Xiaoxin XU

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Reconfigurable PUF device based on fully electric field-controlled...
- Patent number 12,160,529
- Issue date Dec 3, 2024
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Guozhong Xing
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Neural network operation device
- Patent number 12,124,945
- Issue date Oct 22, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Writing method and erasing method of fusion memory
- Patent number 12,002,500
- Issue date Jun 4, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- G11 - INFORMATION STORAGE
Information Patent Grant
Fusion memory
- Patent number 11,776,607
- Issue date Oct 3, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
1S1R memory integrated structure with larger selector surface area...
- Patent number 11,205,750
- Issue date Dec 21, 2021
- Institute of Microelectronics Chinese Academy of Sciences
- Qing Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-gating resistive storage device having resistance transition l...
- Patent number 10,720,578
- Issue date Jul 21, 2020
- The Institute of Microelectronics of Chinese Academy of Sciences
- Hangbing LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selection device for use in bipolar resistive memory and manufactur...
- Patent number 10,665,780
- Issue date May 26, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Ming Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PREPARING RESERVOIR ELEMENT
- Publication number 20240260488
- Publication date Aug 1, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Xiaoxin XU
Information Patent Application
THREE-DIMENSIONAL RESERVOIR BASED ON VOLATILE THREE-DIMENSIONAL MEM...
- Publication number 20240130251
- Publication date Apr 18, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Xiaoxin XU
Information Patent Application
ACTIVATION FUNCTION GENERATOR BASED ON MAGNETIC DOMAIN WALL DRIVEN...
- Publication number 20240122075
- Publication date Apr 11, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Guozhong XING
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND METHOD OF PREPARING THE SAME
- Publication number 20240023469
- Publication date Jan 18, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Xiaoxin XU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT STRUCTURE AND METHOD OF OPERATING MEMORY CIRCUIT STR...
- Publication number 20230368838
- Publication date Nov 16, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Xiaoxin Xu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL STRUCTURE, MEMORY ARRAY STRUCTURE, AND VOLTAGE BIASING...
- Publication number 20230197152
- Publication date Jun 22, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing LV
- G11 - INFORMATION STORAGE
Information Patent Application
RECONFIGURABLE PUF DEVICE BASED ON FULLY ELECTRIC FIELD-CONTROLLED...
- Publication number 20230124011
- Publication date Apr 20, 2023
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Guozhong XING
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NEURAL NETWORK OPERATION SYSTEM
- Publication number 20220172035
- Publication date Jun 2, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing LV
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY
- Publication number 20220122997
- Publication date Apr 21, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRITING METHOD AND ERASING METHOD OF FUSION MEMORY
- Publication number 20220115052
- Publication date Apr 14, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing LV
- G11 - INFORMATION STORAGE
Information Patent Application
FUSION MEMORY
- Publication number 20220093150
- Publication date Mar 24, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR PREPARING THE SAME
- Publication number 20210296579
- Publication date Sep 23, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Qi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
1S1R MEMORY INTEGRATED STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200176674
- Publication date Jun 4, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Qing Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR BASED ON TRANSITION METAL OXIDE AND PREPARATION METHOD THE...
- Publication number 20200058704
- Publication date Feb 20, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTION DEVICE FOR USE IN BIPOLAR RESISTIVE MEMORY AND MANUFACTUR...
- Publication number 20190115529
- Publication date Apr 18, 2019
- Institute of Microelectronics, Chinese Academy of Sciences
- Ming LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-GATING RESISTIVE STORAGE DEVICE AND METHOD FOR FABRICATION THE...
- Publication number 20190081237
- Publication date Mar 14, 2019
- THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES
- Hangbing LV
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Reconfigurable PUF device based on fully electric field-controlled...

Neural network operation device

Writing method and erasing method of fusion memory

Fusion memory

1S1R memory integrated structure with larger selector surface area...

Self-gating resistive storage device having resistance transition l...

Selection device for use in bipolar resistive memory and manufactur...

Patents Applicationslast 30 patents

METHOD FOR PREPARING RESERVOIR ELEMENT

THREE-DIMENSIONAL RESERVOIR BASED ON VOLATILE THREE-DIMENSIONAL MEM...

ACTIVATION FUNCTION GENERATOR BASED ON MAGNETIC DOMAIN WALL DRIVEN...

RESISTIVE RANDOM ACCESS MEMORY AND METHOD OF PREPARING THE SAME

MEMORY CIRCUIT STRUCTURE AND METHOD OF OPERATING MEMORY CIRCUIT STR...

MEMORY CELL STRUCTURE, MEMORY ARRAY STRUCTURE, AND VOLTAGE BIASING...

RECONFIGURABLE PUF DEVICE BASED ON FULLY ELECTRIC FIELD-CONTROLLED...

NEURAL NETWORK OPERATION SYSTEM

MEMORY

WRITING METHOD AND ERASING METHOD OF FUSION MEMORY

FUSION MEMORY

RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR PREPARING THE SAME

1S1R MEMORY INTEGRATED STRUCTURE AND METHOD FOR FABRICATING THE SAME

SELECTOR BASED ON TRANSITION METAL OXIDE AND PREPARATION METHOD THE...

SELECTION DEVICE FOR USE IN BIPOLAR RESISTIVE MEMORY AND MANUFACTUR...

SELF-GATING RESISTIVE STORAGE DEVICE AND METHOD FOR FABRICATION THE...