Yasuda HIROSHI

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dopant profile control in heterojunction bipolar transistor (HBT)
- Patent number 12,068,402
- Issue date Aug 20, 2024
- Texas Instruments Incorporated
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with segmented emitter contacts
- Patent number 11,923,442
- Issue date Mar 5, 2024
- Texas Instruments Incorporated
- Hiroshi Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrashallow emitter formation using ALD and high temperature short...
- Patent number 10,026,815
- Issue date Jul 17, 2018
- Texas Instruments Incorporated
- Rick L. Wise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method for increasing reliability of bipolar...
- Patent number 9,147,756
- Issue date Sep 29, 2015
- Texas Instruments Deutschland GmbH
- Philipp Menz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage bipolar transistor and method of fabrication
- Patent number 8,847,359
- Issue date Sep 30, 2014
- Texas Instruments Incorporated
- Scott Gerard Balster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrashallow emitter formation using ALD and high temperature short...
- Patent number 8,828,835
- Issue date Sep 9, 2014
- Texas Instruments Incorporated
- Rick L. Wise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor in bipolar-CMOS technology
- Patent number 8,754,484
- Issue date Jun 17, 2014
- Texas Instruments Incorporated
- Hiroshi Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor in bipolar-CMOS technology
- Patent number 8,536,002
- Issue date Sep 17, 2013
- Texas Instruments Incorporated
- Hiroshi Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a first bipolar device and a second bip...
- Patent number 8,450,179
- Issue date May 28, 2013
- Texas Instruments Deutschland GmbH
- Badih El-Kareh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an integrated circuit with gate self-protecti...
- Patent number 8,294,218
- Issue date Oct 23, 2012
- Texas Instruments Incorporated
- Badih El-Kareh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating isolated integrated semiconductor structures
- Patent number 8,012,842
- Issue date Sep 6, 2011
- Texas Instruments Incorporated
- Scott Balster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an integrated circuit with gate self-protecti...
- Patent number 7,772,057
- Issue date Aug 10, 2010
- Texas Instruments Incorporated
- Badih El-Kareh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Open source/drain junction field effect transistor
- Patent number 7,615,425
- Issue date Nov 10, 2009
- Texas Instruments Incorporated
- Joe R. Trogolo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DOPANT PROFILE CONTROL IN HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20240405106
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT PROFILE CONTROL IN HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20230088544
- Publication date Mar 23, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH SEGMENTED EMITTER CONTACTS
- Publication number 20210028300
- Publication date Jan 28, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Hiroshi Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultrashallow Emitter Formation Using ALD and High Temperature Short...
- Publication number 20140339678
- Publication date Nov 20, 2014
- Rick L. WISE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR IN BIPOLAR-CMOS TECHNOLOGY
- Publication number 20130328130
- Publication date Dec 12, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Hiroshi YASUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Device and Method for Increasing Reliability of Bipolar...
- Publication number 20130193557
- Publication date Aug 1, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Philipp MENZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR IN BIPOLAR-CMOS TECHNOLOGY
- Publication number 20130032892
- Publication date Feb 7, 2013
- Texas Intruments Incorporated
- Hiroshi YASUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultrashallow Emitter Formation Using ALD and High Temperature Short...
- Publication number 20110057289
- Publication date Mar 10, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Rick L. Wise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating an Integrated Circuit with Gate Self-Protecti...
- Publication number 20100308416
- Publication date Dec 9, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Badih EL-KAREH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE BIPOLAR TRANSISTOR AND METHOD OF FABRICATION
- Publication number 20100032804
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Scott Gerard Balster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating Isolated Integrated Semiconductor Structures
- Publication number 20090127630
- Publication date May 21, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Scott Balster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Open source/drain junction field effect transistor
- Publication number 20080042199
- Publication date Feb 21, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Joe R. Trogolo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A FIRST BIPOLAR DEVICE AND A SECOND BIP...
- Publication number 20070207585
- Publication date Sep 6, 2007
- TEXAS INSTRUMENTS INCOPRORATED
- Badih El-Kareh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating an Integrated Circuit with Gate Self-Protecti...
- Publication number 20070057281
- Publication date Mar 15, 2007
- Badih El-Kareh
- H01 - BASIC ELECTRIC ELEMENTS

Yasuda HIROSHI

Person

Patents Grantslast 30 patents

Dopant profile control in heterojunction bipolar transistor (HBT)

Bipolar transistor with segmented emitter contacts

Ultrashallow emitter formation using ALD and high temperature short...

Electronic device and method for increasing reliability of bipolar...

High voltage bipolar transistor and method of fabrication

Ultrashallow emitter formation using ALD and high temperature short...

Bipolar transistor in bipolar-CMOS technology

Bipolar transistor in bipolar-CMOS technology

Semiconductor device having a first bipolar device and a second bip...

Method of fabricating an integrated circuit with gate self-protecti...

Method for fabricating isolated integrated semiconductor structures

Method of fabricating an integrated circuit with gate self-protecti...

Open source/drain junction field effect transistor

Patents Applicationslast 30 patents

DOPANT PROFILE CONTROL IN HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)

DOPANT PROFILE CONTROL IN HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)

BIPOLAR TRANSISTOR WITH SEGMENTED EMITTER CONTACTS

Ultrashallow Emitter Formation Using ALD and High Temperature Short...

BIPOLAR TRANSISTOR IN BIPOLAR-CMOS TECHNOLOGY

Electronic Device and Method for Increasing Reliability of Bipolar...

BIPOLAR TRANSISTOR IN BIPOLAR-CMOS TECHNOLOGY

Ultrashallow Emitter Formation Using ALD and High Temperature Short...

Method of Fabricating an Integrated Circuit with Gate Self-Protecti...

HIGH VOLTAGE BIPOLAR TRANSISTOR AND METHOD OF FABRICATION

Method for Fabricating Isolated Integrated Semiconductor Structures

Open source/drain junction field effect transistor

SEMICONDUCTOR DEVICE HAVING A FIRST BIPOLAR DEVICE AND A SECOND BIP...

Method of Fabricating an Integrated Circuit with Gate Self-Protecti...