Xusheng WU

Person

Ballston Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
IC product comprising a novel insulating gate separation structure...
- Patent number 11,349,013
- Issue date May 31, 2022
- GLOBALFOUNDRIES U.S. INC.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure to provide integrated long channel vertical Fi...
- Patent number 11,081,398
- Issue date Aug 3, 2021
- GLOBALEOUNDRIES U.S. INC.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for reducing gate cut gouging and/or...
- Patent number 10,644,156
- Issue date May 5, 2020
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing finfet devices using narrow and wide gate c...
- Patent number 10,586,860
- Issue date Mar 10, 2020
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective shallow trench isolation (STI) fill for stress engineerin...
- Patent number 10,522,679
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- Ashish Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures
- Patent number 10,510,613
- Issue date Dec 17, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming replacement gate structures on transistor devices
- Patent number 10,483,369
- Issue date Nov 19, 2019
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer integration scheme for FNET and PFET devices
- Patent number 10,468,310
- Issue date Nov 5, 2019
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial region for embedded source/drain region having uniform th...
- Patent number 10,461,155
- Issue date Oct 29, 2019
- GLOBALFOUNDRIES Inc.
- Yoong Hooi Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for forming sigma shaped source/drain...
- Patent number 10,446,683
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal capacitors with enlarged contact areas
- Patent number 10,446,483
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fins with single diffusion break facet improvement using epitaxial...
- Patent number 10,439,026
- Issue date Oct 8, 2019
- GLOBALFOUNDRIES Inc.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite contact etch stop layer
- Patent number 10,388,562
- Issue date Aug 20, 2019
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle of the line (MOL) contact formation method and structure
- Patent number 10,347,531
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structures and multi-Vt scheme based on tapered fin and method...
- Patent number 10,347,740
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for improving performance through gate cut last process
- Patent number 10,347,729
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming upper source/drain regions on a vertical transis...
- Patent number 10,229,999
- Issue date Mar 12, 2019
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned junction structures
- Patent number 10,224,330
- Issue date Mar 5, 2019
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit fabrication with boron etch-stop layer
- Patent number 10,224,418
- Issue date Mar 5, 2019
- GLOBALFOUNDRIES Inc.
- Chengwen Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor formation with critical dimension...
- Patent number 10,217,846
- Issue date Feb 26, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-transport field-effect transistors with an etched-through...
- Patent number 10,211,317
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures and fabrication methods thereof
- Patent number 10,204,991
- Issue date Feb 12, 2019
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with asymmetrical transistor, asymmetrical transistor a...
- Patent number 10,181,468
- Issue date Jan 15, 2019
- GLOBALFOUNDRIES Inc.
- Ziyan Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for gate cut process using a stress m...
- Patent number 10,176,995
- Issue date Jan 8, 2019
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistors with single-diffusion breaks and...
- Patent number 10,121,788
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple Fin heights with dielectric isolation
- Patent number 10,068,810
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preventing bridge formation between replacement gate and source/dra...
- Patent number 10,062,772
- Issue date Aug 28, 2018
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-transport field-effect transistors with an etched-through...
- Patent number 10,050,125
- Issue date Aug 14, 2018
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET devices having asymmetrical epitaxially-grown source and dra...
- Patent number 10,032,910
- Issue date Jul 24, 2018
- GLOBALFOUNDRIES, INC.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor structure with recessed interlayer dielectr...
- Patent number 10,026,818
- Issue date Jul 17, 2018
- GLOBALFOUNDRIES Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND STRUCTURE TO PROVIDE INTEGRATED LONG CHANNEL VERTICAL FI...
- Publication number 20200258789
- Publication date Aug 13, 2020
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SPACERS FOR TAILORING THE SHAPE OF THE SOURCE AND DRAIN R...
- Publication number 20200020770
- Publication date Jan 16, 2020
