Yanfeng Wang

Person

Beacon, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Replacement gate MOSFET with a high performance gate electrode
- Patent number 9,337,289
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k metal gate device structure for human blood gas sensing
- Patent number 9,322,799
- Issue date Apr 26, 2016
- International Business Machines Corporation
- Chen Shi
- G01 - MEASURING TESTING
Information Patent Grant
Partially-blocked well implant to improve diode ideality with SiGe...
- Patent number 9,312,358
- Issue date Apr 12, 2016
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k metal gate device structure for human blood gas sensing
- Patent number 9,297,780
- Issue date Mar 29, 2016
- International Business Machines Corporation
- Chen Shi
- G01 - MEASURING TESTING
Information Patent Grant
Work function adjustment by carbon implant in semiconductor devices...
- Patent number 9,252,146
- Issue date Feb 2, 2016
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially-blocked well implant to improve diode ideality with SiGe...
- Patent number 9,252,234
- Issue date Feb 2, 2016
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure and method to adjust threshold voltage in a FinFET...
- Patent number 9,171,954
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES U.S. 2 LLC
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator device including stand-alone well implan...
- Patent number 9,105,725
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator device including stand-alone well implan...
- Patent number 9,059,291
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Concurrently forming nFET and pFET gate dielectric layers
- Patent number 9,059,315
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment for thin body MOSFETs
- Patent number 9,040,399
- Issue date May 26, 2015
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for dielectric isolation in a fin field effect...
- Patent number 9,034,715
- Issue date May 19, 2015
- International Business Machines Corporation
- Yanfeng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip poly-to-contact process monitoring and reliability evaluati...
- Patent number 9,029,172
- Issue date May 12, 2015
- International Business Machines Corporation
- Fen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite high-k gate dielectric stack for reducing gate leakage
- Patent number 9,029,959
- Issue date May 12, 2015
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate MOSFET with a high performance gate electrode
- Patent number 8,969,933
- Issue date Mar 3, 2015
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure and method to adjust threshold voltage in a FinFET...
- Patent number 8,932,949
- Issue date Jan 13, 2015
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure incorporating a contact sidewall spacer wit...
- Patent number 8,847,401
- Issue date Sep 30, 2014
- International Business Machines Corporation
- Fen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure and method to adjust threshold voltage in a FinFET...
- Patent number 8,772,149
- Issue date Jul 8, 2014
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable FETs using Vt-shift effect and methods of manufacture
- Patent number 8,766,378
- Issue date Jul 1, 2014
- International Business Machines Corporation
- Eduard A. Cartier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistor device and fabrication
- Patent number 8,742,475
- Issue date Jun 3, 2014
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device and fabrication
- Patent number 8,736,023
- Issue date May 27, 2014
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment by carbon implant in semiconductor devices...
- Patent number 8,729,637
- Issue date May 20, 2014
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate MOSFET with a high performance gate electrode
- Patent number 8,592,266
- Issue date Nov 26, 2013
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to improve threshold voltage of MOSFETs includ...
- Patent number 8,513,085
- Issue date Aug 20, 2013
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable FETs using Vt-shift effect and methods of manufacture
- Patent number 8,492,247
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Eduard A. Cartier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Interface structure for channel mobility improvement in high-k meta...
- Patent number 8,492,852
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact combined with a replacement metal gate/high-K...
- Patent number 8,481,415
- Issue date Jul 9, 2013
- International Business Machines Corporation
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device and fabrication
- Patent number 8,435,878
- Issue date May 7, 2013
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to improve threshold voltage of MOSFETS includ...
- Patent number 8,173,531
- Issue date May 8, 2012
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate method
- Patent number 8,084,346
- Issue date Dec 27, 2011
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE
- Publication number 20150137269
- Publication date May 21, 2015
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR DEVICE INCLUDING STAND-ALONE WELL IMPLAN...
- Publication number 20150072481
- Publication date Mar 12, 2015
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR DEVICE INCLUDING STAND-ALONE WELL IMPLAN...
- Publication number 20150069513
- Publication date Mar 12, 2015
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET...
- Publication number 20150054093
- Publication date Feb 26, 2015
- International Business Machines Corporation
- Eduard A. CARTIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE DEVICE STRUCTURE FOR HUMAN BLOOD GAS SENSING
- Publication number 20140299922
- Publication date Oct 9, 2014
- International Business Machines Corporation
- CHEN SHI
- G01 - MEASURING TESTING
Information Patent Application
HIGH-K METAL GATE DEVICE STRUCTURE FOR HUMAN BLOOD GAS SENSING
- Publication number 20140300340
- Publication date Oct 9, 2014
- International Business Machines Corporation
- CHEN SHI
- G01 - MEASURING TESTING
Information Patent Application
METHOD AND STRUCTURE FOR DIELECTRIC ISOLATION IN A FIN FIELD EFFECT...
- Publication number 20140264591
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Yanfeng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT BY CARBON IMPLANT IN SEMICONDUCTOR DEVICES...
- Publication number 20140246727
- Publication date Sep 4, 2014
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET...
- Publication number 20140217504
- Publication date Aug 7, 2014
- International Business Machines Corporation
- Eduard A. CARTIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Concurrently Forming nFET and pFET Gate Dielectric Layers
- Publication number 20140187028
- Publication date Jul 3, 2014
- GLOBALFOUNDRIES INC.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCORPORATING A CONTACT SIDEWALL SPACER WIT...
- Publication number 20140117420
- Publication date May 1, 2014
- International Business Machines Corporation
- Fen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY-BLOCKED WELL IMPLANT TO IMPROVE DIODE IDEALITY WITH SiGe...
- Publication number 20140061857
- Publication date Mar 6, 2014
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY-BLOCKED WELL IMPLANT TO IMPROVE DIODE IDEALITY WITH SiGe...
- Publication number 20140065807
- Publication date Mar 6, 2014
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE HIGH-K GATE DIELECTRIC STACK FOR REDUCING GATE LEAKAGE
- Publication number 20140001570
- Publication date Jan 2, 2014
- GLOBALFOUNDRIES INC.
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ON-CHIP POLY-TO-CONTACT PROCESS MONITORING AND RELIABILITY EVALUATI...
- Publication number 20130191047
- Publication date Jul 25, 2013
- International Business Machines Corporation
- Fen CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE
- Publication number 20130187244
- Publication date Jul 25, 2013
- International Business Machines Corporation
- Eduard A. CARTIER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE
- Publication number 20130175641
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE AND FABRICATION
- Publication number 20130171813
- Publication date Jul 4, 2013
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Adjustment For Thin Body Mosfets
- Publication number 20130105896
- Publication date May 2, 2013
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT FOR THIN BODY MOSFETS
- Publication number 20130105894
- Publication date May 2, 2013
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET...
- Publication number 20130099313
- Publication date Apr 25, 2013
- International Business Machines Corporation
- Eduard A. CARTIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Work Function Adjustment By Carbon Implant In Semiconductor Devices...
- Publication number 20130087859
- Publication date Apr 11, 2013
- International Business Machines Corporation
- Yue Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Device and Fabrication
- Publication number 20120286366
- Publication date Nov 15, 2012
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO IMPROVE THRESHOLD VOLTAGE OF MOSFETS INCLUD...
- Publication number 20120168874
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT COMBINED WITH A REPLACEMENT METAL GATE/HIGH-K...
- Publication number 20120139062
- Publication date Jun 7, 2012
- International Business Machines Corporation
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE
- Publication number 20120104469
- Publication date May 3, 2012
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE
- Publication number 20120043622
- Publication date Feb 23, 2012
- International Business Machines Corporation
- Eduard A. CARTIER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTERFACE STRUCTURE FOR CHANNEL MOBILITY IMPROVEMENT IN HIGH-K META...
- Publication number 20110298060
- Publication date Dec 8, 2011
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Device and Fabrication
- Publication number 20110241120
- Publication date Oct 6, 2011
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO IMPROVE THRESHOLD VOLTAGE OF MOSFETS INCLUD...
- Publication number 20110031554
- Publication date Feb 10, 2011
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS

