Yasushi Urakami

Person

Toyoake-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and production method thereof
- Patent number 10,985,241
- Issue date Apr 20, 2021
- Toyota Jidosha Kabushiki Kaisha
- Hiromichi Kinpara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 10,923,395
- Issue date Feb 16, 2021
- Denso Corporation
- Yasushi Urakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus
- Patent number 10,840,386
- Issue date Nov 17, 2020
- Toyota Jidosha Kabushiki Kaisha
- Hiroki Miyake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,770,580
- Issue date Sep 8, 2020
- Toyota Jidosha Kabushiki Kaisha
- Toru Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC-MOSFET and method of manufacturing the same
- Patent number 10,770,579
- Issue date Sep 8, 2020
- Toyota Jidosha Kabushiki Kaisha
- Hidefumi Takaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,522,627
- Issue date Dec 31, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hidefumi Takaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching element
- Patent number 10,374,081
- Issue date Aug 6, 2019
- Toyota Jidosha Kabushiki Kaisha
- Jun Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching element
- Patent number 10,367,091
- Issue date Jul 30, 2019
- Toyota Jidosha Kabushiki Kaisha
- Jun Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching element and method of manufacturing the same
- Patent number 10,326,015
- Issue date Jun 18, 2019
- Toyota Jidosha Kabushiki Kaisha
- Masatoshi Tsujimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 10,263,071
- Issue date Apr 16, 2019
- Toyota Jidosha Kabushiki Kaisha
- Masakazu Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing switching element
- Patent number 10,243,035
- Issue date Mar 26, 2019
- Toyota Jidosha Kabushiki Kaisha
- Yuki Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 10,204,980
- Issue date Feb 12, 2019
- Toyota Jidosha Kabushiki Kaisha
- Yoshifumi Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching device
- Patent number 10,170,470
- Issue date Jan 1, 2019
- Toyota Jidosha Kabushiki Kaisha
- Toru Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal, SiC wafer, SiC substrate, and SiC device
- Patent number 10,125,435
- Issue date Nov 13, 2018
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Itaru Gunjishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching device and method of manufacturing the same
- Patent number 10,121,862
- Issue date Nov 6, 2018
- Toyota Jidosha Kabushiki Kaisha
- Yuto Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching device
- Patent number 10,056,374
- Issue date Aug 21, 2018
- Toyota Jidosha Kabushiki Kaisha
- Jun Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seed crystal for SiC single-crystal growth, SiC single crystal, and...
- Patent number 9,534,317
- Issue date Jan 3, 2017
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal, SiC wafer, and semiconductor device
- Patent number 9,166,008
- Issue date Oct 20, 2015
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of silicon carbide single crystal
- Patent number 9,145,622
- Issue date Sep 29, 2015
- Denso Corporation
- Yasushi Urakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal, production method therefor, SiC wafer and semic...
- Patent number 9,096,947
- Issue date Aug 4, 2015
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Itaru Gunjishima
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing method of silicon carbide single crystal
- Patent number 9,051,663
- Issue date Jun 9, 2015
- Denso Corporation
- Yasushi Urakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal, SiC wafer, and semiconductor device
- Patent number 9,048,102
- Issue date Jun 2, 2015
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing homogeneous silicon carbide single crystal...
- Patent number 8,936,682
- Issue date Jan 20, 2015
- Denso Corporation
- Yasushi Urakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device having p-n column portion
- Patent number 7,838,995
- Issue date Nov 23, 2010
- Denso Corporation
- Yasushi Urakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,564,095
- Issue date Jul 21, 2009
- Denso Corporation
- Yasushi Urakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate formed by epitaxially filling a trench in a...
- Patent number 7,063,751
- Issue date Jun 20, 2006
- Denso Corporation
- Yasushi Urakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including power MOSFET and peripheral device a...
- Patent number 6,642,577
- Issue date Nov 4, 2003
- Denso Corporation
- Shoichi Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor substrate having an epitaxia...
- Patent number 6,495,294
- Issue date Dec 17, 2002
- Denso Corporation
- Shoichi Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate type semiconductor device and method of manufacturing
- Patent number 6,495,883
- Issue date Dec 17, 2002
- Denso Corporation
- Takumi Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving epitaxially-filled trench by smoothing trench p...
- Patent number 6,406,982
- Issue date Jun 18, 2002
- Denso Corporation
- Yasushi Urakami
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200152542
- Publication date May 14, 2020
- Toyota Jidosha Kabushiki Kaisha
- Jun SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200052112
- Publication date Feb 13, 2020
- Toyota Jidosha Kabushiki Kaisha
- Toru ONISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200043823
- Publication date Feb 6, 2020
- Toyota Jidosha Kabushiki Kaisha
- Tatsuji NAGAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- Publication number 20200044018
- Publication date Feb 6, 2020
- Toyota Jidosha Kabushiki Kaisha
- Hiromichi KINPARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS
- Publication number 20200020814
- Publication date Jan 16, 2020
- Toyota Jidosha Kabushiki Kaisha
- Hiroki MIYAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20190341308
- Publication date Nov 7, 2019
- DENSO CORPORATION
- Yasushi URAKAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCHING ELEMENT
- Publication number 20190109187
- Publication date Apr 11, 2019
- Toyota Jidosha Kabushiki Kaisha
- Tadashi MISUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190067420
- Publication date Feb 28, 2019
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Hidefumi TAKAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCHING ELEMENT
- Publication number 20190058061
- Publication date Feb 21, 2019
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Jun SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCHING ELEMENT
- Publication number 20190058060
- Publication date Feb 21, 2019
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Jun SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE
- Publication number 20190043999
- Publication date Feb 7, 2019
- Toyota Jidosha Kabushiki Kaisha
- Tatsuji NAGAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE
- Publication number 20190035944
- Publication date Jan 31, 2019
- Toyota Jidosha Kabushiki Kaisha
- Tatsuji NAGAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
- Publication number 20180247999
- Publication date Aug 30, 2018
- Toyota Jidosha Kabushiki Kaisha
- Takuji ARAUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180240906
- Publication date Aug 23, 2018
- Toyota Jidosha Kabushiki Kaisha
- Masatoshi TSUJIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20180204906
- Publication date Jul 19, 2018
- Toyota Jidosha Kabushiki Kaisha
- Masakazu OKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC-MOSFET AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180182889
- Publication date Jun 28, 2018
- Toyota Jidosha Kabushiki Kaisha
- Hidefumi Takaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SWITCHING ELEMENT
- Publication number 20180175140
- Publication date Jun 21, 2018
- Toyota Jidosha Kabushiki Kaisha
- Yuki MURAKAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20180151364
- Publication date May 31, 2018
- Toyota Jidosha Kabushiki Kaisha
- Hiroyuki YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SINGLE CRYSTAL SEED, SIC INGOT, SIC SINGLE CRYSTAL SEED PRODUCT...
- Publication number 20180130872
- Publication date May 10, 2018
- SHOWA DENKO K.K.
- Yuuki FURUYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20180114829
- Publication date Apr 26, 2018
- Toyota Jidosha Kabushiki Kaisha
- Tatsuji NAGAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING DEVICE
- Publication number 20180114789
- Publication date Apr 26, 2018
- Toyota Jidosha Kabushiki Kaisha
- Toru ONISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING DEVICE
- Publication number 20180102361
- Publication date Apr 12, 2018
- Toyota Jidosha Kabushiki Kaisha
- Jun SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180076289
- Publication date Mar 15, 2018
- Toyota Jidosha Kabushiki Kaisha
- Yuto KUROKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20180019301
- Publication date Jan 18, 2018
- Toyota Jidosha Kabushiki Kaisha
- Yoshifumi YASUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SINGLE CRYSTAL, SIC WAFER, SIC SUBSTRATE, AND SIC DEVICE
- Publication number 20150308014
- Publication date Oct 29, 2015
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Itaru GUNJISHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED CRYSTAL FOR SIC SINGLE-CRYSTAL GROWTH, SIC SINGLE CRYSTAL, AND...
- Publication number 20150275397
- Publication date Oct 1, 2015
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE
- Publication number 20140291700
- Publication date Oct 2, 2014
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMIC...
- Publication number 20140091325
- Publication date Apr 3, 2014
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE
- Publication number 20140027787
- Publication date Jan 30, 2014
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20120132132
- Publication date May 31, 2012
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Yasushi Urakami
- C30 - CRYSTAL GROWTH

Yasushi Urakami

Person

Patents Grantslast 30 patents

Semiconductor device and production method thereof

Semiconductor device and manufacturing method of semiconductor device

Semiconductor apparatus

Semiconductor device

SiC-MOSFET and method of manufacturing the same

Semiconductor device

Semiconductor switching element

Semiconductor switching element

Switching element and method of manufacturing the same

Method of manufacturing semiconductor device

Method of manufacturing switching element

Semiconductor device and manufacturing method of the same

Switching device

SiC single crystal, SiC wafer, SiC substrate, and SiC device

Switching device and method of manufacturing the same

Switching device

Seed crystal for SiC single-crystal growth, SiC single crystal, and...

SiC single crystal, SiC wafer, and semiconductor device

Manufacturing method of silicon carbide single crystal

SiC single crystal, production method therefor, SiC wafer and semic...

Manufacturing method of silicon carbide single crystal

SiC single crystal, SiC wafer, and semiconductor device

Method of manufacturing homogeneous silicon carbide single crystal...

Semiconductor device having p-n column portion

Semiconductor device and method for manufacturing the same

Semiconductor substrate formed by epitaxially filling a trench in a...

Semiconductor device including power MOSFET and peripheral device a...

Method for manufacturing semiconductor substrate having an epitaxia...

Trench gate type semiconductor device and method of manufacturing

Method of improving epitaxially-filled trench by smoothing trench p...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

SEMICONDUCTOR APPARATUS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR SWITCHING ELEMENT

SEMICONDUCTOR DEVICE

SEMICONDUCTOR SWITCHING ELEMENT

SEMICONDUCTOR SWITCHING ELEMENT

SCHOTTKY DIODE

SCHOTTKY DIODE

METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

SWITCHING ELEMENT AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SiC-MOSFET AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING SWITCHING ELEMENT

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SIC SINGLE CRYSTAL SEED, SIC INGOT, SIC SINGLE CRYSTAL SEED PRODUCT...

Semiconductor Device

SWITCHING DEVICE

SWITCHING DEVICE

SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SIC SINGLE CRYSTAL, SIC WAFER, SIC SUBSTRATE, AND SIC DEVICE

SEED CRYSTAL FOR SIC SINGLE-CRYSTAL GROWTH, SIC SINGLE CRYSTAL, AND...

SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE

SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMIC...

SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL