Yangyuan Wang

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Short-gate tunneling field effect transistor having non-uniformly d...
- Patent number 9,508,839
- Issue date Nov 29, 2016
- Peking University
- Ru Huang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunneling field effect transistor having a three-side source and fa...
- Patent number 9,490,363
- Issue date Nov 8, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory and method for fabricating the same
- Patent number 9,214,629
- Issue date Dec 15, 2015
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-adaptive composite tunneling field effect transistor and metho...
- Patent number 9,171,944
- Issue date Oct 27, 2015
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable array of silicon nanowire field effect transistor and...
- Patent number 9,099,500
- Issue date Aug 4, 2015
- Peking University
- Ru Huang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Strip-shaped gate tunneling field effect transistor with double-dif...
- Patent number 9,054,075
- Issue date Jun 9, 2015
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for testing density and location of gate dielectric layer tr...
- Patent number 9,018,968
- Issue date Apr 28, 2015
- Peking University
- Ru Huang
- G01 - MEASURING TESTING
Information Patent Grant
Strip-shaped gate-modulated tunneling field effect transistor and a...
- Patent number 8,981,421
- Issue date Mar 17, 2015
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating complementary tunneling field effect transis...
- Patent number 8,921,174
- Issue date Dec 30, 2014
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunneling current amplification transistor
- Patent number 8,895,980
- Issue date Nov 25, 2014
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for testing trap density of gate dielectric layer in semicon...
- Patent number 8,866,507
- Issue date Oct 21, 2014
- Peking University
- Ru Huang
- G01 - MEASURING TESTING
Information Patent Grant
MOS transistor having combined-source structure with low power cons...
- Patent number 8,710,557
- Issue date Apr 29, 2014
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive-switching memory and fabrication method thereof
- Patent number 8,513,639
- Issue date Aug 20, 2013
- Peking University
- Yimao Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined-source MOS transistor with comb-shaped gate, and method fo...
- Patent number 8,507,959
- Issue date Aug 13, 2013
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating high aspect ratio MEMS device with integrate...
- Patent number 7,618,837
- Issue date Nov 17, 2009
- Peking University
- Guizhen Yan
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
CIRCUIT FOR EXTRACTING FEATURES, NEURAL NETWORK AND SIGNAL PROCESSI...
- Publication number 20220351017
- Publication date Nov 3, 2022
- HANG ZHOU NANO CORE CHIP ELECTRONIC TECHNOLOGY CO., LTD
- Le Ye
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
A METHOD OF INHIBITING LEAKAGE CURRENT OF TUNNELING TRANSISTOR, AND...
- Publication number 20160133695
- Publication date May 12, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A JUNCTION-MODULATED TUNNELING FIELD EFFECT TRANSISTOR AND A FABRIC...
- Publication number 20160079400
- Publication date Mar 17, 2016
- Peking University
- Ru HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNELING FIELD EFFECT TRANSISTOR HAVING A THREE-SIDE SOURCE AND FA...
- Publication number 20160043220
- Publication date Feb 11, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRIP-SHAPED GATE TUNNELING FIELD EFFECT TRANSISTOR USING COMPOSITE...
- Publication number 20160035889
- Publication date Feb 4, 2016
- Peking University
- Ru HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Short-Gate Tunneling Field Effect Transistor Having Non-Uniformly D...
- Publication number 20160020306
- Publication date Jan 21, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ADAPTIVE COMPOSITE TUNNELING FIELD EFFECT TRANSISTOR AND METHO...
- Publication number 20150236139
- Publication date Aug 20, 2015
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRIP-SHAPED GATE TUNNELING FIELD EFFECT TRANSISTOR WITH DOUBLE-DIF...
- Publication number 20150048313
- Publication date Feb 19, 2015
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY AND METHOD FOR FABRICATING THE SAME
- Publication number 20140306173
- Publication date Oct 16, 2014
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING COMPLEMENTARY TUNNELING FIELD EFFECT TRANSIS...
- Publication number 20140220748
- Publication date Aug 7, 2014
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A STRIP-SHAPED GATE-MODULATED TUNNELING FIELD EFFECT TRANSISTOR AND...
- Publication number 20140203324
- Publication date Jul 24, 2014
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR TESTING DENSITY AND LOCATION OF GATE DIELECTRIC LAYER TR...
- Publication number 20130214810
- Publication date Aug 22, 2013
- Peking University
- Ru Huang
- G01 - MEASURING TESTING
Information Patent Application
PROGRAMMABLE ARRAY OF SILICON NANOWIRE FIELD EFFECT TRANSISTOR AND...
- Publication number 20130075701
- Publication date Mar 28, 2013
- Peking University
- Ru Huang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MOS Transistor Having Combined-Source Structure With Low Power Cons...
- Publication number 20120313154
- Publication date Dec 13, 2012
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNELING CURRENT AMPLIFICATION TRANSISTOR
- Publication number 20120267700
- Publication date Oct 25, 2012
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive-Switching Memory and Fabrication Method Thereof
- Publication number 20120241712
- Publication date Sep 27, 2012
- Yimao Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-POWER CONSUMPTION TUNNELING FIELD-EFFECT TRANSISTOR WITH FINGER...
- Publication number 20120223361
- Publication date Sep 6, 2012
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR TESTING TRAP DENSITY OF GATE DIELECTRIC LAYER IN SEMICON...
- Publication number 20120187976
- Publication date Jul 26, 2012
- Peking University
- Ru Huang
- G01 - MEASURING TESTING
Information Patent Application
Resistive Field Effect Transistor Having an Ultra-Steep Subthreshol...
- Publication number 20120181584
- Publication date Jul 19, 2012
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Combined-source Mos Transistor with Comb-shaped Gate, and Method fo...
- Publication number 20120181585
- Publication date Jul 19, 2012
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating high aspect ratio MEMS device with integrate...
- Publication number 20050287760
- Publication date Dec 29, 2005
- Peking University
- Guizhen Yan
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Yangyuan Wang

