Xiaohua Lou

Person

Bloomington, MN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory cell with phonon-blocking insulating layer
- Patent number 8,860,157
- Issue date Oct 14, 2014
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Unipolar spin-transfer switching memory unit
- Patent number 8,750,036
- Issue date Jun 10, 2014
- Seagate Technology, LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic stack with oxide to reduce switching current
- Patent number 8,686,524
- Issue date Apr 1, 2014
- Seagate Technology LLC
- Xiaohua Lou
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic stack having assist layers
- Patent number 8,670,271
- Issue date Mar 11, 2014
- Seagate Technology LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic memory with asymmetric energy barrier
- Patent number 8,634,223
- Issue date Jan 21, 2014
- Seagate Technology LLC
- Wenzhong Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Staggered magnetic tunnel junction
- Patent number 8,537,607
- Issue date Sep 17, 2013
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Grant
Unipolar spin-transfer switching memory unit
- Patent number 8,531,876
- Issue date Sep 10, 2013
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with compensation element
- Patent number 8,508,988
- Issue date Aug 13, 2013
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Static magnetic field assisted resistive sense element
- Patent number 8,466,524
- Issue date Jun 18, 2013
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Static magnetic field assisted resistive sense element
- Patent number 8,466,525
- Issue date Jun 18, 2013
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic stack with oxide to reduce switching current
- Patent number 8,426,222
- Issue date Apr 23, 2013
- Seagate Technology LLC
- Xiaohua Lou
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic stack having assist layer
- Patent number 8,416,620
- Issue date Apr 9, 2013
- Seagate Technology LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cell with phonon-blocking insulating layer
- Patent number 8,405,171
- Issue date Mar 26, 2013
- Seagate Technology LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Asymmetric write current compensation
- Patent number 8,320,169
- Issue date Nov 27, 2012
- Seagate Technology LLC
- Wenzhong Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory (MRAM) utilizing magnetic flip-flop s...
- Patent number 8,295,072
- Issue date Oct 23, 2012
- Seagate Technology LLC
- Dimitar V. Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Grant
Non volatile memory including stabilizing structures
- Patent number 8,289,756
- Issue date Oct 16, 2012
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-bit magnetic memory with independently programmable free laye...
- Patent number 8,279,662
- Issue date Oct 2, 2012
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Grant
Unipolar spin-transfer switching memory unit
- Patent number 8,233,319
- Issue date Jul 31, 2012
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic stack with oxide to reduce switching current
- Patent number 8,217,478
- Issue date Jul 10, 2012
- Seagate Technology LLC
- Xiaohua Lou
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction with compensation element
- Patent number 8,213,222
- Issue date Jul 3, 2012
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Staggered magnetic tunnel junction
- Patent number 8,203,874
- Issue date Jun 19, 2012
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Grant
Reconfigurable magnetic logic device using spin torque
- Patent number 8,203,871
- Issue date Jun 19, 2012
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Grant
Static magnetic field assisted resistive sense element
- Patent number 8,183,654
- Issue date May 22, 2012
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with asymmetric energy barrier
- Patent number 8,169,810
- Issue date May 1, 2012
- Seagate Technology LLC
- Wenzhong Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Asymmetric write current compensation
- Patent number 8,107,282
- Issue date Jan 31, 2012
- Seagate Technology LLC
- Wenzhong Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic devices utilizing spin torque transfer to flip magnetic...
- Patent number 8,077,502
- Issue date Dec 13, 2011
- Seagate Technology LLC
- Dimitar V. Dimitrov
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Electronic devices utilizing spin torque transfer to flip magnetic...
- Patent number 8,077,503
- Issue date Dec 13, 2011
- Seagate Technology LLC
- Dimitar V. Dimitrov
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic stack with oxide to reduce switching current
- Patent number 8,035,177
- Issue date Oct 11, 2011
- Seagate Technology LLC
- Xiaohua Lou
Information Patent Grant
Magnetic tunnel junction with compensation element
- Patent number 8,023,316
- Issue date Sep 20, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Static magnetic field assisted resistive sense element
- Patent number 7,999,337
- Issue date Aug 16, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
