Yasunobu Nashimoto

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method and apparatus for depositing a thin film, and semiconductor...
- Patent number 6,723,664
- Issue date Apr 20, 2004
- NEC Compound Semiconductor Devices, Ltd.
- Hideki Matsumura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Field effect transistor
- Patent number 6,483,135
- Issue date Nov 19, 2002
- NEC Compound Semiconductor Devices, Ltd.
- Masashi Mizuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for depositing a thin film, and semiconductor...
- Patent number 6,349,669
- Issue date Feb 26, 2002
- NEC Corporation
- Hideki Matsumura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Field effect transistor and its manufacturing method
- Patent number 6,242,765
- Issue date Jun 5, 2001
- NEC Corporation
- Yasunobu Nashimoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fet having non-overlapping field control electrode between gate and...
- Patent number 6,100,571
- Issue date Aug 8, 2000
- NEC Corporation
- Masashi Mizuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing a thin film
- Patent number 6,069,094
- Issue date May 30, 2000
- Hideki Matsumra
- Hideki Matsumura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device
- Patent number 5,821,154
- Issue date Oct 13, 1998
- NEC Corporation
- Yasunobu Nashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plated heat sink
- Patent number 5,726,494
- Issue date Mar 10, 1998
- NEC Corporation
- Yasunobu Nashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plated heat sink
- Patent number 5,698,897
- Issue date Dec 16, 1997
- NEC Corporation
- Yasunobu Nashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction type field-effect transistor
- Patent number 5,661,318
- Issue date Aug 26, 1997
- NEC Corporation
- Yasunobu Nashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of field-effect transistor
- Patent number 5,500,381
- Issue date Mar 19, 1996
- NEC Corporation
- Takayoshi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor field effect transistor having a gate insula...
- Patent number 5,206,528
- Issue date Apr 27, 1993
- NEC Corporation
- Yasunobu Nashimoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Field effect transistor
- Publication number 20030006437
- Publication date Jan 9, 2003
- NEC Corporation
- Masashi Mizuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for depositing a thin film, and semiconductor...
- Publication number 20020086557
- Publication date Jul 4, 2002
- Hideki Matsumura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Yasunobu Nashimoto

Person

Patents Grantslast 30 patents

Method and apparatus for depositing a thin film, and semiconductor...

Field effect transistor

Method and apparatus for depositing a thin film, and semiconductor...

Field effect transistor and its manufacturing method

Fet having non-overlapping field control electrode between gate and...

Method for depositing a thin film

Semiconductor device

Semiconductor device having a plated heat sink

Semiconductor device having a plated heat sink

Junction type field-effect transistor

Fabrication method of field-effect transistor

Compound semiconductor field effect transistor having a gate insula...

Patents Applicationslast 30 patents

Field effect transistor

Method and apparatus for depositing a thin film, and semiconductor...