Yaochung Chen

Person

Rancho Palos Verdes, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Wrap around gate field effect transistor (WAGFET)
- Patent number 9,882,000
- Issue date Jan 30, 2018
- Northrop Grumman Systems Corporation
- Stephen J. Sarkozy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical cavity surface emitting laser with composite reflectors
- Patent number 9,735,545
- Issue date Aug 15, 2017
- Northrop Grumman Systems Corporation
- Yaochung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active input load wide bandwidth low noise HEMT amplifier
- Patent number 7,612,610
- Issue date Nov 3, 2009
- Northrop Grumman Corporation
- Yaochung Chen
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Club extension to a T-gate high electron mobility transistor
- Patent number 7,608,865
- Issue date Oct 27, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Carol Osaka Namba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer thinning techniques
- Patent number 6,764,573
- Issue date Jul 20, 2004
- Northrop Grumman Corporation
- Richard Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer adhesive for semiconductor dry etch applications
- Patent number 6,551,905
- Issue date Apr 22, 2003
- TRW Inc.
- Michael E. Barsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode device
- Patent number 6,452,221
- Issue date Sep 17, 2002
- TRW Inc.
- Richard Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for determining etch depth
- Patent number 6,383,826
- Issue date May 7, 2002
- TRW Inc.
- Michael E. Barsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly efficient compact ultra-high power source
- Patent number 6,344,777
- Issue date Feb 5, 2002
- TRW Inc.
- Daisy L. Ingram
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Combining network to implement a power amplifier having monolithica...
- Patent number 6,259,335
- Issue date Jul 10, 2001
- TRW Inc.
- Daisy L. Ingram
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Field effect transistor with double sided airbridge
- Patent number 6,201,283
- Issue date Mar 13, 2001
- TRW Inc.
- Richard Lai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
WRAP AROUND GATE FIELD EFFECT TRANSISTOR (WAGFET)
- Publication number 20170345895
- Publication date Nov 30, 2017
- Northrop Grumman Systems Corporation
- STEPHEN J. SARKOZY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLUB EXTENSION TO A T-GATE HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20090267115
- Publication date Oct 29, 2009
- Carol Osaka Namba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Active input load wide bandwidth low noise hemt amplifier
- Publication number 20070090879
- Publication date Apr 26, 2007
- Northrop Grumman Corporation
- Yaochung Chen
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Wafer thinning techniques
- Publication number 20030071009
- Publication date Apr 17, 2003
- Richard Lai
- H01 - BASIC ELECTRIC ELEMENTS

Yaochung Chen

Person

Patents Grantslast 30 patents

Wrap around gate field effect transistor (WAGFET)

Vertical cavity surface emitting laser with composite reflectors

Active input load wide bandwidth low noise HEMT amplifier

Club extension to a T-gate high electron mobility transistor

Wafer thinning techniques

Wafer adhesive for semiconductor dry etch applications

Enhancement mode device

Method for determining etch depth

Highly efficient compact ultra-high power source

Combining network to implement a power amplifier having monolithica...

Field effect transistor with double sided airbridge

Patents Applicationslast 30 patents

WRAP AROUND GATE FIELD EFFECT TRANSISTOR (WAGFET)

CLUB EXTENSION TO A T-GATE HIGH ELECTRON MOBILITY TRANSISTOR

Active input load wide bandwidth low noise hemt amplifier

Wafer thinning techniques