UNIPOLAR SPIN-TRANSFER SWITCHING MEMORY UNIT
- Publication number 20140003138
- Publication date Jan 2, 2014
- SEAGATE TECHNOLOGY LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cell with Phonon-Blocking Insulating Layer
- Publication number 20130200476
- Publication date Aug 8, 2013
- SEAGATE TECHNOLOGY LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON VOLATILE MEMORY INCLUDING STABILIZING STRUCTURES
- Publication number 20120299135
- Publication date Nov 29, 2012
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
UNIPOLAR SPIN-TRANSFER SWITCHING MEMORY UNIT
- Publication number 20120257446
- Publication date Oct 11, 2012
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT
- Publication number 20120257447
- Publication date Oct 11, 2012
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC STACK WITH OXIDE TO REDUCE SWITCHING CURRENT
- Publication number 20120241886
- Publication date Sep 27, 2012
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Application
STAGGERED MAGNETIC TUNNEL JUNCTION
- Publication number 20120228729
- Publication date Sep 13, 2012
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY WITH ASYMMETRIC ENERGY BARRIER
- Publication number 20120201075
- Publication date Aug 9, 2012
- Seagate Technology LLC
- Wenzhong Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Bit Magnetic Memory with Independently Programmable Free Laye...
- Publication number 20120120718
- Publication date May 17, 2012
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cell With Phonon-Blocking Insulating Layer
- Publication number 20120119313
- Publication date May 17, 2012
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
Asymmetric Write Current Compensation
- Publication number 20120087175
- Publication date Apr 12, 2012
- Seagate Technology LLC
- Wenzhong Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC STACK WITH OXIDE TO REDUCE SWITCHING CURRENT
- Publication number 20120021535
- Publication date Jan 26, 2012
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT
- Publication number 20110298068
- Publication date Dec 8, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
Static Magnetic Field Assisted Resistive Sense Element
- Publication number 20110228597
- Publication date Sep 22, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY (MRAM) UTILIZING MAGNETIC FLIP-FLOP S...
- Publication number 20110176360
- Publication date Jul 21, 2011
- Seagate Technology LLC
- Dimitar V. Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICES UTILIZING SPIN TORQUE TRANSFER TO FLIP MAGNETIC...
- Publication number 20110170342
- Publication date Jul 14, 2011
- Seagate Technology LLC
- Dimitar V. Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICES UTILIZING SPIN TORQUE TRANSFER TO FLIP MAGNETIC...
- Publication number 20110169114
- Publication date Jul 14, 2011
- Seagate Technology LLC
- Dimitar V. Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Application
Static Magnetic Field Assisted Resistive Sense Element
- Publication number 20110149642
- Publication date Jun 23, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
Static Magnetic Field Assisted Resistive Sense Element
- Publication number 20110149641
- Publication date Jun 23, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
Asymmetric Write Current Compensation
- Publication number 20110134688
- Publication date Jun 9, 2011
- Seagate Technology LLC
- Wenzhong Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
RECONFIGURABLE MAGNETIC LOGIC DEVICE USING SPIN TORQUE
- Publication number 20110069536
- Publication date Mar 24, 2011
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC STACK HAVING ASSIST LAYER
- Publication number 20110058412
- Publication date Mar 10, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
STAGGERED MAGNETIC TUNNEL JUNCTION
- Publication number 20110026320
- Publication date Feb 3, 2011
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT
- Publication number 20110019465
- Publication date Jan 27, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
Static Magnetic Field Assisted Resistive Sense Element
- Publication number 20110007430
- Publication date Jan 13, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC STACK HAVING ASSIST LAYER
- Publication number 20100271870
- Publication date Oct 28, 2010
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Sense Memory with Complementary Programmable Recording La...
- Publication number 20100254174
- Publication date Oct 7, 2010
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
STAGGERED STRAM CELL
- Publication number 20100188895
- Publication date Jul 29, 2010
- Seagate Technology LLC
- Xiaohua Lou
- G11 - INFORMATION STORAGE
Information Patent Application
NON VOLATILE MEMORY INCLUDING STABILIZING STRUCTURES
- Publication number 20100128520
- Publication date May 27, 2010
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
ST-RAM EMPLOYING A SPIN FILTER
- Publication number 20100102405
- Publication date Apr 29, 2010
- Seagate Technology LLC
- Xiaohua Lou
- H01 - BASIC ELECTRIC ELEMENTS

