Yasunobu Saito

Person

  • Tokyo, JP

Patents Grantslast 30 patents

  • Information Patent Grant

    Semiconductor device

    • Patent number 12,119,396
    • Issue date Oct 15, 2024
    • Kabushiki Kaisha Toshiba
    • Yasunobu Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device

    • Patent number 9,917,182
    • Issue date Mar 13, 2018
    • Kabushiki Kaisha Toshiba
    • Yasunobu Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device

    • Patent number 9,698,141
    • Issue date Jul 4, 2017
    • Kabushiki Kaisha Toshiba
    • Yasunobu Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device and method of manufacturing the same

    • Patent number 9,466,705
    • Issue date Oct 11, 2016
    • Kabushiki Kaisha Toshiba
    • Akira Yoshioka
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device

    • Patent number 9,412,825
    • Issue date Aug 9, 2016
    • Kabushiki Kaisha Toshiba
    • Takaaki Yasumoto
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Nitride semiconductor device and method for manufacturing same

    • Patent number 9,412,857
    • Issue date Aug 9, 2016
    • Kabushiki Kaisha Toshiba
    • Akira Yoshioka
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device

    • Patent number 9,391,142
    • Issue date Jul 12, 2016
    • Kabushiki Kaisha Toshiba
    • Wataru Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    GaN based semiconductor device and method of manufacturing the same

    • Patent number 9,184,258
    • Issue date Nov 10, 2015
    • Kabushiki Kaisha Toshiba
    • Akira Yoshioka
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device

    • Patent number 9,165,922
    • Issue date Oct 20, 2015
    • Kabushiki Kaisha Toshiba
    • Akira Yoshioka
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Nitride semiconductor device

    • Patent number 9,082,691
    • Issue date Jul 14, 2015
    • Kabushiki Kaisha Toshiba
    • Akira Yoshioka
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    HEMT semiconductor device

    • Patent number 9,054,171
    • Issue date Jun 9, 2015
    • Kabushiki Kaisha Toshiba
    • Tetsuya Ohno
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device

    • Patent number 9,035,320
    • Issue date May 19, 2015
    • Kabushiki Kaisha Toshiba
    • Yasunobu Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Nitride semiconductor device

    • Patent number 9,029,915
    • Issue date May 12, 2015
    • Kabushiki Kaisha Toshiba
    • Wataru Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Nitride semiconductor device

    • Patent number 9,006,790
    • Issue date Apr 14, 2015
    • Kabushiki Kaisha Toshiba
    • Akira Yoshioka
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device and method for manufacturing same

    • Patent number 8,963,204
    • Issue date Feb 24, 2015
    • Kabushiki Kaisha Toshiba
    • Akira Yoshioka
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device including heterojunction field effect transist...

    • Patent number 8,928,039
    • Issue date Jan 6, 2015
    • Kabushiki Kaisha Toshiba
    • Wataru Saito
    • H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • Information Patent Grant

    Rectifier circuit

    • Patent number 8,872,192
    • Issue date Oct 28, 2014
    • Kabushiki Kaisha Toshiba
    • Tatsuya Nishiwaki
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Nitride semiconductor device

    • Patent number 8,860,090
    • Issue date Oct 14, 2014
    • Kabushiki Kaisha Toshiba
    • Wataru Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device having nitride layers

    • Patent number 8,853,742
    • Issue date Oct 7, 2014
    • Kabushiki Kaisha Toshiba
    • Akira Yoshioka
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Nitride semiconductor device and method for manufacturing same

    • Patent number 8,759,878
    • Issue date Jun 24, 2014
    • Kabushiki Kaisha Toshiba
    • Yasunobu Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Nitride semiconductor device

    • Patent number 8,664,696
    • Issue date Mar 4, 2014
    • Kabushiki Kaisha Toshiba
    • Akira Yoshioka
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Nitride semiconductor device

    • Patent number 8,581,301
    • Issue date Nov 12, 2013
    • Kabushiki Kaisha Toshiba
    • Wataru Saito
    • H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • Information Patent Grant

    Semiconductor device having nitride layers

    • Patent number 8,575,656
    • Issue date Nov 5, 2013
    • Kabushiki Kaisha Toshiba
    • Akira Yoshioka
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Nitride semiconductor device

    • Patent number 8,390,030
    • Issue date Mar 5, 2013
    • Kabushiki Kaisha Toshiba
    • Wataru Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device

    • Patent number 8,227,834
    • Issue date Jul 24, 2012
    • Kabushiki Kaisha Toshiba
    • Yasunobu Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Nitride semiconductor device

    • Patent number 8,203,172
    • Issue date Jun 19, 2012
    • Kabushiki Kaisha Toshiba
    • Wataru Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device

    • Patent number 8,030,660
    • Issue date Oct 4, 2011
    • Kabushiki Kaisha Toshiba
    • Yasunobu Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Nitride semiconductor device