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE TO PROVIDE INTEGRATED LONG CHANNEL VERTICAL FI...
- Publication number 20190385914
- Publication date Dec 19, 2019
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC PRODUCT COMPRISING A NOVEL INSULATING GATE SEPARATION STRUCTURE...
- Publication number 20190378914
- Publication date Dec 12, 2019
- GLOBALFOUNDRIES INC.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD OF MANUFACTURING FINFET DEVICES USING NARROW AND WIDE GATE...
- Publication number 20190341475
- Publication date Nov 7, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS, AND SYSTEM FOR REDUCING GATE CUT GOUGING AND/OR...
- Publication number 20190280114
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES INC.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES
- Publication number 20190229019
- Publication date Jul 25, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL CAPACITORS WITH ENLARGED CONTACT AREAS
- Publication number 20190221515
- Publication date Jul 18, 2019
- GLOBALFOUNDRIES INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL REGION FOR EMBEDDED SOURCE/DRAIN REGION HAVING UNIFORM TH...
- Publication number 20190148492
- Publication date May 16, 2019
- GLOBALFOUNDRIES INC.
- Yoong Hooi Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SHALLOW TRENCH ISOLATION (STI) FILL FOR STRESS ENGINEERIN...
- Publication number 20190131452
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Ashish Kumar JHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON TRANSISTOR DEVICES
- Publication number 20190131428
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINS WITH SINGLE DIFFUSION BREAK FACET IMPROVEMENT USING EPITAXIAL...
- Publication number 20190115426
- Publication date Apr 18, 2019
- GLOBALFOUNDRIES INC.
- Chun Yu WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR WITH IMPROVED INNER SPACER
- Publication number 20190081155
- Publication date Mar 14, 2019
- GLOBALFOUNDRIES INC.
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR FORMING SIGMA SHAPED SOURCE/DRAIN...
- Publication number 20190081175
- Publication date Mar 14, 2019
- GLOBALFOUDRIES INC.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE CONTACT ETCH STOP LAYER
- Publication number 20190057899
- Publication date Feb 21, 2019
- GLOBALFOUNDRIES INC.
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH AN ETCHED-THROUGH...
- Publication number 20190051735
- Publication date Feb 14, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET FIELD-EFFECT TRANSISTOR WITH SELF-ALIGNED SOURCE/DRAIN IS...
- Publication number 20190035888
- Publication date Jan 31, 2019
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING INTEGRATED CIRCUIT STRUCTURES INCLUDING NOTCH WI...
- Publication number 20180366562
- Publication date Dec 20, 2018
- GLOBALFOUNDRIES INC.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTORS WITH SINGLE-DIFFUSION BREAKS AND...
- Publication number 20180323191
- Publication date Nov 8, 2018
- GLOBALFOUNDRIES INC.
- HAITING WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING UPPER SOURCE/DRAIN REGIONS ON A VERTICAL TRANSIS...
- Publication number 20180248046
- Publication date Aug 30, 2018
- GLOBALFOUNDRIES INC.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF THE LINE (MOL) CONTACT FORMATION METHOD AND STRUCTURE
- Publication number 20180240703
- Publication date Aug 23, 2018
- GLOBALFOUNDRIES INC.
- SIPENG GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR STRUCTURE WITH RECESSED INTERLAYER DIELECTR...
- Publication number 20180233566
- Publication date Aug 16, 2018
- GLOBALFOUNDRIES INC.
- SIPENG GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED JUNCTION STRUCTURES
- Publication number 20180204840
- Publication date Jul 19, 2018
- GLOBALFOUNDRIES INC.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR STRUCTURE WITH RECESSED INTERLAYER DIELECTR...
- Publication number 20180204920
- Publication date Jul 19, 2018
- GLOBALFOUNDRIES INC.
- SIPENG GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE TO PROVIDE INTEGRATED LONG CHANNEL VERTICAL FI...
- Publication number 20180190817
- Publication date Jul 5, 2018
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING REPLACEMENT METAL GATE AND RELATED DEVICE
- Publication number 20180190546
- Publication date Jul 5, 2018
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES WITH LOW RESISTANCE
- Publication number 20180158821
- Publication date Jun 7, 2018
- GLOBALFOUNDRIES INC.
- Changyong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH ASYMMETRICAL TRANSISTOR, ASYMMETRICAL TRANSISTOR A...
- Publication number 20180122795
- Publication date May 3, 2018
- GLOBALFOUNDRIES INC.
- Ziyan Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER INTEGRATION SCHEME FOR NFET AND PFET DEVICES
- Publication number 20180114730
- Publication date Apr 26, 2018
- GLOBALFOUNDRIES INC.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT FABRICATION WITH BORON ETCH-STOP LAYER
- Publication number 20180061969
- Publication date Mar 1, 2018
- GLOBALFOUNDRIES INC.
- Chengwen Pei
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

