Yang Gao

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Split gate semiconductor device with curved gate oxide profile
- Patent number 9,893,168
- Issue date Feb 13, 2018
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction trench power MOSFET device fabrication
- Patent number 9,443,974
- Issue date Sep 13, 2016
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures of and methods of fabricating split gate MIS devices
- Patent number 9,425,305
- Issue date Aug 23, 2016
- Vishay Siliconix
- Kyle Terrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction trench power MOSFET devices
- Patent number 9,425,306
- Issue date Aug 23, 2016
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate semiconductor device with curved gate oxide profile
- Patent number 9,419,129
- Issue date Aug 16, 2016
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE
- Publication number 20160359018
- Publication date Dec 8, 2016
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR
- Publication number 20120220092
- Publication date Aug 30, 2012
- VISHAY-SILICONIX
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SPLIT GATE SEMICONDUCTOR
- Publication number 20120211828
- Publication date Aug 23, 2012
- VISHAY-SILICONIX
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES OF AND METHODS OF FABRICATING SPLIT GATE MIS DEVICES
- Publication number 20110210406
- Publication date Sep 1, 2011
- VISHAY-SILICONIX
- Kyle Terrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE
- Publication number 20110089485
- Publication date Apr 21, 2011
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION TRENCH POWER MOSFET DEVICES
- Publication number 20110049614
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION TRENCH POWER MOSFET DEVICE FABRICATION
- Publication number 20110053326
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Split gate semiconductor device with curved gate oxide profile

Super junction trench power MOSFET device fabrication

Structures of and methods of fabricating split gate MIS devices

Super junction trench power MOSFET devices

Split gate semiconductor device with curved gate oxide profile

Patents Applicationslast 30 patents

SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE

METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR

HYBRID SPLIT GATE SEMICONDUCTOR

STRUCTURES OF AND METHODS OF FABRICATING SPLIT GATE MIS DEVICES

SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE

SUPER JUNCTION TRENCH POWER MOSFET DEVICES

SUPER JUNCTION TRENCH POWER MOSFET DEVICE FABRICATION