Xin Miao

Person

Guilderland, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical transport field-effect transistor with ring-shaped wrap-ar...
- Patent number 11,908,937
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tri-layer STI liner for nanosheet leakage control
- Patent number 11,881,505
- Issue date Jan 23, 2024
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor with dielectric fin extension
- Patent number 11,764,259
- Issue date Sep 19, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field-effect transistor with reduced subthreshold swing
- Patent number 11,735,658
- Issue date Aug 22, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion break isolation for gate-all-around field-effect t...
- Patent number 11,728,340
- Issue date Aug 15, 2023
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistors with strained channel regions
- Patent number 11,705,517
- Issue date Jul 18, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with ultra low-k spacer and improved patternin...
- Patent number 11,664,422
- Issue date May 30, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high mobility complementary metal-oxide-semicondu...
- Patent number 11,637,041
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor devices with composite high-K and low-K spacers...
- Patent number 11,621,348
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field-effect transistor with reduced subthreshold swing
- Patent number 11,575,042
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor with a reduced gate-to-bottom...
- Patent number 11,515,401
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet semiconductor devices with n/p boundary structure
- Patent number 11,502,169
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor with a reduced gate-to-bottom...
- Patent number 11,495,673
- Issue date Nov 8, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DNA sequencing with stacked nanopores
- Patent number 11,453,911
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Zhenxing Bi
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
VFET device with controllable top spacer
- Patent number 11,430,864
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wimpy vertical transport field effect transistor with dipole liners
- Patent number 11,404,581
- Issue date Aug 2, 2022
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having forked nanosheets with wraparound contacts
- Patent number 11,398,480
- Issue date Jul 26, 2022
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fishbone long channel nanosheet device
- Patent number 11,329,167
- Issue date May 10, 2022
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap around contact for nanosheet source drain epitaxy
- Patent number 11,302,813
- Issue date Apr 12, 2022
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming source and drain regions for sheet transistors
- Patent number 11,289,484
- Issue date Mar 29, 2022
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained nanowire transistor with embedded epi
- Patent number 11,251,280
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor devices with sidewall implant under bottom...
- Patent number 11,222,979
- Issue date Jan 11, 2022
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with reduced parasitic capacitance
- Patent number 11,205,728
- Issue date Dec 21, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor and method of manufacturing a vert...
- Patent number 11,201,241
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D ReRAM formed by metal-assisted chemical etching with replacement...
- Patent number 11,196,001
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom dielectric isolation structure for nanosheet containing devices
- Patent number 11,195,911
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked vertical field effect transistor with self-aligned junctions
- Patent number 11,177,369
- Issue date Nov 16, 2021
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal budget compatible punch through stop integration using...
- Patent number 11,171,204
- Issue date Nov 9, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming III-V on insulator structure on semiconductor sub...
- Patent number 11,164,940
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal budget compatible punch through stop integration using...
- Patent number 11,152,460
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL TRANSISTORS HAVING IMPROVED CONTROL OF PARASITIC CAPACITAN...
- Publication number 20230142760
- Publication date May 11, 2023
- International Business Machines Corporation
- ChoongHyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE WITH TRI-LAYER BOTTOM DIELECTRIC ISOLATION
- Publication number 20230099214
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR WITH DIELECTRIC FIN EXTENSION
- Publication number 20230023157
- Publication date Jan 26, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH RING-SHAPED WRAP-AR...
- Publication number 20230013383
- Publication date Jan 19, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR WITH ULTRA LOW-K SPACER AND IMPROVED PATTERNIN...
- Publication number 20220399439
- Publication date Dec 15, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIMPY VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR WITH DIPOLE LINERS
- Publication number 20220199834
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET SEMICONDUCTOR DEVICES WITH N/P BOUNDARY STRUCTURE
- Publication number 20220199772
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING FORKED NANOSHEETS WITH WRAPAROUND CONTACTS
- Publication number 20210358911
- Publication date Nov 18, 2021
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistor Devices with Sidewall Implant Under Bottom...
- Publication number 20210336056
- Publication date Oct 28, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SOURCE AND DRAIN REGIONS FOR SHEET TRANSISTORS
- Publication number 20210210489
- Publication date Jul 8, 2021
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FISHBONE LONG CHANNEL NANOSHEET DEVICE
- Publication number 20210210637
- Publication date Jul 8, 2021
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING A VERT...
- Publication number 20210210634
- Publication date Jul 8, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRI-LAYER STI LINER FOR NANOSHEET LEAKAGE CONTROL
- Publication number 20210202325
- Publication date Jul 1, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM DIELECTRIC ISOLATION STRUCTURE FOR NANOSHEET CONTAINING DEVICES
- Publication number 20210193797
- Publication date Jun 24, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP AROUND CONTACT FOR NANOSHEET SOURCE DRAIN EPITAXY
- Publication number 20210193829
- Publication date Jun 24, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED NANOWIRE TRANSISTOR WITH EMBEDDED EPI
- Publication number 20210184002
- Publication date Jun 17, 2021
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D ReRAM FORMED BY METAL-ASSISTED CHEMICAL ETCHING WITH REPLACEMENT...
- Publication number 20210159409
- Publication date May 27, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTORS WITH STRAINED CHANNEL REGIONS
- Publication number 20210151601
- Publication date May 20, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LONG CHANNEL NANOSHEET FET HAVING TRI-LAYER SPACERS
- Publication number 20210151607
- Publication date May 20, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR DEVICES WITH COMPOSITE HIGH-K AND LOW-K SPACERS...
- Publication number 20210119043
- Publication date Apr 22, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION BREAK ISOLATION FOR GATE-ALL-AROUND FIELD-EFFECT T...
- Publication number 20210118878
- Publication date Apr 22, 2021
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH MOBILITY COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICE...
- Publication number 20210111195
- Publication date Apr 15, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED JUNCTIONS
- Publication number 20210091207
- Publication date Mar 25, 2021
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED-NANOSHEET SEMICONDUCTOR STRUCTURES WITH SUPPORT STRUCTURES
- Publication number 20210083127
- Publication date Mar 18, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY (PCM) WITH GRADUAL RESET CHARACTERISTICS
- Publication number 20200411087
- Publication date Dec 31, 2020
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL FET WITH SYMMETRIC JUNCTIONS
- Publication number 20200395467
- Publication date Dec 17, 2020
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION BREAK ISOLATION FOR GATE-ALL-AROUND FIELD-EFFECT T...
- Publication number 20200381426
- Publication date Dec 3, 2020
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20200373434
- Publication date Nov 26, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRI-LAYER STI LINER FOR NANOSHEET LEAKAGE CONTROL
- Publication number 20200357703
- Publication date Nov 12, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTORS WITH TOP SPACERS
- Publication number 20200335605
- Publication date Oct 22, 2020
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Vertical transport field-effect transistor with ring-shaped wrap-ar...

