Yasuhiro Shiraki

Person

Hino, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 5,837,565
- Issue date Nov 17, 1998
- Hitachi, Ltd.
- Takao Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,831,296
- Issue date Nov 3, 1998
- Hitachi, Ltd.
- Takao Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a metal silicide film
- Patent number 5,047,111
- Issue date Sep 10, 1991
- Director-General of the Agency of Industrial Science and Technology
- Akitoshi Ishizaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Display device
- Patent number 4,904,989
- Issue date Feb 27, 1990
- Hitachi, Ltd.
- Makoto Matsui
- G02 - OPTICS
Information Patent Grant
Semiconductor device having strained superlattice buffer layers wit...
- Patent number 4,835,583
- Issue date May 30, 1989
- Hitachi, Ltd.
- Makoto Morioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 4,805,005
- Issue date Feb 14, 1989
- Hitachi, Ltd.
- Toshiyuki Usagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having ultrahigh-mobility
- Patent number 4,796,068
- Issue date Jan 3, 1989
- Hitachi, Ltd.
- Yoshifumi Katayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having doping multilayer structure
- Patent number 4,785,340
- Issue date Nov 15, 1988
- Director-General of the Agency of Industrial Science and Technology
- Kiyokazu Nakagawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Heterojunction FET with doubly-doped channel
- Patent number 4,673,959
- Issue date Jun 16, 1987
- Hitachi, Ltd.
- Yasuhiro Shiraki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor member and semiconductor device employing the same
- Patent number 4,672,406
- Issue date Jun 9, 1987
- Hitachi, Ltd.
- Yasushi Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,605,945
- Issue date Aug 12, 1986
- Hitachi, Ltd.
- Yoshifumi Katayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,559,547
- Issue date Dec 17, 1985
- Hitachi, Ltd.
- Yasuhiro Shiraki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film solar cell
- Patent number 4,433,202
- Issue date Feb 21, 1984
- Hitachi, Ltd.
- Eiichi Maruyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 4,351,856
- Issue date Sep 28, 1982
- Hitachi, Ltd.
- Makoto Matsui
- H01 - BASIC ELECTRIC ELEMENTS

Yasuhiro Shiraki

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Method of forming a metal silicide film

Display device

Semiconductor device having strained superlattice buffer layers wit...

Semiconductor device and manufacturing method of the same

Semiconductor device having ultrahigh-mobility

Semiconductor device having doping multilayer structure

Heterojunction FET with doubly-doped channel

Semiconductor member and semiconductor device employing the same

Semiconductor device

Semiconductor device

Thin film solar cell

Semiconductor device and method of manufacturing the same