Yen-Hao Shih

Person

Elmsford, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
3D NAND memory using two separate SSL structures in an interlaced c...
- Patent number 9,536,611
- Issue date Jan 3, 2017
- Macronix International Co., Ltd.
- Yen-Hao Shih
- G11 - INFORMATION STORAGE
Information Patent Grant
High aspect ratio etching method
- Patent number 9,419,010
- Issue date Aug 16, 2016
- Macronix International Co., Ltd.
- Yen-Hao Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory coding
- Patent number 9,336,867
- Issue date May 10, 2016
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductor structure and method
- Patent number 9,252,156
- Issue date Feb 2, 2016
- Macronix International Co., Ltd.
- Yen-Hao Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical channel transistor structure and manufacturing method thereof
- Patent number 9,246,015
- Issue date Jan 26, 2016
- Macronix International Co., Ltd.
- Tzu-Hsuan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene conductor for 3D array
- Patent number 9,123,778
- Issue date Sep 1, 2015
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductor with a plurality of vertical extensions for a 3D device
- Patent number 9,099,538
- Issue date Aug 4, 2015
- Macronix International Co., Ltd.
- Yen-Hao Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND flash with non-trapping switch transistors
- Patent number 9,082,656
- Issue date Jul 14, 2015
- Macronix International Co., Ltd.
- Shih-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array arrangement including carrier source
- Patent number 9,076,535
- Issue date Jul 7, 2015
- Macronix International Co., Ltd.
- Chih-Wei Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Dielectric charge trapping memory cells with redundancy
- Patent number 9,019,771
- Issue date Apr 28, 2015
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Conductor structure and method
- Patent number 8,987,914
- Issue date Mar 24, 2015
- Macronix International Co., Ltd.
- Yen-Hao Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ge-Rich GST-212 phase change memory materials
- Patent number 8,946,666
- Issue date Feb 3, 2015
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell access device having a pn-junction with polycrystalline...
- Patent number 8,907,316
- Issue date Dec 9, 2014
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Composite target sputtering for forming doped phase change materials
- Patent number 8,772,747
- Issue date Jul 8, 2014
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Memory cell access device having a pn-junction with polycrystalline...
- Patent number 8,664,689
- Issue date Mar 4, 2014
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming interlayer connectors in a three-dimensional sta...
- Patent number 8,633,099
- Issue date Jan 21, 2014
- Macronix International Co., Ltd.
- Yen-Hao Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory coding
- Patent number 8,634,235
- Issue date Jan 21, 2014
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Contact architecture for 3D memory array
- Patent number 8,574,992
- Issue date Nov 5, 2013
- Macronix International Co., Ltd.
- Shih-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D two bit-per-cell NAND flash memory
- Patent number 8,437,192
- Issue date May 7, 2013
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Composite target sputtering for forming doped phase change materials
- Patent number 8,426,242
- Issue date Apr 23, 2013
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
3D memory array arranged for FN tunneling program and erase
- Patent number 8,426,294
- Issue date Apr 23, 2013
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method for sensing and fixing margin cells
- Patent number 8,406,033
- Issue date Mar 26, 2013
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory with fast write characteristics
- Patent number 8,374,019
- Issue date Feb 12, 2013
- Macronix International Co., Ltd.
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory having one or more non-constant doping profiles
- Patent number 8,363,463
- Issue date Jan 29, 2013
- Macronix International Co., Ltd.
- Yen-Hao Shih
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods and apparatus for reducing defect bits in phase change memory
- Patent number 8,238,149
- Issue date Aug 7, 2012
- Macronix International Co., Ltd.
- Yen-Hao Shih
- G11 - INFORMATION STORAGE
Information Patent Grant
3D memory array arranged for FN tunneling program and erase
- Patent number 8,203,187
- Issue date Jun 19, 2012
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Rewritable memory device based on segregation/re-absorption
- Patent number 8,064,247
- Issue date Nov 22, 2011
- Macronix International Co., Ltd.
- Ming-Hsiu Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change device having two or more substantial amorphous region...
- Patent number 8,059,449
- Issue date Nov 15, 2011
- Macronix International Co., Ltd.
- Yen-Hao Shih
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ASPECT RATIO ETCHING METHOD
- Publication number 20150243674
- Publication date Aug 27, 2015
- Macronix International Co., Ltd.
- YEN-HAO SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTOR STRUCTURE AND METHOD
- Publication number 20150171107
- Publication date Jun 18, 2015
- Macronix International Co., Ltd.
- Yen-Hao SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTOR WITH A PLURALITY OF VERTICAL EXTENSIONS FOR A 3D DEVICE
- Publication number 20150076668
