Ya-Fen LIN

Person

Saratoga, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 11,950,412
- Issue date Apr 2, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 11,251,189
- Issue date Feb 15, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 10,297,606
- Issue date May 21, 2019
- Cypress Semiconductor Corporation
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of programming a continuous-channel flash memory device
- Patent number 9,892,790
- Issue date Feb 13, 2018
- Silicon Storage Technology, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 9,570,458
- Issue date Feb 14, 2017
- Cypress Semiconductor Corporation
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial local self boosting for NAND
- Patent number 9,514,824
- Issue date Dec 6, 2016
- Cypress Semiconductor Corporation
- Ya-Fen Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate NAND flash memory structure and array, method of program...
- Patent number 9,449,693
- Issue date Sep 20, 2016
- Silicon Storage Technology, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate NAND flash memory structure and array, method of program...
- Patent number 8,780,642
- Issue date Jul 15, 2014
- Silicon Storage Technology, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 8,692,310
- Issue date Apr 8, 2014
- Spansion LLC
- YouSeok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial local self boosting for NAND
- Patent number 8,638,609
- Issue date Jan 28, 2014
- Spansion LLC
- Ya-Fen Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-diffusion junction split-gate nonvolatile memory cells and arra...
- Patent number 8,164,135
- Issue date Apr 24, 2012
- Silicon Storage Technology, Inc.
- Changyuan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Partial local self-boosting of a memory cell channel
- Patent number 7,848,146
- Issue date Dec 7, 2010
- Spansion LLC
- Youseok Suh
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and apparatus for reading and programming a non-volatile mem...
- Patent number 7,826,267
- Issue date Nov 2, 2010
- Silicon Storage Technology, Inc.
- Jack Frayer
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate NAND flash memory structure and array, method of program...
- Patent number 7,808,839
- Issue date Oct 5, 2010
- Silicon Storage Technology, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of trimming semiconductor elements with electrical resistanc...
- Patent number 7,790,518
- Issue date Sep 7, 2010
- Silicon Storage Technology, Inc.
- Bomy Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-diffusion junction split-gate nonvolatile memory cells and arra...
- Patent number 7,723,774
- Issue date May 25, 2010
- Silicon Storage Technology, Inc.
- Changyuan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Bidirectional split gate NAND flash memory structure and array, met...
- Patent number 7,544,569
- Issue date Jun 9, 2009
- Silicon Storage Technology, Inc.
- Feng Gao
- G11 - INFORMATION STORAGE
Information Patent Grant
Word line voltage boosting circuit and a memory array incorporating...
- Patent number 7,403,418
- Issue date Jul 22, 2008
- Silicon Storage Technology, Inc.
- Ya-Fen Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of trimming semiconductor elements with electrical resistanc...
- Patent number 7,351,613
- Issue date Apr 1, 2008
- Silicon Storage Technology, Inc.
- Bomy Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional split gate NAND flash memory structure and array, met...
- Patent number 7,247,907
- Issue date Jul 24, 2007
- Silicon Storage Technology, Inc.
- Feng Gao
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate NAND flash memory structure and array, method of program...
- Patent number 7,242,051
- Issue date Jul 10, 2007
- Silicon Storage Technology, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Differential non-volatile content addressable memory cell and array...
- Patent number 7,050,316
- Issue date May 23, 2006
- Silicon Storage Technology, Inc.
- Ya-Fen Lin
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20220173116
- Publication date Jun 2, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20190319035
- Publication date Oct 17, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20170170187
- Publication date Jun 15, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split Gate NAND Flash Memory Structure And Array, Method Of Program...
- Publication number 20170032846
- Publication date Feb 2, 2017
- Silicon Storage Technology, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
Split Gate NAND Flash Memory Structure And Array, Method Of Program...
- Publication number 20140340967
- Publication date Nov 20, 2014
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
GATE FRINGINE EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20140159138
- Publication date Jun 12, 2014
- SPANSION LLC
- YouSeok SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL LOCAL SELF BOOSTING FOR NAND
- Publication number 20140104957
- Publication date Apr 17, 2014
- SPANSION LLC
- Ya-Fen LIN
- G11 - INFORMATION STORAGE
Information Patent Application
PARTIAL LOCAL SELF BOOSTING FOR NAND
- Publication number 20110286276
- Publication date Nov 24, 2011
- Ya-Fen LIN
- G11 - INFORMATION STORAGE
Information Patent Application
Split Gate NAND Flash Memory Structure and Array, Method of Program...
- Publication number 20100322015
- Publication date Dec 23, 2010
- Silicon Storage Technology, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
PARTIAL LOCAL SELF-BOOSTING OF A MEMORY CELL CHANNEL
- Publication number 20100238731
- Publication date Sep 23, 2010
- Youseok Suh
- G11 - INFORMATION STORAGE
Information Patent Application
NON-DIFFUSION JUNCTION SPLIT-GATE NONVOLATILE MEMORY CELLS AND ARRA...
- Publication number 20100220533
- Publication date Sep 2, 2010
- Changyuan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20100200904
- Publication date Aug 12, 2010
- YouSeok SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method And Apparatus For Reading And Programming A Non-Volatile Mem...
- Publication number 20090290430
- Publication date Nov 26, 2009
- Jack Frayer
- G11 - INFORMATION STORAGE
Information Patent Application
NON-DIFFUSION JUNCTION SPLIT-GATE NONVOLATILE MEMORY CELLS AND ARRA...
- Publication number 20090016113
- Publication date Jan 15, 2009
- Silicon Storage Technology, Inc.
- Changyuan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Method Of Trimming Semiconductor Elements With Electrical Resistanc...
- Publication number 20080131982
- Publication date Jun 5, 2008
- Bomy Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split gate NAND flash memory structure and array, method of program...
- Publication number 20070237005
- Publication date Oct 11, 2007
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
Word line voltage boosting circuit and a memory array incorporating...
- Publication number 20070076489
- Publication date Apr 5, 2007
- Ya-Fen Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Bidirectional split gate NAND flash memory structure and array, met...
- Publication number 20070020853
- Publication date Jan 25, 2007
- Silicon Storage Technology, Inc.
- Feng Gao
- G11 - INFORMATION STORAGE
Information Patent Application
BIDIRECTIONAL SPLIT GATE NAND FLASH MEMORY STRUCTURE AND ARRAY, MET...
- Publication number 20060273378
- Publication date Dec 7, 2006
- Feng Gao
- G11 - INFORMATION STORAGE
Information Patent Application
Split gate NAND flash memory structure and array, method of program...
- Publication number 20060261399
- Publication date Nov 23, 2006
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
Method of trimming semiconductor elements with electrical resistanc...
- Publication number 20060094197
- Publication date May 4, 2006
- Bomy Chen
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Gate fringing effect based channel formation for semiconductor device