Yanfeng Wang

Person

Patents Grantslast 30 patents

Replacement gate MOSFET with a high performance gate electrode

High-k metal gate device structure for human blood gas sensing

Partially-blocked well implant to improve diode ideality with SiGe...

High-k metal gate device structure for human blood gas sensing

Work function adjustment by carbon implant in semiconductor devices...

Partially-blocked well implant to improve diode ideality with SiGe...

FinFET structure and method to adjust threshold voltage in a FinFET...

Semiconductor-on-insulator device including stand-alone well implan...

Semiconductor-on-insulator device including stand-alone well implan...

Concurrently forming nFET and pFET gate dielectric layers

Threshold voltage adjustment for thin body MOSFETs

Method and structure for dielectric isolation in a fin field effect...

On-chip poly-to-contact process monitoring and reliability evaluati...

Composite high-k gate dielectric stack for reducing gate leakage

Replacement gate MOSFET with a high performance gate electrode

FinFET structure and method to adjust threshold voltage in a FinFET...

Semiconductor structure incorporating a contact sidewall spacer wit...

FinFET structure and method to adjust threshold voltage in a FinFET...

Programmable FETs using Vt-shift effect and methods of manufacture

Field effect transistor device and fabrication

Field effect transistor device and fabrication

Work function adjustment by carbon implant in semiconductor devices...

Replacement gate MOSFET with a high performance gate electrode

Structure and method to improve threshold voltage of MOSFETs includ...

Programmable FETs using Vt-shift effect and methods of manufacture

Interface structure for channel mobility improvement in high-k meta...

Self-aligned contact combined with a replacement metal gate/high-K...

Field effect transistor device and fabrication

Structure and method to improve threshold voltage of MOSFETS includ...

Replacement metal gate method

Patents Applicationslast 30 patents

REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE

SEMICONDUCTOR-ON-INSULATOR DEVICE INCLUDING STAND-ALONE WELL IMPLAN...

SEMICONDUCTOR-ON-INSULATOR DEVICE INCLUDING STAND-ALONE WELL IMPLAN...

FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET...

HIGH-K METAL GATE DEVICE STRUCTURE FOR HUMAN BLOOD GAS SENSING

HIGH-K METAL GATE DEVICE STRUCTURE FOR HUMAN BLOOD GAS SENSING

METHOD AND STRUCTURE FOR DIELECTRIC ISOLATION IN A FIN FIELD EFFECT...

WORK FUNCTION ADJUSTMENT BY CARBON IMPLANT IN SEMICONDUCTOR DEVICES...

FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET...

Concurrently Forming nFET and pFET Gate Dielectric Layers

SEMICONDUCTOR STRUCTURE INCORPORATING A CONTACT SIDEWALL SPACER WIT...

PARTIALLY-BLOCKED WELL IMPLANT TO IMPROVE DIODE IDEALITY WITH SiGe...

PARTIALLY-BLOCKED WELL IMPLANT TO IMPROVE DIODE IDEALITY WITH SiGe...

COMPOSITE HIGH-K GATE DIELECTRIC STACK FOR REDUCING GATE LEAKAGE

ON-CHIP POLY-TO-CONTACT PROCESS MONITORING AND RELIABILITY EVALUATI...

PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE

REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE

FIELD EFFECT TRANSISTOR DEVICE AND FABRICATION

Threshold Voltage Adjustment For Thin Body Mosfets

THRESHOLD VOLTAGE ADJUSTMENT FOR THIN BODY MOSFETS

FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET...

Work Function Adjustment By Carbon Implant In Semiconductor Devices...

Field Effect Transistor Device and Fabrication

STRUCTURE AND METHOD TO IMPROVE THRESHOLD VOLTAGE OF MOSFETS INCLUD...

SELF-ALIGNED CONTACT COMBINED WITH A REPLACEMENT METAL GATE/HIGH-K...

REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE

PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE

INTERFACE STRUCTURE FOR CHANNEL MOBILITY IMPROVEMENT IN HIGH-K META...

Field Effect Transistor Device and Fabrication

STRUCTURE AND METHOD TO IMPROVE THRESHOLD VOLTAGE OF MOSFETS INCLUD...