    • Patent number 7,935,983
    • Issue date May 3, 2011
    • Kabushiki Kaisha Toshiba
    • Yasunobu Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device

    • Patent number 7,728,354
    • Issue date Jun 1, 2010
    • Kabushiki Kaisha Toshiba
    • Wataru Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Nitride semiconductor device

    • Patent number 7,538,366
    • Issue date May 26, 2009
    • Kabushiki Kaisha Toshiba
    • Wataru Saito
    • H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20240313045
    • Publication date Sep 19, 2024
    • Kabushiki Kaisha Toshiba
    • Takuya YASUTAKE
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20240096973
    • Publication date Mar 21, 2024
    • Kabushiki Kaisha Toshiba
    • Keita SAITO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20220029006
    • Publication date Jan 27, 2022
    • Kabushiki Kaisha Toshiba
    • Yasunobu SAITO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20200091330
    • Publication date Mar 19, 2020
    • Kabushiki Kaisha Toshiba
    • Yasunobu SAITO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20180076311
    • Publication date Mar 15, 2018
    • Kabushiki Kaisha Toshiba
    • Yasunobu SAITO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20170263716
    • Publication date Sep 14, 2017
    • Kabushiki Kaisha Toshiba
    • Yasunobu SAITO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20170069623
    • Publication date Mar 9, 2017
    • Kabushiki Kaisha Toshiba
    • Yasunobu SAITO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20170069747
    • Publication date Mar 9, 2017
    • Kabushiki Kaisha Toshiba
    • Yasunobu SAITO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20160079410
    • Publication date Mar 17, 2016
    • Kabushiki Kaisha Toshiba
    • Takaaki YASUMOTO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

    • Publication number 20160027909
    • Publication date Jan 28, 2016
    • Kabushiki Kaisha Toshiba
    • Akira Yoshioka
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20150263001
    • Publication date Sep 17, 2015
    • Kabushiki Kaisha Toshiba
    • Yasunobu SAITO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

    • Publication number 20150263101
    • Publication date Sep 17, 2015
    • Kabushiki Kaisha Toshiba
    • Shingo Masuko
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20150263103
    • Publication date Sep 17, 2015
    • Kabushiki Kaisha Toshiba
    • Yasunobu Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20150263104
    • Publication date Sep 17, 2015
    • Kabushiki Kaisha Toshiba
    • Wataru Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20150263152
    • Publication date Sep 17, 2015
    • Kabushiki Kaisha Toshiba
    • Takaaki YASUMOTO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    POWER SUPPLY CIRCUIT

    • Publication number 20150263630
    • Publication date Sep 17, 2015
    • Kabushiki Kaisha Toshiba
    • Toshiyuki Naka
    • H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20150263700
    • Publication date Sep 17, 2015
    • Kabushiki Kaisha Toshiba
    • Takaaki YASUMOTO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

    • Publication number 20150123141
    • Publication date May 7, 2015
    • Kabushiki Kaisha Toshiba
    • Akira YOSHIOKA
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20150076506
    • Publication date Mar 19, 2015
    • Kabushiki Kaisha Toshiba
    • Takaaki Yasumoto
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

    • Publication number 20150069405
    • Publication date Mar 12, 2015
    • Kabushiki Kaisha Toshiba
    • Akira Yoshioka
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20150069468
    • Publication date Mar 12, 2015
    • Kabushiki Kaisha Toshiba
    • Tetsuya Ohno
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

    • Publication number 20150034903
    • Publication date Feb 5, 2015
    • Kabushiki Kaisha Toshiba
    • Hidetoshi FUJIMOTO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20140284610
    • Publication date Sep 25, 2014
    • Kabushiki Kaisha Toshiba
    • Akira YOSHIOKA
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

    • Publication number 20140246700
    • Publication date Sep 4, 2014
    • Kabushiki Kaisha Toshiba
    • Yasunobu Saito
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE HAVING NITRIDE LAYERS

    • Publication number 20140097505
    • Publication date Apr 10, 2014
    • Kabushiki Kaisha Toshiba
    • Akira YOSHIOKA
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

    • Publication number 20140077263
    • Publication date Mar 20, 2014
    • Kabushiki Kaisha Toshiba
    • Akira YOSHIOKA
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20140077217
    • Publication date Mar 20, 2014
    • KABUSHIKI KAISHA TOSHIBA
    • Yasunobu SAITO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE

    • Publication number 20140035004
    • Publication date Feb 6, 2014
    • Kabushiki Kaisha Toshiba
    • Wataru SAITO
    • H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • Information Patent Application

    RECTIFIER CIRCUIT

    • Publication number 20130341641
    • Publication date Dec 26, 2013
    • Kabushiki Kaisha Toshiba
    • Tatsuya NISHIWAKI
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    NITRIDE SEMICONDUCTOR DEVICE

    • Publication number 20130248931
    • Publication date Sep 26, 2013
    • Kabushiki Kaisha Toshiba
    • Wataru SAITO
    • H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER