Yasuaki Higuchi

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Indium phosphide crystal substrate
- Patent number 11,456,363
- Issue date Sep 27, 2022
- Sumitomo Electric Industries, Ltd.
- Muneyuki Nishioka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium arsenide crystal substrate
- Patent number 11,408,091
- Issue date Aug 9, 2022
- Sumitomo Electric Industries, Ltd.
- Masanori Morishita
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaAs substrate and method for manufacturing the same
- Patent number 10,995,422
- Issue date May 4, 2021
- Sumitomo Electric Industries, Ltd.
- Shinya Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium phosphide substrate, method of inspecting indium phosphide s...
- Patent number 10,663,277
- Issue date May 26, 2020
- Sumitomo Electric Industries, Ltd.
- Shinya Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium phosphide substrate, method of inspecting indium phosphide s...
- Patent number 10,473,445
- Issue date Nov 12, 2019
- Sumitomo Electric Industries, Ltd.
- Shinya Fujiwara
- B24 - GRINDING POLISHING
Information Patent Grant
Indium phosphide substrate, method of inspecting indium phosphide s...
- Patent number 10,436,566
- Issue date Oct 8, 2019
- Sumitomo Electric Industries, Ltd.
- Shinya Fujiwara
- G01 - MEASURING TESTING
Information Patent Grant
GaAs semiconductor substrate and fabrication method thereof
- Patent number 7,619,301
- Issue date Nov 17, 2009
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM ARSENIDE CRYSTAL SUBSTRATE
- Publication number 20200131668
- Publication date Apr 30, 2020
- Sumitomo Electric Industries, Ltd.
- Masanori MORISHITA
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM PHOSPHIDE CRYSTAL SUBSTRATE
- Publication number 20200066850
- Publication date Feb 27, 2020
- Sumitomo Electric Industries, Ltd.
- Muneyuki NISHIOKA
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM PHOSPHIDE SUBSTRATE, METHOD OF INSPECTING INDIUM PHOSPHIDE S...
- Publication number 20200041247
- Publication date Feb 6, 2020
- Sumitomo Electric Industries, Ltd.
- Shinya FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaAs SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190257002
- Publication date Aug 22, 2019
- Sumitomo Electric Industries, Ltd.
- Shinya FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM PHOSPHIDE SUBSTRATE, METHOD OF INSPECTING INDIUM PHOSPHIDE S...
- Publication number 20170363406
- Publication date Dec 21, 2017
- Sumitomo Electric Industries, Ltd.
- Shinya FUJIWARA
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR MANUFACTURING III-V COMPOUND SEMICONDUCTOR SUBSTRATE, ME...
- Publication number 20100013053
- Publication date Jan 21, 2010
- Sumitomo Electric Industries, Ltd.
- Masahiro NAKAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaAs semiconductor substrate and fabrication method thereof
- Publication number 20080296738
- Publication date Dec 4, 2008
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Takayuki Nishiura
- C30 - CRYSTAL GROWTH

Yasuaki Higuchi

Person

Patents Grantslast 30 patents

Indium phosphide crystal substrate

Gallium arsenide crystal substrate

GaAs substrate and method for manufacturing the same

Indium phosphide substrate, method of inspecting indium phosphide s...

Indium phosphide substrate, method of inspecting indium phosphide s...

Indium phosphide substrate, method of inspecting indium phosphide s...

GaAs semiconductor substrate and fabrication method thereof

Patents Applicationslast 30 patents

GALLIUM ARSENIDE CRYSTAL SUBSTRATE

INDIUM PHOSPHIDE CRYSTAL SUBSTRATE

INDIUM PHOSPHIDE SUBSTRATE, METHOD OF INSPECTING INDIUM PHOSPHIDE S...

GaAs SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

INDIUM PHOSPHIDE SUBSTRATE, METHOD OF INSPECTING INDIUM PHOSPHIDE S...

METHOD FOR MANUFACTURING III-V COMPOUND SEMICONDUCTOR SUBSTRATE, ME...

GaAs semiconductor substrate and fabrication method thereof