Claims
- 1. Semiconductor device comprising:a semiconductor substrate having an underlying semiconductor surface; an insulator film deposited on said underlying semiconductor surface, said insulator film forming a semiconductor-insulator junction, wherein the interfacial level density of said semiconductor-insulator junction is 1012 eV−1 cm−2 or less, and said insulator film is deposited on said underlying semiconductor surface after a treatment that reduces interfacial defects on said semiconductor-insulator junction utilizing a reaction of a treatment gas supplied to the semiconductor substrate having said underlying semiconductor surface via a thermal catalysis body provided near said substrate.
- 2. Semiconductor device as claimed in claim 1, wherein said semiconductor-insulation junction is one obtained by deposition of said insulator film, which is carried out in said same process chamber after said treatment and utilizes a reaction of a deposition gas supplied with said substrate via said same thermal catalysis body.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-257675 |
Jun 1996 |
JP |
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Parent Case Info
This application is a divisional of prior application Ser. No. 09/102,665 filed on Jun. 23, 1998 now U.S. Pat. No. 6,349,699, which is a divisional of prior application Ser. No. 08/924,304 on Sep. 5, 1997 now U.S. Pat No. 6,069,094.
US Referenced Citations (15)
Foreign Referenced Citations (1)
Number |
Date |
Country |
63-40314 |
Feb 1988 |
JP |
Non-Patent Literature Citations (1)
Entry |
S. Yamazaki et al. Silicon Nitride Prepared by the SiH4-NH3 Reaction with Catalysis, Japan Journal of Applied Physics, vol. 9, No. 12, Dec. 1970, pp. 1467-1477. |