Yasuna Nakamura

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Hyogo, JP

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Patents Grantslast 30 patents

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Semiconductor device having a gate electrode of polycrystal layer a...
- Patent number 5,381,032
- Issue date Jan 10, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Yoshiko Kokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having a two layered s...
- Patent number 5,221,630
- Issue date Jun 22, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Tohru Koyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a two layered structure gate electrode
- Patent number 5,177,569
- Issue date Jan 5, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Tohru Koyama
- H01 - BASIC ELECTRIC ELEMENTS