- Publication date Mar 19, 2015
- Macronix International Co., Ltd.
- YEN-HAO SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY ARRANGEMENT INCLUDING CARRIER SOURCE
- Publication number 20150009757
- Publication date Jan 8, 2015
- Macronix International Co., Ltd.
- CHIH-WEI HU
- G11 - INFORMATION STORAGE
Information Patent Application
DAMASCENE CONDUCTOR FOR 3D ARRAY
- Publication number 20140264546
- Publication date Sep 18, 2014
- MACRONIX INTENATIONAL CO., LTD.
- ERH-KUN LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY ARRANGEMENT FOR 3D NAND MEMORY
- Publication number 20140269077
- Publication date Sep 18, 2014
- Macronix International Co., Ltd.
- YEN-HAO SHIH
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTOR STRUCTURE AND METHOD
- Publication number 20140217518
- Publication date Aug 7, 2014
- Yen-Hao SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC CHARGE TRAPPING MEMORY CELLS WITH REDUNDANCY
- Publication number 20140119127
- Publication date May 1, 2014
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY CODING
- Publication number 20140119110
- Publication date May 1, 2014
- Macronix International Co., Ltd.
- HSIANG-LAN LUNG
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING INTERLAYER CONNECTORS IN A THREE-DIMENSIONAL STA...
- Publication number 20140021628
- Publication date Jan 23, 2014
- Macronix International Co., Ltd.
- Yen-Hao Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS
- Publication number 20130234093
- Publication date Sep 12, 2013
- International Business Machines Corporation
- HUAI-YU CHENG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NAND FLASH WITH NON-TRAPPING SWITCH TRANSISTORS
- Publication number 20130119455
- Publication date May 16, 2013
- Macronix International Co., Ltd.
- Shih-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ge-RICH GST-212 PHASE CHANGE MEMORY MATERIALS
- Publication number 20120326111
- Publication date Dec 27, 2012
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY ARRAY ARRANGED FOR FN TUNNELING PROGRAM AND ERASE
- Publication number 20120231613
- Publication date Sep 13, 2012
- Macronix International Co., Ltd.
- HSIANG-LAN LUNG
- G11 - INFORMATION STORAGE
Information Patent Application
COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS
- Publication number 20120193595
- Publication date Aug 2, 2012
- International Business Machines Corporation
- Huai-Yu Cheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Phase Change Memory With Fast Write Characteristics
- Publication number 20120170359
- Publication date Jul 5, 2012
- Macronix International Co., Ltd.
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY CODING
- Publication number 20110317480
- Publication date Dec 29, 2011
- Macronix International Co., Ltd,
- HSIANG-LAN LUNG
- G11 - INFORMATION STORAGE
Information Patent Application
3D TWO-BIT-PER-CELL NAND FLASH MEMORY
- Publication number 20110286283
- Publication date Nov 24, 2011
- Macronix International Co., Ltd.
- HSIANG-LAN LUNG
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE STRUCTURE WITH COMPOSITE DOPING FOR PHASE CHANGE MEMORY
- Publication number 20110049456
- Publication date Mar 3, 2011
- Macronix International Co., Ltd.
- HSIANG-LAN LUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Channel Transistor Structure and Manufacturing Method Thereof
- Publication number 20110012192
- Publication date Jan 20, 2011
- Macronix International Co., Ltd.
- Tzu-Hsuan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR REDUCING DEFECT BITS IN PHASE CHANGE MEMORY
- Publication number 20100328995
- Publication date Dec 30, 2010
- Macronix International Co., Ltd.
- YEN-HAO SHIH
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY HAVING ONE OR MORE NON-CONSTANT DOPING PROFILES
- Publication number 20100328996
- Publication date Dec 30, 2010
- Macronix International Co., Ltd.
- YEN-HAO SHIH
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD FOR SENSING AND FIXING MARGIN CELLS
- Publication number 20100321987
- Publication date Dec 23, 2010
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Application
3D MEMORY ARRAY ARRANGED FOR FN TUNNELING PROGRAM AND ERASE
- Publication number 20100265773
- Publication date Oct 21, 2010
- Macronix International Co., Ltd.
- HSIANG-LAN LUNG
- G11 - INFORMATION STORAGE
Information Patent Application
REWRITABLE MEMORY DEVICE
- Publication number 20100177553
- Publication date Jul 15, 2010
- Macronix International Co., Ltd.
- MING-HSIU LEE
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE DEVICE HAVING TWO OR MORE SUBSTANTIAL AMORPHOUS REGION...
- Publication number 20100165728
- Publication date Jul 1, 2010
- Macronix International Co., Ltd.
- YEN-HAO SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ACCESS DEVICE HAVING A PN-JUNCTION WITH POLYCRYSTALLINE...
- Publication number 20100117048
- Publication date May 13, 2010
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL ACCESS DEVICE HAVING A PN-JUNCTION WITH POLYCRYSTALLINE...
- Publication number 20100117049
- Publication date May 13, 2010
- Macronix International Co., Ltd.
- HSIANG-LAN LUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a non-volatile memory device
- Publication number 20070037328
- Publication date Feb 15, 2007
- Chiahua Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-channel charge trapping memory device with sub-gate
- Publication number 20060226467
- Publication date Oct 12, 2006
- MACRONIX INTERNATIONAL CO., LTD
- Hang-Ting Lue
- G11 - INFORMATION STORAGE

