Yanping Shen

Person

Saratoga Springs, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices having late-formed isolation structures
- Patent number 11,908,857
- Issue date Feb 20, 2024
- GLOBALFOUNDRIES U.S. INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device comprising a top via electrode and methods of making...
- Patent number 11,812,670
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
Information Patent Grant
Top electrode for a memory device and methods of making such a memo...
- Patent number 11,785,860
- Issue date Oct 10, 2023
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
Information Patent Grant
Self-aligned contact
- Patent number 11,721,728
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device comprising a top via electrode and methods of making...
- Patent number 11,569,437
- Issue date Jan 31, 2023
- GLOBALFOUNDRIES U.S. INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having sidewall spacers contacting lower surfaces...
- Patent number 11,502,200
- Issue date Nov 15, 2022
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming two portion spacer after metal gate and contact formation,...
- Patent number 11,482,456
- Issue date Oct 25, 2022
- GLOBALFOUNDRIES U.S. INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and methods of making such a memory device
- Patent number 11,437,568
- Issue date Sep 6, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with asymmetric gate structure and method
- Patent number 11,342,453
- Issue date May 24, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active and dummy fin structures
- Patent number 11,264,504
- Issue date Mar 1, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with niobium-based silicide layer and...
- Patent number 11,239,336
- Issue date Feb 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via structures for use in semiconductor devices
- Patent number 11,222,844
- Issue date Jan 11, 2022
- GLOBALFOUNDRIES U.S. INC.
- Jun Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle of line gate structures
- Patent number 11,171,237
- Issue date Nov 9, 2021
- GLOBALFOUNDRIES U.S. INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures in a wide gate pitch region of semiconduct...
- Patent number 11,164,794
- Issue date Nov 2, 2021
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with uniform gate height and method of formin...
- Patent number 11,094,827
- Issue date Aug 17, 2021
- GLOBALFOUNDRIES U.S. INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structures on transistor devices
- Patent number 10,833,171
- Issue date Nov 10, 2020
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shaped gate caps in spacer-lined openings
- Patent number 10,818,498
- Issue date Oct 27, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor recess to epitaxial regions and related integrated ci...
- Patent number 10,811,422
- Issue date Oct 20, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with a wrap-around silicide source/drain contact stru...
- Patent number 10,700,173
- Issue date Jun 30, 2020
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type transistors with spacers on the gates
- Patent number 10,636,894
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs having gates parallel to fins
- Patent number 10,553,707
- Issue date Feb 4, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial region for embedded source/drain region having uniform th...
- Patent number 10,461,155
- Issue date Oct 29, 2019
- GLOBALFOUNDRIES Inc.
- Yoong Hooi Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vertical field effect transistors with different...
- Patent number 10,249,538
- Issue date Apr 2, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finfet diffusion break having protective liner in fin insulator
- Patent number 10,164,010
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure incorporating non-planar field effect...
- Patent number 10,068,902
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming EPI semiconductor material on the source/drain r...
- Patent number 9,887,094
- Issue date Feb 6, 2018
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to thin down RMG sidewall layers for scalability of gate-la...
- Patent number 9,443,771
- Issue date Sep 13, 2016
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE COMPRISING A TOP VIA ELECTRODE AND METHODS OF MAKING...
- Publication number 20230078730
- Publication date Mar 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ASYMMETRIC GATE STRUCTURE AND METHOD
- Publication number 20220059691
- Publication date Feb 24, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF PROTECTING SEMICONDUCTOR MATERIALS IN THE ACTIVE REGION...
- Publication number 20210399126
- Publication date Dec 23, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA STRUCTURES FOR USE IN SEMICONDUCTOR DEVICES
- Publication number 20210391250
- Publication date Dec 16, 2021
- GLOBALFOUNDRIES U.S. Inc.
- JUN LIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING LATE-FORMED ISOLATION STRUCTURES
- Publication number 20210391323
- Publication date Dec 16, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE COMPRISING A TOP VIA ELECTRODE AND METHODS OF MAKING...
- Publication number 20210336126
- Publication date Oct 28, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP ELECTRODE FOR A MEMORY DEVICE AND METHODS OF MAKING SUCH A MEMO...
- Publication number 20210320244
- Publication date Oct 14, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHODS OF MAKING SUCH A MEMORY DEVICE
- Publication number 20210305495
- Publication date Sep 30, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH NIOBIUM-BASED SILICIDE LAYER AND...
- Publication number 20210249518
- Publication date Aug 12, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT
- Publication number 20210242317
- Publication date Aug 5, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Sipeng GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACTIVE AND DUMMY FIN STRUCTURES
- Publication number 20210234034
- Publication date Jul 29, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Yanping SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES IN A WIDE GATE PITCH REGION OF SEMICONDUCT...
- Publication number 20210035869
- Publication date Feb 4, 2021
- GLOBALFOUNDRIES INC.
- WEI HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH UNIFORM GATE HEIGHT AND METHOD OF FORMIN...
- Publication number 20200388707
- Publication date Dec 10, 2020
- GLOBALFOUNDRIES INC.
- YANPING SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHAPED GATE CAPS IN SPACER-LINED OPENINGS
- Publication number 20200357647
- Publication date Nov 12, 2020
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF LINE GATE STRUCTURES
- Publication number 20200335619
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Yanping SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURES ON TRANSISTOR DEVICES
- Publication number 20200335600
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING TWO PORTION SPACER AFTER METAL GATE AND CONTACT FORMATION,...
- Publication number 20200303261
- Publication date Sep 24, 2020
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR RECESS TO EPITAXIAL REGIONS AND RELATED INTEGRATED CI...
- Publication number 20200161315
- Publication date May 21, 2020
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFETS HAVING GATES PARALLEL TO FINS
- Publication number 20200066883
- Publication date Feb 27, 2020
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH A WRAP-AROUND SILICIDE SOURCE/DRAIN CONTACT STRU...
- Publication number 20190312117
- Publication date Oct 10, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES
- Publication number 20190280105
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL REGION FOR EMBEDDED SOURCE/DRAIN REGION HAVING UNIFORM TH...
- Publication number 20190148492
- Publication date May 16, 2019
- GLOBALFOUNDRIES INC.
- Yoong Hooi Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING VERTICAL FIELD EFFECT TRANSISTORS WITH DIFFERENT...
- Publication number 20190103319
- Publication date Apr 4, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS

