Yanjun Ma

Person

Seattle, WA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit metal oxide semiconductor transistor
- Patent number 6,759,695
- Issue date Jul 6, 2004
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFMOS capacitors with high dielectric constant materials
- Patent number 6,716,645
- Issue date Apr 6, 2004
- Sharp Laboratories of America, Inc.
- Tingkai Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of making a sub-micron MOS transistor
- Patent number 6,632,731
- Issue date Oct 14, 2003
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a multilayer dielectric stack
- Patent number 6,627,503
- Issue date Sep 30, 2003
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-germanium MOSFET with deposited gate dielectric and metal g...
- Patent number 6,620,664
- Issue date Sep 16, 2003
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate CMOS devices and method for making the same
- Patent number 6,573,134
- Issue date Jun 3, 2003
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making MFMOS capacitors with high dielectric constant mat...
- Patent number 6,503,763
- Issue date Jan 7, 2003
- Sharp Laboratories of America, Inc.
- Tingkai Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single c-axis PGO thin film on ZrO2 for non-volatile memory applica...
- Patent number 6,441,417
- Issue date Aug 27, 2002
- Sharp Laboratories of America, Inc.
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming conducting diffusion barriers
- Patent number 6,410,383
- Issue date Jun 25, 2002
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer dielectric stack and method
- Patent number 6,407,435
- Issue date Jun 18, 2002
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a low leakage dynamic threshold voltage MOS (DTMOS...
- Patent number 6,406,947
- Issue date Jun 18, 2002
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dose control technique for plasma doping in ultra-shallow junction...
- Patent number 6,403,453
- Issue date Jun 11, 2002
- Sharp Laboratories of America, Inc.
- Yoshi Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving electrical properties of high dielectric const...
- Patent number 6,348,373
- Issue date Feb 19, 2002
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped zirconia, or zirconia-like, dielectric film transistor struct...
- Patent number 6,297,539
- Issue date Oct 2, 2001
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a doped metal oxide dielectric film
- Patent number 6,207,589
- Issue date Mar 27, 2001
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of silicon germanium and other alloys as the replacement gate f...
- Patent number 6,200,866
- Issue date Mar 13, 2001
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-loaded film and method for same
- Patent number 6,184,157
- Issue date Feb 6, 2001
- Sharp Laboratories of America, Inc.
- Sheng Teng Hsu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming nitrogen implanted ultrathin gate oxide for dual...
- Patent number 6,184,110
- Issue date Feb 6, 2001
- Sharp Laboratories of America, Inc.
- Yoshi Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum-doped zirconium dielectric film transistor structure and d...
- Patent number 6,060,755
- Issue date May 9, 2000
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Integrated circuit metal oxide semiconductor transistor
- Publication number 20040077136
- Publication date Apr 22, 2004
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sub-micron MOS transistor
- Publication number 20040014292
- Publication date Jan 22, 2004
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual metal gate CMOS devices
- Publication number 20030205767
- Publication date Nov 6, 2003
- Sharp Laboratories of America, Inc.
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-GERMANIUM MOSFET WITH DEPOSITED GATE DIELECTRIC AND METAL G...
- Publication number 20030146428
- Publication date Aug 7, 2003
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MFMOS capacitors with high dielectric constant materials
- Publication number 20030119242
- Publication date Jun 26, 2003
- Sharp Laboratories of America, Inc.
- Tingkai Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making single c-axis PGO thin film on ZrO2 for non-volati...
- Publication number 20020142536
- Publication date Oct 3, 2002
- Fengyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual metal gate CMOS devices and method for making the same
- Publication number 20020140036
- Publication date Oct 3, 2002
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MFMOS capacitors with high dielectric constant materials and a meth...
- Publication number 20020142487
- Publication date Oct 3, 2002
- Tingkai Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a multilayer dielectric stack
- Publication number 20020130340
- Publication date Sep 19, 2002
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A LOW LEAKAGE DYNAMIC THRESHOLD VOLTAGE MOS (DTMOS...
- Publication number 20020076887
- Publication date Jun 20, 2002
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method of making a sub-micron MOS transistor
- Publication number 20010009784
- Publication date Jul 26, 2001
- Yanjun Ma
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Integrated circuit metal oxide semiconductor transistor

MFMOS capacitors with high dielectric constant materials

Structure and method of making a sub-micron MOS transistor

Method of forming a multilayer dielectric stack

Silicon-germanium MOSFET with deposited gate dielectric and metal g...

Dual metal gate CMOS devices and method for making the same

Method of making MFMOS capacitors with high dielectric constant mat...

Single c-axis PGO thin film on ZrO2 for non-volatile memory applica...

Method of forming conducting diffusion barriers

Multilayer dielectric stack and method

Method of making a low leakage dynamic threshold voltage MOS (DTMOS...

Dose control technique for plasma doping in ultra-shallow junction...

Method for improving electrical properties of high dielectric const...

Doped zirconia, or zirconia-like, dielectric film transistor struct...

Method of forming a doped metal oxide dielectric film

Use of silicon germanium and other alloys as the replacement gate f...

Stress-loaded film and method for same

Method of forming nitrogen implanted ultrathin gate oxide for dual...

Aluminum-doped zirconium dielectric film transistor structure and d...

Patents Applicationslast 30 patents

Integrated circuit metal oxide semiconductor transistor

Sub-micron MOS transistor

Dual metal gate CMOS devices

SILICON-GERMANIUM MOSFET WITH DEPOSITED GATE DIELECTRIC AND METAL G...

MFMOS capacitors with high dielectric constant materials

Method of making single c-axis PGO thin film on ZrO2 for non-volati...

Dual metal gate CMOS devices and method for making the same

MFMOS capacitors with high dielectric constant materials and a meth...

Method of forming a multilayer dielectric stack

METHOD OF MAKING A LOW LEAKAGE DYNAMIC THRESHOLD VOLTAGE MOS (DTMOS...

Structure and method of making a sub-micron MOS transistor