Xiaohua Lou

Person

Patents Grantslast 30 patents

Memory cell with phonon-blocking insulating layer

Unipolar spin-transfer switching memory unit

Magnetic stack with oxide to reduce switching current

Magnetic stack having assist layers

Magnetic memory with asymmetric energy barrier

Staggered magnetic tunnel junction

Unipolar spin-transfer switching memory unit

Magnetic tunnel junction with compensation element

Static magnetic field assisted resistive sense element

Static magnetic field assisted resistive sense element

Magnetic stack with oxide to reduce switching current

Magnetic stack having assist layer

Memory cell with phonon-blocking insulating layer

Asymmetric write current compensation

Magnetic random access memory (MRAM) utilizing magnetic flip-flop s...

Non volatile memory including stabilizing structures

Multi-bit magnetic memory with independently programmable free laye...

Unipolar spin-transfer switching memory unit

Magnetic stack with oxide to reduce switching current

Magnetic tunnel junction with compensation element

Staggered magnetic tunnel junction

Reconfigurable magnetic logic device using spin torque

Static magnetic field assisted resistive sense element

Magnetic memory with asymmetric energy barrier

Asymmetric write current compensation

Electronic devices utilizing spin torque transfer to flip magnetic...

Electronic devices utilizing spin torque transfer to flip magnetic...

Magnetic stack with oxide to reduce switching current

Magnetic tunnel junction with compensation element

Static magnetic field assisted resistive sense element

Patents Applicationslast 30 patents

UNIPOLAR SPIN-TRANSFER SWITCHING MEMORY UNIT

Memory Cell with Phonon-Blocking Insulating Layer

NON VOLATILE MEMORY INCLUDING STABILIZING STRUCTURES

UNIPOLAR SPIN-TRANSFER SWITCHING MEMORY UNIT

MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT

MAGNETIC STACK WITH OXIDE TO REDUCE SWITCHING CURRENT

STAGGERED MAGNETIC TUNNEL JUNCTION

MAGNETIC MEMORY WITH ASYMMETRIC ENERGY BARRIER

Multi-Bit Magnetic Memory with Independently Programmable Free Laye...

Memory Cell With Phonon-Blocking Insulating Layer

Asymmetric Write Current Compensation

MAGNETIC STACK WITH OXIDE TO REDUCE SWITCHING CURRENT

MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT

Static Magnetic Field Assisted Resistive Sense Element

MAGNETIC RANDOM ACCESS MEMORY (MRAM) UTILIZING MAGNETIC FLIP-FLOP S...

ELECTRONIC DEVICES UTILIZING SPIN TORQUE TRANSFER TO FLIP MAGNETIC...

ELECTRONIC DEVICES UTILIZING SPIN TORQUE TRANSFER TO FLIP MAGNETIC...

Static Magnetic Field Assisted Resistive Sense Element

Static Magnetic Field Assisted Resistive Sense Element

Asymmetric Write Current Compensation

RECONFIGURABLE MAGNETIC LOGIC DEVICE USING SPIN TORQUE

MAGNETIC STACK HAVING ASSIST LAYER

STAGGERED MAGNETIC TUNNEL JUNCTION

MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT

Static Magnetic Field Assisted Resistive Sense Element

MAGNETIC STACK HAVING ASSIST LAYER

Resistive Sense Memory with Complementary Programmable Recording La...

STAGGERED STRAM CELL

NON VOLATILE MEMORY INCLUDING STABILIZING STRUCTURES

ST-RAM EMPLOYING A SPIN FILTER