Xinhui Wang

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 11,145,658
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 11,056,493
- Issue date Jul 6, 2021
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 10,707,217
- Issue date Jul 7, 2020
- International Business Machines Corporation
- Ricardo A. Donaton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including an integrated FinFET with deep t...
- Patent number 10,535,662
- Issue date Jan 14, 2020
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 10,361,207
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Wrap-around fin for contacting a capacitor strap of a DRAM
- Patent number 10,290,637
- Issue date May 14, 2019
- GLOBALFOUNDRIES Inc.
- Felix Beaudoin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 10,269,806
- Issue date Apr 23, 2019
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Fabricating Fin-based split-gate high-drain-voltage transistor by w...
- Patent number 10,256,150
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to prevent EPI short between trenches in FinFE...
- Patent number 10,177,154
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating fin-based split-gate high-drain-voltage transistor by w...
- Patent number 10,170,368
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 10,050,039
- Issue date Aug 14, 2018
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 10,042,968
- Issue date Aug 7, 2018
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 10,037,998
- Issue date Jul 31, 2018
- International Business Machines Corporation
- Ricardo A. Donaton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to prevent EPI short between trenches in FINFE...
- Patent number 9,818,741
- Issue date Nov 14, 2017
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 9,679,917
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Ricardo A. Donaton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated fin and strap structure for an access transistor of a tr...
- Patent number 9,576,964
- Issue date Feb 21, 2017
- International Businesss Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including an integrated finFET with deep t...
- Patent number 9,576,096
- Issue date Feb 21, 2017
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming integrated fin and strap structure for an access...
- Patent number 9,564,444
- Issue date Feb 7, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wet bottling process for small diameter deep trench capacitors
- Patent number 9,406,683
- Issue date Aug 2, 2016
- International Business Machines Corporation
- Russell H. Arndt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around fin for contacting a capacitor strap of a DRAM
- Patent number 9,385,131
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Felix Beaudoin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET field-effect transistors with atomic layer doping
- Patent number 9,287,136
- Issue date Mar 15, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D transistor channel mobility enhancement
- Patent number 9,275,907
- Issue date Mar 1, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of replacement source/drain for 3D CMOS transistors
- Patent number 9,105,741
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed source/drain CMOS and method of forming same
- Patent number 9,059,318
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Amlan Majumdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of field-effect transistors with atomic layer doping
- Patent number 9,048,261
- Issue date Jun 2, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process variability tolerant hard mask for replacement metal gate f...
- Patent number 9,034,748
- Issue date May 19, 2015
- International Business Machines Corporation
- Christopher V. Baiocco
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
3D transistor channel mobility enhancement
- Patent number 9,023,697
- Issue date May 5, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 8,987,800
- Issue date Mar 24, 2015
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Merged FinFETs and method of manufacturing the same
- Patent number 8,946,028
- Issue date Feb 3, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform finFET gate height
- Patent number 8,928,057
- Issue date Jan 6, 2015
- International Business Machines Corporation
- William Cote
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20200051984
- Publication date Feb 13, 2020
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20190279987
- Publication date Sep 12, 2019
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20190206871
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20180337185
- Publication date Nov 22, 2018
- International Business Machines Corporation
- Ricardo A. DONATON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING FIN-BASED SPLIT-GATE HIGH-DRAIN-VOLTAGE TRANSISTOR BY W...
- Publication number 20180286760
- Publication date Oct 4, 2018
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING FIN-BASED SPLIT-GATE HIGH-DRAIN-VOLTAGE TRANSISTOR BY W...
- Publication number 20180286761
- Publication date Oct 4, 2018
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20180286866
- Publication date Oct 4, 2018
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20180225405
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRUCTURE AND METHOD TO PREVENT EPI SHORT BETWEEN TRENCHES IN FINFE...
- Publication number 20170365606
- Publication date Dec 21, 2017
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20170213835
- Publication date Jul 27, 2017
- International Business Machines Corporation
- Ricardo A. DONATON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20170117281
- Publication date Apr 27, 2017
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20170025418
- Publication date Jan 26, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO PREVENT EPI SHORT BETWEEN TRENCHES IN FINFE...
- Publication number 20170005098
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20160181249
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Guillaume D. BRIEND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20160181253
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Ricardo A. DONATON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WET BOTTLING PROCESS FOR SMALL DIAMETER DEEP TRENCH CAPACITORS
- Publication number 20160163711
- Publication date Jun 9, 2016
- International Business Machines Corporation
- Russell H. Arndt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED FIN AND STRAP STRUCTURE FOR AN ACCESS TRANSISTOR OF A TR...
- Publication number 20160099249
- Publication date Apr 7, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING
- Publication number 20150236118
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20150135156
- Publication date May 14, 2015
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROCESS VARIABILITY TOLERANT HARD MASK FOR REPLACEMENT METAL GATE F...
- Publication number 20150064897
- Publication date Mar 5, 2015
- International Business Machines Corporation
- Christopher V. Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT
- Publication number 20150041858
- Publication date Feb 12, 2015
- International Business Machines Corporation
- KEVIN K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT
- Publication number 20150041911
- Publication date Feb 12, 2015
- GLOBALFOUNDRIES, Inc.
- KEVIN K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONTACTING A CONDUCTIVE STRAP STRUCTURE OF A DRAM
- Publication number 20150037941
- Publication date Feb 5, 2015
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND FIN FOR CONTACTING A CAPACITOR STRAP OF A DRAM
- Publication number 20150037947
- Publication date Feb 5, 2015
- International Business Machines Corporation
- Felix Beaudoin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20150021610
- Publication date Jan 22, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL EPITAXIAL INTEGRATION FOR FinFETS
- Publication number 20140308781
- Publication date Oct 16, 2014
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED FIN AND STRAP STRUCTURE FOR AN ACCESS TRANSISTOR OF A TR...
- Publication number 20140299882
- Publication date Oct 9, 2014
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20140264522
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
UNIFORM FINFET GATE HEIGHT
- Publication number 20140151772
- Publication date Jun 5, 2014
- International Business Machines Corporation
- William Cote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT SOURCE/DRAIN FOR 3D CMOS TRANSISTORS
- Publication number 20140070316
- Publication date Mar 13, 2014
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS

Xinhui Wang

Person

Patents Grantslast 30 patents

Semiconductor structures with deep trench capacitor and methods of...

Semiconductor structures with deep trench capacitor and methods of...

Semiconductor structures with deep trench capacitor and methods of...

Semiconductor structures including an integrated FinFET with deep t...

Semiconductor structures with deep trench capacitor and methods of...

Wrap-around fin for contacting a capacitor strap of a DRAM

Semiconductor structures with deep trench capacitor and methods of...

Fabricating Fin-based split-gate high-drain-voltage transistor by w...

Structure and method to prevent EPI short between trenches in FinFE...

Fabricating fin-based split-gate high-drain-voltage transistor by w...

Semiconductor structures with deep trench capacitor and methods of...

Semiconductor structures with deep trench capacitor and methods of...

Semiconductor structures with deep trench capacitor and methods of...

Structure and method to prevent EPI short between trenches in FINFE...

Semiconductor structures with deep trench capacitor and methods of...

Integrated fin and strap structure for an access transistor of a tr...

Semiconductor structures including an integrated finFET with deep t...

Method of forming integrated fin and strap structure for an access...

Wet bottling process for small diameter deep trench capacitors

Wrap-around fin for contacting a capacitor strap of a DRAM

FinFET field-effect transistors with atomic layer doping

3D transistor channel mobility enhancement

Method of replacement source/drain for 3D CMOS transistors

Stressed source/drain CMOS and method of forming same

Fabrication of field-effect transistors with atomic layer doping

Process variability tolerant hard mask for replacement metal gate f...

3D transistor channel mobility enhancement

Semiconductor structures with deep trench capacitor and methods of...

Merged FinFETs and method of manufacturing the same

Uniform finFET gate height

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

FABRICATING FIN-BASED SPLIT-GATE HIGH-DRAIN-VOLTAGE TRANSISTOR BY W...

FABRICATING FIN-BASED SPLIT-GATE HIGH-DRAIN-VOLTAGE TRANSISTOR BY W...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

STRUCTURE AND METHOD TO PREVENT EPI SHORT BETWEEN TRENCHES IN FINFE...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

STRUCTURE AND METHOD TO PREVENT EPI SHORT BETWEEN TRENCHES IN FINFE...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

WET BOTTLING PROCESS FOR SMALL DIAMETER DEEP TRENCH CAPACITORS

INTEGRATED FIN AND STRAP STRUCTURE FOR AN ACCESS TRANSISTOR OF A TR...

FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

PROCESS VARIABILITY TOLERANT HARD MASK FOR REPLACEMENT METAL GATE F...

3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT

3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT

FINFET CONTACTING A CONDUCTIVE STRAP STRUCTURE OF A DRAM

WRAP-AROUND FIN FOR CONTACTING A CAPACITOR STRAP OF A DRAM

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

DUAL EPITAXIAL INTEGRATION FOR FinFETS

INTEGRATED FIN AND STRAP STRUCTURE FOR AN ACCESS TRANSISTOR OF A TR...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

UNIFORM FINFET GATE HEIGHT

REPLACEMENT SOURCE/DRAIN FOR 3D CMOS TRANSISTORS