Tri-layer STI liner for nanosheet leakage control

Vertical field-effect transistor with dielectric fin extension

Tunnel field-effect transistor with reduced subthreshold swing

Single diffusion break isolation for gate-all-around field-effect t...

Nanosheet transistors with strained channel regions

Nanosheet transistor with ultra low-k spacer and improved patternin...

Method of forming high mobility complementary metal-oxide-semicondu...

Vertical transistor devices with composite high-K and low-K spacers...

Tunnel field-effect transistor with reduced subthreshold swing

Vertical fin field effect transistor with a reduced gate-to-bottom...

Nanosheet semiconductor devices with n/p boundary structure

Vertical fin field effect transistor with a reduced gate-to-bottom...

DNA sequencing with stacked nanopores

VFET device with controllable top spacer

Wimpy vertical transport field effect transistor with dipole liners

Transistor having forked nanosheets with wraparound contacts

Fishbone long channel nanosheet device

Wrap around contact for nanosheet source drain epitaxy

Forming source and drain regions for sheet transistors

Strained nanowire transistor with embedded epi

Field-effect transistor devices with sidewall implant under bottom...

Vertical field effect transistor with reduced parasitic capacitance

Vertical field effect transistor and method of manufacturing a vert...

3D ReRAM formed by metal-assisted chemical etching with replacement...

Bottom dielectric isolation structure for nanosheet containing devices

Stacked vertical field effect transistor with self-aligned junctions

High thermal budget compatible punch through stop integration using...

Method of forming III-V on insulator structure on semiconductor sub...

High thermal budget compatible punch through stop integration using...

Patents Applicationslast 30 patents

VERTICAL TRANSISTORS HAVING IMPROVED CONTROL OF PARASITIC CAPACITAN...

NANOSHEET DEVICE WITH TRI-LAYER BOTTOM DIELECTRIC ISOLATION

VERTICAL FIELD-EFFECT TRANSISTOR WITH DIELECTRIC FIN EXTENSION

VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH RING-SHAPED WRAP-AR...

NANOSHEET TRANSISTOR WITH ULTRA LOW-K SPACER AND IMPROVED PATTERNIN...

WIMPY VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR WITH DIPOLE LINERS

NANOSHEET SEMICONDUCTOR DEVICES WITH N/P BOUNDARY STRUCTURE

TRANSISTOR HAVING FORKED NANOSHEETS WITH WRAPAROUND CONTACTS

Field-Effect Transistor Devices with Sidewall Implant Under Bottom...

FORMING SOURCE AND DRAIN REGIONS FOR SHEET TRANSISTORS

FISHBONE LONG CHANNEL NANOSHEET DEVICE

VERTICAL FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING A VERT...

TRI-LAYER STI LINER FOR NANOSHEET LEAKAGE CONTROL

BOTTOM DIELECTRIC ISOLATION STRUCTURE FOR NANOSHEET CONTAINING DEVICES

WRAP AROUND CONTACT FOR NANOSHEET SOURCE DRAIN EPITAXY

STRAINED NANOWIRE TRANSISTOR WITH EMBEDDED EPI

3D ReRAM FORMED BY METAL-ASSISTED CHEMICAL ETCHING WITH REPLACEMENT...

NANOSHEET TRANSISTORS WITH STRAINED CHANNEL REGIONS

LONG CHANNEL NANOSHEET FET HAVING TRI-LAYER SPACERS

VERTICAL TRANSISTOR DEVICES WITH COMPOSITE HIGH-K AND LOW-K SPACERS...

SINGLE DIFFUSION BREAK ISOLATION FOR GATE-ALL-AROUND FIELD-EFFECT T...

HIGH MOBILITY COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICE...

STACKED VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED JUNCTIONS

STACKED-NANOSHEET SEMICONDUCTOR STRUCTURES WITH SUPPORT STRUCTURES

PHASE CHANGE MEMORY (PCM) WITH GRADUAL RESET CHARACTERISTICS

VERTICAL FET WITH SYMMETRIC JUNCTIONS

SINGLE DIFFUSION BREAK ISOLATION FOR GATE-ALL-AROUND FIELD-EFFECT T...

VERTICAL FIELD EFFECT TRANSISTOR WITH REDUCED PARASITIC CAPACITANCE

TRI-LAYER STI LINER FOR NANOSHEET LEAKAGE CONTROL

VERTICAL TRANSISTORS WITH TOP SPACERS