Yanning Sun

Person

Scarsdale, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
III-V transistor device with self-aligned doped bottom barrier
- Patent number 10,937,871
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low external resistance channels in III-V semiconductor devices
- Patent number 10,622,207
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V MOSFET with self-aligned diffusion barrier
- Patent number 10,128,343
- Issue date Nov 13, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned heterojunction field effect transistor
- Patent number 10,115,833
- Issue date Oct 30, 2018
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V field effect transistor on a dielectric layer
- Patent number 10,014,377
- Issue date Jul 3, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of low defect density of III-V on Si for device fabrica...
- Patent number 9,984,873
- Issue date May 29, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V MOSFET with self-aligned diffusion barrier
- Patent number 9,947,755
- Issue date Apr 17, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V transistor device with self-aligned doped bottom barrier
- Patent number 9,941,363
- Issue date Apr 10, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar III-V field effect transistor (FET) on dielectric layer
- Patent number 9,882,021
- Issue date Jan 30, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V MOSFET with self-aligned diffusion barrier
- Patent number 9,853,109
- Issue date Dec 26, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low external resistance channels in III-V semiconductor devices
- Patent number 9,812,323
- Issue date Nov 7, 2017
- Internaitonal Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor lateral sidewall growth from a semiconductor pillar
- Patent number 9,793,405
- Issue date Oct 17, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric III-V MOSFET on silicon substrate
- Patent number 9,773,903
- Issue date Sep 26, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned heterojunction field effect transistor
- Patent number 9,741,871
- Issue date Aug 22, 2017
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced current leakage semiconductor device
- Patent number 9,722,031
- Issue date Aug 1, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for CMP-free III-V isolation
- Patent number 9,711,648
- Issue date Jul 18, 2017
- GLOBALFOUNDRIES Inc.
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V field effect transistor on a dielectric layer
- Patent number 9,704,958
- Issue date Jul 11, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor device having self-aligned contacts
- Patent number 9,666,684
- Issue date May 30, 2017
- GLOBALFOUNDRIES Inc.
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced current leakage semiconductor device
- Patent number 9,627,482
- Issue date Apr 18, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-semiconductor complementary metal-oxide-semiconductor device
- Patent number 9,627,266
- Issue date Apr 18, 2017
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K spacer for extension-free CMOS devices with high mobility ch...
- Patent number 9,608,066
- Issue date Mar 28, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of low defect density of III-V on Si for device fabrica...
- Patent number 9,570,296
- Issue date Feb 14, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric III-V MOSFET on silicon substrate
- Patent number 9,553,166
- Issue date Jan 24, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of low defect density of III-V on Si for device fabrica...
- Patent number 9,508,550
- Issue date Nov 29, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple via structure and method
- Patent number 9,508,640
- Issue date Nov 29, 2016
- GLOBALFOUNDRIES, INC.
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-semiconductor complementary metal-oxide-semiconductor device
- Patent number 9,437,614
- Issue date Sep 6, 2016
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced current leakage semiconductor device
- Patent number 9,397,161
- Issue date Jul 19, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar semiconductor growth on III-V material
- Patent number 9,337,281
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor device having self-aligned contacts
- Patent number 9,324,853
- Issue date Apr 26, 2016
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar III-V field effect transistor (FET) on dielectric layer
- Patent number 9,287,115
- Issue date Mar 15, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GUIDING STRUCTURES FOR FABRICATION OF ANGLED FEATURES IN A SEMICOND...
- Publication number 20240319591
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Steven Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF ANGLED MANDREL STRUCTURES IN SEMICONDUCTOR DEVICE
- Publication number 20240319584
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
III-V MOSFET WITH SELF-ALIGNED DIFFUSION BARRIER
- Publication number 20180197961
- Publication date Jul 12, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V TRANSISTOR DEVICE WITH SELF-ALIGNED DOPED BOTTOM BARRIER
- Publication number 20180151674
- Publication date May 31, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW EXTERNAL RESISTANCE CHANNELS IN III-V SEMICONDUCTOR DEVICES
- Publication number 20180053650
- Publication date Feb 22, 2018
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LATERAL SIDEWALL GROWTH FROM A SEMICONDUCTOR PILLAR
- Publication number 20170271500
- Publication date Sep 21, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED HETEROJUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20170229588
- Publication date Aug 10, 2017
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V FIELD EFFECT TRANSISTOR ON A DIELECTRIC LAYER
- Publication number 20170179238
- Publication date Jun 22, 2017
- International Business Machines Corporation
- CHENG-WEI CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V TRANSISTOR DEVICE WITH DOPED BOTTOM BARRIER
- Publication number 20170179232
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V TRANSISTOR DEVICE WITH SELF-ALIGNED DOPED BOTTOM BARRIER
- Publication number 20170179288
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V FIELD EFFECT TRANSISTOR ON A DIELECTRIC LAYER
- Publication number 20170179237
- Publication date Jun 22, 2017
- International Business Machines Corporation
- CHENG-WEI CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED HETEROJUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20170125607
- Publication date May 4, 2017
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V MOSFET WITH SELF-ALIGNED DIFFUSION BARRIER
- Publication number 20170092722
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K SPACER FOR EXTENSION-FREE CMOS DEVICES WITH HIGH MOBILITY CH...
- Publication number 20170092723
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V MOSFET WITH SELF-ALIGNED DIFFUSION BARRIER
- Publication number 20170092727
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC III-V MOSFET ON SILICON SUBSTRATE
- Publication number 20170092763
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-SEMICONDUCTOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE
- Publication number 20170084497
- Publication date Mar 23, 2017
- International Business Machines Corporation
- Sanghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREPARATION OF LOW DEFECT DENSITY OF III-V ON SI FOR DEVICE FABRICA...
- Publication number 20170025504
- Publication date Jan 26, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREPARATION OF LOW DEFECT DENSITY OF III-V ON SI FOR DEVICE FABRICA...
- Publication number 20160322223
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREPARATION OF LOW DEFECT DENSITY OF III-V ON SI FOR DEVICE FABRICA...
- Publication number 20160322222
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CURRENT LEAKAGE SEMICONDUCTOR DEVICE
- Publication number 20160254193
- Publication date Sep 1, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CURRENT LEAKAGE SEMICONDUCTOR DEVICE
- Publication number 20160254352
- Publication date Sep 1, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR III-V FIELD EFFECT TRANSISTOR (FET) ON DIELECTRIC LAYER
- Publication number 20160172465
- Publication date Jun 16, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW EXTERNAL RESISTANCE CHANNELS IN III-V SEMICONDUCTOR DEVICES
- Publication number 20160071968
- Publication date Mar 10, 2016
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACTS
- Publication number 20150325650
- Publication date Nov 12, 2015
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR SEMICONDUCTOR GROWTH ON III-V MATERIAL
- Publication number 20150325682
- Publication date Nov 12, 2015
- GLOBALFOUNDRIES INC.
- CHENG-WEI CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR III-V FIELD EFFECT TRANSISTOR (FET) ON DIELECTRIC LAYER
- Publication number 20150262818
- Publication date Sep 17, 2015
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON SUBSTRATE PREPARATION FOR SELECTIVE III-V EPITAXY
- Publication number 20150255281
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACTS
- Publication number 20150243773
- Publication date Aug 27, 2015
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V Device with Overlapped Extension Regions Using Replacement Gate
- Publication number 20150162425
- Publication date Jun 11, 2015
- International Business Machines Corporation
- Amlan Majumdar
- H01 - BASIC ELECTRIC ELEMENTS