Person

Patents Grantslast 30 patents

Short-gate tunneling field effect transistor having non-uniformly d...

Tunneling field effect transistor having a three-side source and fa...

Resistive memory and method for fabricating the same

Self-adaptive composite tunneling field effect transistor and metho...

Programmable array of silicon nanowire field effect transistor and...

Strip-shaped gate tunneling field effect transistor with double-dif...

Method for testing density and location of gate dielectric layer tr...

Strip-shaped gate-modulated tunneling field effect transistor and a...

Method for fabricating complementary tunneling field effect transis...

Tunneling current amplification transistor

Method for testing trap density of gate dielectric layer in semicon...

MOS transistor having combined-source structure with low power cons...

Resistive-switching memory and fabrication method thereof

Combined-source MOS transistor with comb-shaped gate, and method fo...

Method for fabricating high aspect ratio MEMS device with integrate...

Patents Applicationslast 30 patents

CIRCUIT FOR EXTRACTING FEATURES, NEURAL NETWORK AND SIGNAL PROCESSI...

A METHOD OF INHIBITING LEAKAGE CURRENT OF TUNNELING TRANSISTOR, AND...

A JUNCTION-MODULATED TUNNELING FIELD EFFECT TRANSISTOR AND A FABRIC...

TUNNELING FIELD EFFECT TRANSISTOR HAVING A THREE-SIDE SOURCE AND FA...

STRIP-SHAPED GATE TUNNELING FIELD EFFECT TRANSISTOR USING COMPOSITE...

Short-Gate Tunneling Field Effect Transistor Having Non-Uniformly D...

SELF-ADAPTIVE COMPOSITE TUNNELING FIELD EFFECT TRANSISTOR AND METHO...

STRIP-SHAPED GATE TUNNELING FIELD EFFECT TRANSISTOR WITH DOUBLE-DIF...

RESISTIVE MEMORY AND METHOD FOR FABRICATING THE SAME

METHOD FOR FABRICATING COMPLEMENTARY TUNNELING FIELD EFFECT TRANSIS...

A STRIP-SHAPED GATE-MODULATED TUNNELING FIELD EFFECT TRANSISTOR AND...

METHOD FOR TESTING DENSITY AND LOCATION OF GATE DIELECTRIC LAYER TR...

PROGRAMMABLE ARRAY OF SILICON NANOWIRE FIELD EFFECT TRANSISTOR AND...

MOS Transistor Having Combined-Source Structure With Low Power Cons...

TUNNELING CURRENT AMPLIFICATION TRANSISTOR

Resistive-Switching Memory and Fabrication Method Thereof

LOW-POWER CONSUMPTION TUNNELING FIELD-EFFECT TRANSISTOR WITH FINGER...

METHOD FOR TESTING TRAP DENSITY OF GATE DIELECTRIC LAYER IN SEMICON...

Resistive Field Effect Transistor Having an Ultra-Steep Subthreshol...

Combined-source Mos Transistor with Comb-shaped Gate, and Method fo...

Method for fabricating high aspect ratio MEMS device with integrate...