Xiaoping DAI

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Zhuzhou, Hunan, CN

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Patents Grantslast 30 patents

Information Patent Grant
Insulated gate bipolar transistor and preparation method therefor
- Patent number 10,418,469
- Issue date Sep 17, 2019
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Guoyou Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CELLULAR STRUCTURE OF SILICON CARBIDE MOSFET DEVICE, AND SILICON CA...
- Publication number 20220406896
- Publication date Dec 22, 2022
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Xiaoping Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND CELL STRUCTURE THEREOF
- Publication number 20220406929
- Publication date Dec 22, 2022
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Yafei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREFOR
- Publication number 20180190805
- Publication date Jul 5, 2018
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Guoyou LIU
- H01 - BASIC ELECTRIC ELEMENTS