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Yongin-si, KR
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Patents Grants
last 30 patents
Information
Patent Grant
Crystalline nanowire substrate, method of manufacturing the same, a...
Patent number
8,022,408
Issue date
Sep 20, 2011
Samsung Electronics Co., Ltd.
Hans S. Cho
B82 - NANO-TECHNOLOGY
Information
Patent Grant
Semiconductor device including gate stack formed on inclined surfac...
Patent number
8,012,819
Issue date
Sep 6, 2011
Samsung Electronics Co., Ltd.
Xiaoxin Zhang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device including single crystal silicon layer
Patent number
7,772,711
Issue date
Aug 10, 2010
Samsung Electronics Co., Ltd.
Takashi Noguchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Si nanowire substrate
Patent number
7,714,330
Issue date
May 11, 2010
Samsung Electronics Co., Ltd.
Hans S. Cho
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device including gate stack formed on inclined surfac...
Patent number
7,667,300
Issue date
Feb 23, 2010
Samsung Electronics Co., Ltd.
Xiaoxin Zhang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming a more highly-oriented silicon layer and substrat...
Patent number
7,662,678
Issue date
Feb 16, 2010
Samsung Electronics Co., Ltd.
Wenxu Xianyu
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Method of fabricating orientation-controlled single-crystalline wir...
Patent number
7,566,364
Issue date
Jul 28, 2009
Samsung Electronics Co., Ltd.
Wenxu Xianyu
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of forming single crystalline silicon layer, structure inclu...
Patent number
7,560,317
Issue date
Jul 14, 2009
Samsung Electronics Co., Ltd.
Takashi Noguchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semi-conductor-on-insulator structure, semiconductor devices using...
Patent number
7,557,411
Issue date
Jul 7, 2009
Samsung Electronics Co., Ltd.
Takashi Noguchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Si nanowire substrate, method of manufacturing the same, and method...
Patent number
7,297,615
Issue date
Nov 20, 2007
Samsung Electronics, Co., Ltd.
Hans S. Cho
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Crystalline nanowire substrate, method of manufacturing the same, a...
Publication number
20100200834
Publication date
Aug 12, 2010
Hans S. Cho
B82 - NANO-TECHNOLOGY
Information
Patent Application
Semiconductor device including gate stack formed on inclined surfac...
Publication number
20100112763
Publication date
May 6, 2010
Xiaoxin Zhang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Single crystal substrate and method of fabricating the same
Publication number
20100041214
Publication date
Feb 18, 2010
Hans S. Cho
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor devices including transistors and methods of fabricat...
Publication number
20070111605
Publication date
May 17, 2007
SAMSUNG ELECTRONICS CO., LTD.
Xiaoxin Zhang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of forming single crystalline silicon layer, structure inclu...
Publication number
20070048912
Publication date
Mar 1, 2007
Takashi Noguchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of fabricating orientation-controlled single-crystalline wir...
Publication number
20070017439
Publication date
Jan 25, 2007
Wenxu Xianyu
C30 - CRYSTAL GROWTH
Information
Patent Application
Methods of forming a more highly-oriented silicon layer and substra...
Publication number
20060292313
Publication date
Dec 28, 2006
Wenxu Xianyu
C30 - CRYSTAL GROWTH
Information
Patent Application
Semi-conductor-on-insulator structure, semiconductor devices using...
Publication number
20060267017
Publication date
Nov 30, 2006
SAMSUNG ELECTRONICS CO., LTD.
Takashi Noguchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Si nanowire substrate, method of manufacturing the same, and method...
Publication number
20060261409
Publication date
Nov 23, 2006
SAMSUNG ELECTRONICS CO., LTD.
Hans S. Cho
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Single crystal substrate and method of fabricating the same
Publication number
20060113596
Publication date
Jun 1, 2006
Samsung Electronics Co., Ltd.
Hans S. Cho
H01 - BASIC ELECTRIC ELEMENTS