Yasumichi Yasuda

Person

Hitachi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and power converter using same
- Patent number 6,198,126
- Issue date Mar 6, 2001
- Hitachi, Ltd.
- Mutsuhiro Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power converter using same
- Patent number 5,898,199
- Issue date Apr 27, 1999
- Hitachi, Ltd.
- Mutsuhiro Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having planar junction
- Patent number 5,804,868
- Issue date Sep 8, 1998
- Hitachi, Ltd.
- Hideo Kobayashi
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device and power converter using same
- Patent number 5,691,553
- Issue date Nov 25, 1997
- Hitachi, Ltd.
- Mutsuhiro Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical insulated gate semiconductor device having high current de...
- Patent number 5,670,811
- Issue date Sep 23, 1997
- Hitachi, Ltd.
- Mutsuhiro Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 5,539,244
- Issue date Jul 23, 1996
- Hitachi, Ltd.
- Mutsuhiro Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical insulated gate semiconductor device with less influence fr...
- Patent number 5,285,094
- Issue date Feb 8, 1994
- Hitachi, Ltd.
- Mutsuhiro Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parallel circuit module including a diode and an IGBT
- Patent number 5,274,541
- Issue date Dec 28, 1993
- Hitachi, Ltd.
- Shin Kimura
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Method of manufacturing a power semiconductor device using implants...
- Patent number 5,262,339
- Issue date Nov 16, 1993
- Hitachi, Ltd.
- Mutsuhiro Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 5,208,471
- Issue date May 4, 1993
- Hitachi, Ltd.
- Mutsuhiro Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating insulated gate semiconductor device
- Patent number 5,179,034
- Issue date Jan 12, 1993
- Hitachi, Ltd.
- Mutsuhiro Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating insulated gate semiconductor device
- Patent number 5,032,532
- Issue date Jul 16, 1991
- Hitachi, Ltd.
- Mutsuhiro Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite semiconductor device
- Patent number 4,935,799
- Issue date Jun 19, 1990
- Mutsuhiro Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase diffusion of aluminum with or without boron
- Patent number 4,193,826
- Issue date Mar 18, 1980
- Hitachi, Ltd.
- Yasuhiro Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS

Yasumichi Yasuda

Person

Patents Grantslast 30 patents

Semiconductor device and power converter using same

Semiconductor device and power converter using same

Semiconductor device having planar junction

Semiconductor device and power converter using same

Vertical insulated gate semiconductor device having high current de...

Power semiconductor device

Vertical insulated gate semiconductor device with less influence fr...

Parallel circuit module including a diode and an IGBT

Method of manufacturing a power semiconductor device using implants...

Semiconductor device and manufacturing method therefor

Method for fabricating insulated gate semiconductor device

Method for fabricating insulated gate semiconductor device

Composite semiconductor device

Vapor phase diffusion of aluminum with or without boron