Yasushi Miyasaka

Person

Nagano, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 9,018,633
- Issue date Apr 28, 2015
- Fuji Electric Co., Ltd.
- Hiroki Wakimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature measurement device of power semiconductor device
- Patent number 7,507,023
- Issue date Mar 24, 2009
- Fuji Electric Device Technology Co., Ltd.
- Kazunori Oyabe
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device with a short-lifetime region and manufacturing...
- Patent number 7,282,781
- Issue date Oct 16, 2007
- Fuji Electric Device Technology Co., Ltd.
- Toshiyuki Matsui
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Diode and method for manufacturing the same
- Patent number 7,276,771
- Issue date Oct 2, 2007
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and method for manufacturing the same
- Patent number 7,187,054
- Issue date Mar 6, 2007
- Fuji Electric Holdings Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and method for manufacturing the same
- Patent number 7,112,865
- Issue date Sep 26, 2006
- Fuji Electric Holdings Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and method for manufacturing the same
- Patent number 6,975,013
- Issue date Dec 13, 2005
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with alternating conductivity type layer and m...
- Patent number 6,815,766
- Issue date Nov 9, 2004
- Fuji Electric Co., Ltd.
- Yasushi Miyasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with alternating conductivity type layer and m...
- Patent number 6,787,420
- Issue date Sep 7, 2004
- Fuji Electric Co., Ltd.
- Yasushi Miyasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with alternating conductivity type layer and m...
- Patent number 6,677,626
- Issue date Jan 13, 2004
- Fuji Electric Co., Ltd.
- Youichi Shindou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with alternating conductivity type layer and m...
- Patent number 6,673,679
- Issue date Jan 6, 2004
- Fuji Electric Co., Ltd.
- Yasushi Miyasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and method for manufacturing the same
- Patent number 6,383,836
- Issue date May 7, 2002
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with alternating conductivity type layer and m...
- Patent number 6,291,856
- Issue date Sep 18, 2001
- Fuji Electric Co., Ltd.
- Yasushi Miyasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and method for manufacturing the same
- Patent number 6,221,688
- Issue date Apr 24, 2001
- Fuji Electric Co. Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode having a guard ring structure
- Patent number 6,177,712
- Issue date Jan 23, 2001
- Fuji Electric Co., Ltd.
- Yasushi Miyasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier
- Patent number 6,175,143
- Issue date Jan 16, 2001
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140061672
- Publication date Mar 6, 2014
- Fuji Electric Co., Ltd.
- Hiroki WAKIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Temperature measurement device of power semiconductor device
- Publication number 20060255361
- Publication date Nov 16, 2006
- Kazunori Oyabe
- G01 - MEASURING TESTING
Information Patent Application
Diode and method for manufacturing the same
- Publication number 20060244006
- Publication date Nov 2, 2006
- Fuji Electric Holdings Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with a short-lifetime region and manufacturing...
- Publication number 20050263842
- Publication date Dec 1, 2005
- Fuji Electric Device
- Toshiyuki Matsui
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Diode and method for manufacturing the same
- Publication number 20050179105
- Publication date Aug 18, 2005
- Fuji Electric Holdings Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode and method for manufacturing the same
- Publication number 20050151219
- Publication date Jul 14, 2005
- Fuji Electric Holdings Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with alternating conductivity type layer and m...
- Publication number 20030207536
- Publication date Nov 6, 2003
- Fuji Electric, Co., Ltd.
- Yasushi Miyasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode and method for manufacturing the same
- Publication number 20030030120
- Publication date Feb 13, 2003
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with alternating conductivity type layer and m...
- Publication number 20010046739
- Publication date Nov 29, 2001
- Fuji Electric, Co., Ltd.
- Yasushi Miyasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode and method for manufacturing the same
- Publication number 20010035560
- Publication date Nov 1, 2001
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode and method for manufacturing the same
- Publication number 20010017393
- Publication date Aug 30, 2001
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS

Yasushi Miyasaka

Person

Patents Grantslast 30 patents

Semiconductor device

Temperature measurement device of power semiconductor device

Semiconductor device with a short-lifetime region and manufacturing...

Diode and method for manufacturing the same

Diode and method for manufacturing the same

Diode and method for manufacturing the same

Diode and method for manufacturing the same

Semiconductor device with alternating conductivity type layer and m...

Semiconductor device with alternating conductivity type layer and m...

Semiconductor device with alternating conductivity type layer and m...

Semiconductor device with alternating conductivity type layer and m...

Diode and method for manufacturing the same

Semiconductor device with alternating conductivity type layer and m...

Diode and method for manufacturing the same

Schottky barrier diode having a guard ring structure

Schottky barrier

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

Temperature measurement device of power semiconductor device

Diode and method for manufacturing the same

Semiconductor device with a short-lifetime region and manufacturing...

Diode and method for manufacturing the same

Diode and method for manufacturing the same

Semiconductor device with alternating conductivity type layer and m...

Diode and method for manufacturing the same

Semiconductor device with alternating conductivity type layer and m...

Diode and method for manufacturing the same

Diode and method for manufacturing the same