANDOM ACCESS MEMORY
- Publication number 20200020696
- Publication date Jan 16, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xi LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT-TRANSISTORS
- Publication number 20190140057
- Publication date May 9, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xi LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-HEATING EFFECT APPARATUS AND TEST METHOD
- Publication number 20180180664
- Publication date Jun 28, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xi LIN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DYNAMIC RANDOM ACCESS MEMORY AND FABRICATION METHOD THEREOF
- Publication number 20180138183
- Publication date May 17, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xi LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC RANDOM ACCESS MEMORY AND FABRICATION METHOD THEREOF
- Publication number 20180138184
- Publication date May 17, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xi LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT-TRANSISTORS AND FABRICATION METHODS THEREOF
- Publication number 20170358577
- Publication date Dec 14, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xi LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOS TRANSISTOR AND MANUFACTURING METHOD THEREFOR
- Publication number 20160276464
- Publication date Sep 22, 2016
- SU ZHOU ORIENTAL SEMICONDUCTOR CO.,LTD
- Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE-SEMICONDUCTOR (MOS) TRANSISTOR STRUCTURE INTEGRATED WIT...
- Publication number 20150311306
- Publication date Oct 29, 2015
- Fudan University
- Xi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTO DETECTOR CONSISTING OF TUNNELING FIELD-EFFECT TRANSISTORS AND...
- Publication number 20150132883
- Publication date May 14, 2015
- Fudan University
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED VERTICAL NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- Publication number 20140167134
- Publication date Jun 19, 2014
- Fudan University
- Pengfei Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE AND ITS MANUFACTURING METHOD THEREOF
- Publication number 20140034891
- Publication date Feb 6, 2014
- Fudan University
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE-SEMICONDUCTOR (MOS) TRANSISTOR STRUCTURE INTEGRATED WIT...
- Publication number 20130341696
- Publication date Dec 26, 2013
- Fudan University
- Xi Lin
- G11 - INFORMATION STORAGE
Information Patent Application
TUNNEL TRANSISTOR STRUCTURE INTEGRATED WITH A RESISTANCE RANDOM ACC...
- Publication number 20130341697
- Publication date Dec 26, 2013
- Fudan University
- Xi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A GATE-CONTROL DIODE SEMICONDUCTOR DEVICE
- Publication number 20130237009
- Publication date Sep 12, 2013
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A GATE-CONTROL DIODE SEMICONDUCTOR MEMORY...
- Publication number 20130237010
- Publication date Sep 12, 2013
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Brightness-adjustable Light-emitting Device and Array and the Manuf...
- Publication number 20130162959
- Publication date Jun 27, 2013
- Fudan University
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A TUNNELING FIELD EFFECT TRANSISTOR WITH A...
- Publication number 20130149824
- Publication date Jun 13, 2013
- Fudan University
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING VERTICAL-CHANNEL TUNNELING TRANSISTOR
- Publication number 20130149848
- Publication date Jun 13, 2013
- Fudan University
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Semiconductor Substrate of Large-power Device
- Publication number 20130065365
- Publication date Mar 14, 2013
- Fudan University
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTO DETECTOR CONSISTING OF TUNNELING FIELD-EFFECT TRANSISTORS AND...
- Publication number 20120261669
- Publication date Oct 18, 2012
- Fudan University
- Pengfei Wang
- G02 - OPTICS

Person

Patents Grantslast 30 patents

Field-effect-transistors

Self-heating effect apparatus and test method

Dynamic random access memory

Dynamic random access memory and fabrication method thereof

Dynamic random access memory and fabrication method thereof

Field-effect-transistors and fabrication methods thereof

Power MOS transistor and manufacturing method therefor

Metal-oxide-semiconductor (MOS) transistor structure integrated wit...

Tunnel transistor structure integrated with a resistance random acc...

Photo detector consisting of tunneling field-effect transistors and...

Metal-oxide-semiconductor (MOS) transistor structure integrated wit...

Photo detector consisting of tunneling field-effect transistors and...

Method for manufacturing a tunneling field effect transistor with a...

Method for manufacturing vertical-channel tunneling transistor

Method for manufacturing semiconductor substrate of large-power device

Patents Applicationslast 30 patents

DYNAMIC RANDOM ACCESS MEMORY

FIELD-EFFECT-TRANSISTORS

SELF-HEATING EFFECT APPARATUS AND TEST METHOD

DYNAMIC RANDOM ACCESS MEMORY AND FABRICATION METHOD THEREOF

DYNAMIC RANDOM ACCESS MEMORY AND FABRICATION METHOD THEREOF

FIELD-EFFECT-TRANSISTORS AND FABRICATION METHODS THEREOF

POWER MOS TRANSISTOR AND MANUFACTURING METHOD THEREFOR

METAL-OXIDE-SEMICONDUCTOR (MOS) TRANSISTOR STRUCTURE INTEGRATED WIT...

PHOTO DETECTOR CONSISTING OF TUNNELING FIELD-EFFECT TRANSISTORS AND...

SELF-ALIGNED VERTICAL NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY STRUCTURE AND ITS MANUFACTURING METHOD THEREOF

METAL-OXIDE-SEMICONDUCTOR (MOS) TRANSISTOR STRUCTURE INTEGRATED WIT...

TUNNEL TRANSISTOR STRUCTURE INTEGRATED WITH A RESISTANCE RANDOM ACC...

METHOD FOR MANUFACTURING A GATE-CONTROL DIODE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING A GATE-CONTROL DIODE SEMICONDUCTOR MEMORY...

Brightness-adjustable Light-emitting Device and Array and the Manuf...

METHOD FOR MANUFACTURING A TUNNELING FIELD EFFECT TRANSISTOR WITH A...

METHOD FOR MANUFACTURING VERTICAL-CHANNEL TUNNELING TRANSISTOR

Method for Manufacturing Semiconductor Substrate of Large-power Device

PHOTO DETECTOR CONSISTING OF TUNNELING FIELD-EFFECT TRANSISTORS AND...