Yanning Sun

Person

Patents Grantslast 30 patents

III-V transistor device with self-aligned doped bottom barrier

Low external resistance channels in III-V semiconductor devices

III-V MOSFET with self-aligned diffusion barrier

Self-aligned heterojunction field effect transistor

III-V field effect transistor on a dielectric layer

Preparation of low defect density of III-V on Si for device fabrica...

III-V MOSFET with self-aligned diffusion barrier

III-V transistor device with self-aligned doped bottom barrier

Planar III-V field effect transistor (FET) on dielectric layer

III-V MOSFET with self-aligned diffusion barrier

Low external resistance channels in III-V semiconductor devices

Semiconductor lateral sidewall growth from a semiconductor pillar

Asymmetric III-V MOSFET on silicon substrate

Self-aligned heterojunction field effect transistor

Reduced current leakage semiconductor device

Structure and method for CMP-free III-V isolation

III-V field effect transistor on a dielectric layer

III-V semiconductor device having self-aligned contacts

Reduced current leakage semiconductor device

Dual-semiconductor complementary metal-oxide-semiconductor device

High-K spacer for extension-free CMOS devices with high mobility ch...

Preparation of low defect density of III-V on Si for device fabrica...

Asymmetric III-V MOSFET on silicon substrate

Preparation of low defect density of III-V on Si for device fabrica...

Multiple via structure and method

Dual-semiconductor complementary metal-oxide-semiconductor device

Reduced current leakage semiconductor device

Planar semiconductor growth on III-V material

III-V semiconductor device having self-aligned contacts

Planar III-V field effect transistor (FET) on dielectric layer

Patents Applicationslast 30 patents

GUIDING STRUCTURES FOR FABRICATION OF ANGLED FEATURES IN A SEMICOND...

FABRICATION OF ANGLED MANDREL STRUCTURES IN SEMICONDUCTOR DEVICE

III-V MOSFET WITH SELF-ALIGNED DIFFUSION BARRIER

III-V TRANSISTOR DEVICE WITH SELF-ALIGNED DOPED BOTTOM BARRIER

LOW EXTERNAL RESISTANCE CHANNELS IN III-V SEMICONDUCTOR DEVICES

SEMICONDUCTOR LATERAL SIDEWALL GROWTH FROM A SEMICONDUCTOR PILLAR

SELF-ALIGNED HETEROJUNCTION FIELD EFFECT TRANSISTOR

III-V FIELD EFFECT TRANSISTOR ON A DIELECTRIC LAYER

III-V TRANSISTOR DEVICE WITH DOPED BOTTOM BARRIER

III-V TRANSISTOR DEVICE WITH SELF-ALIGNED DOPED BOTTOM BARRIER

III-V FIELD EFFECT TRANSISTOR ON A DIELECTRIC LAYER

SELF-ALIGNED HETEROJUNCTION FIELD EFFECT TRANSISTOR

III-V MOSFET WITH SELF-ALIGNED DIFFUSION BARRIER

HIGH-K SPACER FOR EXTENSION-FREE CMOS DEVICES WITH HIGH MOBILITY CH...

III-V MOSFET WITH SELF-ALIGNED DIFFUSION BARRIER

ASYMMETRIC III-V MOSFET ON SILICON SUBSTRATE

DUAL-SEMICONDUCTOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE

PREPARATION OF LOW DEFECT DENSITY OF III-V ON SI FOR DEVICE FABRICA...

PREPARATION OF LOW DEFECT DENSITY OF III-V ON SI FOR DEVICE FABRICA...

PREPARATION OF LOW DEFECT DENSITY OF III-V ON SI FOR DEVICE FABRICA...

REDUCED CURRENT LEAKAGE SEMICONDUCTOR DEVICE

REDUCED CURRENT LEAKAGE SEMICONDUCTOR DEVICE

PLANAR III-V FIELD EFFECT TRANSISTOR (FET) ON DIELECTRIC LAYER

LOW EXTERNAL RESISTANCE CHANNELS IN III-V SEMICONDUCTOR DEVICES

III-V SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACTS

PLANAR SEMICONDUCTOR GROWTH ON III-V MATERIAL

PLANAR III-V FIELD EFFECT TRANSISTOR (FET) ON DIELECTRIC LAYER

SILICON SUBSTRATE PREPARATION FOR SELECTIVE III-V EPITAXY

III-V SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACTS

III-V Device with Overlapped Extension Regions Using Replacement Gate