Yanping Shen

Person

Patents Grantslast 30 patents

Semiconductor devices having late-formed isolation structures

Memory device comprising a top via electrode and methods of making...

Top electrode for a memory device and methods of making such a memo...

Self-aligned contact

Memory device comprising a top via electrode and methods of making...

Transistor device having sidewall spacers contacting lower surfaces...

Forming two portion spacer after metal gate and contact formation,...

Memory device and methods of making such a memory device

Field effect transistor with asymmetric gate structure and method

Active and dummy fin structures

Integrated circuit structure with niobium-based silicide layer and...

Via structures for use in semiconductor devices

Middle of line gate structures

Semiconductor structures in a wide gate pitch region of semiconduct...

Semiconductor devices with uniform gate height and method of formin...

Spacer structures on transistor devices

Shaped gate caps in spacer-lined openings

Semiconductor recess to epitaxial regions and related integrated ci...

FinFET device with a wrap-around silicide source/drain contact stru...

Fin-type transistors with spacers on the gates

FinFETs having gates parallel to fins

Epitaxial region for embedded source/drain region having uniform th...

Method of forming vertical field effect transistors with different...

Finfet diffusion break having protective liner in fin insulator

Integrated circuit structure incorporating non-planar field effect...

Methods of forming EPI semiconductor material on the source/drain r...

Methods to thin down RMG sidewall layers for scalability of gate-la...

Patents Applicationslast 30 patents

MEMORY DEVICE COMPRISING A TOP VIA ELECTRODE AND METHODS OF MAKING...

FIELD EFFECT TRANSISTOR WITH ASYMMETRIC GATE STRUCTURE AND METHOD

METHODS OF PROTECTING SEMICONDUCTOR MATERIALS IN THE ACTIVE REGION...

VIA STRUCTURES FOR USE IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES HAVING LATE-FORMED ISOLATION STRUCTURES

MEMORY DEVICE COMPRISING A TOP VIA ELECTRODE AND METHODS OF MAKING...

TOP ELECTRODE FOR A MEMORY DEVICE AND METHODS OF MAKING SUCH A MEMO...

MEMORY DEVICE AND METHODS OF MAKING SUCH A MEMORY DEVICE

INTEGRATED CIRCUIT STRUCTURE WITH NIOBIUM-BASED SILICIDE LAYER AND...

SELF-ALIGNED CONTACT

ACTIVE AND DUMMY FIN STRUCTURES

SEMICONDUCTOR STRUCTURES IN A WIDE GATE PITCH REGION OF SEMICONDUCT...

SEMICONDUCTOR DEVICES WITH UNIFORM GATE HEIGHT AND METHOD OF FORMIN...

SHAPED GATE CAPS IN SPACER-LINED OPENINGS

MIDDLE OF LINE GATE STRUCTURES

SPACER STRUCTURES ON TRANSISTOR DEVICES

FORMING TWO PORTION SPACER AFTER METAL GATE AND CONTACT FORMATION,...

SEMICONDUCTOR RECESS TO EPITAXIAL REGIONS AND RELATED INTEGRATED CI...

FINFETS HAVING GATES PARALLEL TO FINS

FINFET DEVICE WITH A WRAP-AROUND SILICIDE SOURCE/DRAIN CONTACT STRU...

FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES

EPITAXIAL REGION FOR EMBEDDED SOURCE/DRAIN REGION HAVING UNIFORM TH...

METHOD OF FORMING VERTICAL FIELD EFFECT TRANSISTORS WITH DIFFERENT...