IC product comprising a novel insulating gate separation structure...

Method and structure to provide integrated long channel vertical Fi...

Methods, apparatus, and system for reducing gate cut gouging and/or...

Method of manufacturing finfet devices using narrow and wide gate c...

Selective shallow trench isolation (STI) fill for stress engineerin...

Contact structures

Methods of forming replacement gate structures on transistor devices

Spacer integration scheme for FNET and PFET devices

Epitaxial region for embedded source/drain region having uniform th...

Methods, apparatus and system for forming sigma shaped source/drain...

Metal-insulator-metal capacitors with enlarged contact areas

Fins with single diffusion break facet improvement using epitaxial...

Composite contact etch stop layer

Middle of the line (MOL) contact formation method and structure

Fin structures and multi-Vt scheme based on tapered fin and method...

Device for improving performance through gate cut last process

Methods of forming upper source/drain regions on a vertical transis...

Self-aligned junction structures

Integrated circuit fabrication with boron etch-stop layer

Vertical field effect transistor formation with critical dimension...

Vertical-transport field-effect transistors with an etched-through...

Transistor structures and fabrication methods thereof

Memory cell with asymmetrical transistor, asymmetrical transistor a...

Methods, apparatus and system for gate cut process using a stress m...

Fin-type field effect transistors with single-diffusion breaks and...

Multiple Fin heights with dielectric isolation

Preventing bridge formation between replacement gate and source/dra...

Vertical-transport field-effect transistors with an etched-through...

FinFET devices having asymmetrical epitaxially-grown source and dra...

Field effect transistor structure with recessed interlayer dielectr...

Patents Applicationslast 30 patents

METHOD AND STRUCTURE TO PROVIDE INTEGRATED LONG CHANNEL VERTICAL FI...

COMPOSITE SPACERS FOR TAILORING THE SHAPE OF THE SOURCE AND DRAIN R...

METHOD AND STRUCTURE TO PROVIDE INTEGRATED LONG CHANNEL VERTICAL FI...

IC PRODUCT COMPRISING A NOVEL INSULATING GATE SEPARATION STRUCTURE...

A METHOD OF MANUFACTURING FINFET DEVICES USING NARROW AND WIDE GATE...

METHODS, APPARATUS, AND SYSTEM FOR REDUCING GATE CUT GOUGING AND/OR...

CONTACT STRUCTURES

METAL-INSULATOR-METAL CAPACITORS WITH ENLARGED CONTACT AREAS

EPITAXIAL REGION FOR EMBEDDED SOURCE/DRAIN REGION HAVING UNIFORM TH...

SELECTIVE SHALLOW TRENCH ISOLATION (STI) FILL FOR STRESS ENGINEERIN...

METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON TRANSISTOR DEVICES

FINS WITH SINGLE DIFFUSION BREAK FACET IMPROVEMENT USING EPITAXIAL...

NANOSHEET TRANSISTOR WITH IMPROVED INNER SPACER

METHODS, APPARATUS AND SYSTEM FOR FORMING SIGMA SHAPED SOURCE/DRAIN...

COMPOSITE CONTACT ETCH STOP LAYER

VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH AN ETCHED-THROUGH...

NANOSHEET FIELD-EFFECT TRANSISTOR WITH SELF-ALIGNED SOURCE/DRAIN IS...

METHODS OF FORMING INTEGRATED CIRCUIT STRUCTURES INCLUDING NOTCH WI...

FIN-TYPE FIELD EFFECT TRANSISTORS WITH SINGLE-DIFFUSION BREAKS AND...

METHODS OF FORMING UPPER SOURCE/DRAIN REGIONS ON A VERTICAL TRANSIS...

MIDDLE OF THE LINE (MOL) CONTACT FORMATION METHOD AND STRUCTURE

FIELD EFFECT TRANSISTOR STRUCTURE WITH RECESSED INTERLAYER DIELECTR...

SELF-ALIGNED JUNCTION STRUCTURES

FIELD EFFECT TRANSISTOR STRUCTURE WITH RECESSED INTERLAYER DIELECTR...

METHOD AND STRUCTURE TO PROVIDE INTEGRATED LONG CHANNEL VERTICAL FI...

METHOD FOR FORMING REPLACEMENT METAL GATE AND RELATED DEVICE

GATE STRUCTURES WITH LOW RESISTANCE

MEMORY CELL WITH ASYMMETRICAL TRANSISTOR, ASYMMETRICAL TRANSISTOR A...

SPACER INTEGRATION SCHEME FOR NFET AND PFET DEVICES

INTEGRATED CIRCUIT FABRICATION WITH BORON ETCH-STOP LAYER