Gate fringing effect based channel formation for semiconductor device

Gate fringing effect based channel formation for semiconductor device

Method of programming a continuous-channel flash memory device

Gate fringing effect based channel formation for semiconductor device

Partial local self boosting for NAND

Split gate NAND flash memory structure and array, method of program...

Split gate NAND flash memory structure and array, method of program...

Gate fringing effect based channel formation for semiconductor device

Partial local self boosting for NAND

Non-diffusion junction split-gate nonvolatile memory cells and arra...

Partial local self-boosting of a memory cell channel

Method and apparatus for reading and programming a non-volatile mem...

Split gate NAND flash memory structure and array, method of program...

Method of trimming semiconductor elements with electrical resistanc...

Non-diffusion junction split-gate nonvolatile memory cells and arra...

Bidirectional split gate NAND flash memory structure and array, met...

Word line voltage boosting circuit and a memory array incorporating...

Method of trimming semiconductor elements with electrical resistanc...

Bidirectional split gate NAND flash memory structure and array, met...

Split gate NAND flash memory structure and array, method of program...

Differential non-volatile content addressable memory cell and array...

Patents Applicationslast 30 patents

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

Split Gate NAND Flash Memory Structure And Array, Method Of Program...

Split Gate NAND Flash Memory Structure And Array, Method Of Program...

GATE FRINGINE EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

PARTIAL LOCAL SELF BOOSTING FOR NAND

PARTIAL LOCAL SELF BOOSTING FOR NAND

Split Gate NAND Flash Memory Structure and Array, Method of Program...

PARTIAL LOCAL SELF-BOOSTING OF A MEMORY CELL CHANNEL

NON-DIFFUSION JUNCTION SPLIT-GATE NONVOLATILE MEMORY CELLS AND ARRA...

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

Method And Apparatus For Reading And Programming A Non-Volatile Mem...

NON-DIFFUSION JUNCTION SPLIT-GATE NONVOLATILE MEMORY CELLS AND ARRA...

Method Of Trimming Semiconductor Elements With Electrical Resistanc...

Split gate NAND flash memory structure and array, method of program...

Word line voltage boosting circuit and a memory array incorporating...

Bidirectional split gate NAND flash memory structure and array, met...

BIDIRECTIONAL SPLIT GATE NAND FLASH MEMORY STRUCTURE AND ARRAY, MET...

Split gate NAND flash memory structure and array, method of program...

Method of trimming semiconductor elements with electrical resistanc...