Yen-Hao Shih

Person

Patents Grantslast 30 patents

3D NAND memory using two separate SSL structures in an interlaced c...

High aspect ratio etching method

Phase change memory coding

Conductor structure and method

Vertical channel transistor structure and manufacturing method thereof

Damascene conductor for 3D array

Conductor with a plurality of vertical extensions for a 3D device

NAND flash with non-trapping switch transistors

Array arrangement including carrier source

Dielectric charge trapping memory cells with redundancy

Conductor structure and method

Ge-Rich GST-212 phase change memory materials

Memory cell access device having a pn-junction with polycrystalline...

Composite target sputtering for forming doped phase change materials

Memory cell access device having a pn-junction with polycrystalline...

Method for forming interlayer connectors in a three-dimensional sta...

Phase change memory coding

Contact architecture for 3D memory array

3D two bit-per-cell NAND flash memory

Composite target sputtering for forming doped phase change materials

3D memory array arranged for FN tunneling program and erase

Memory device and method for sensing and fixing margin cells

Phase change memory with fast write characteristics

Phase change memory having one or more non-constant doping profiles

Methods and apparatus for reducing defect bits in phase change memory

3D memory array arranged for FN tunneling program and erase

Rewritable memory device based on segregation/re-absorption

Phase change device having two or more substantial amorphous region...

Patents Applicationslast 30 patents

HIGH ASPECT RATIO ETCHING METHOD

CONDUCTOR STRUCTURE AND METHOD

CONDUCTOR WITH A PLURALITY OF VERTICAL EXTENSIONS FOR A 3D DEVICE

ARRAY ARRANGEMENT INCLUDING CARRIER SOURCE

DAMASCENE CONDUCTOR FOR 3D ARRAY

ARRAY ARRANGEMENT FOR 3D NAND MEMORY

CONDUCTOR STRUCTURE AND METHOD

DIELECTRIC CHARGE TRAPPING MEMORY CELLS WITH REDUNDANCY

PHASE CHANGE MEMORY CODING

METHOD FOR FORMING INTERLAYER CONNECTORS IN A THREE-DIMENSIONAL STA...

COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS

NAND FLASH WITH NON-TRAPPING SWITCH TRANSISTORS

Ge-RICH GST-212 PHASE CHANGE MEMORY MATERIALS

3D MEMORY ARRAY ARRANGED FOR FN TUNNELING PROGRAM AND ERASE

COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS

Phase Change Memory With Fast Write Characteristics

PHASE CHANGE MEMORY CODING

3D TWO-BIT-PER-CELL NAND FLASH MEMORY

PHASE CHANGE STRUCTURE WITH COMPOSITE DOPING FOR PHASE CHANGE MEMORY

Vertical Channel Transistor Structure and Manufacturing Method Thereof

METHODS AND APPARATUS FOR REDUCING DEFECT BITS IN PHASE CHANGE MEMORY

PHASE CHANGE MEMORY HAVING ONE OR MORE NON-CONSTANT DOPING PROFILES

MEMORY DEVICE AND METHOD FOR SENSING AND FIXING MARGIN CELLS

3D MEMORY ARRAY ARRANGED FOR FN TUNNELING PROGRAM AND ERASE

REWRITABLE MEMORY DEVICE

PHASE CHANGE DEVICE HAVING TWO OR MORE SUBSTANTIAL AMORPHOUS REGION...

MEMORY CELL ACCESS DEVICE HAVING A PN-JUNCTION WITH POLYCRYSTALLINE...

MEMORY CELL ACCESS DEVICE HAVING A PN-JUNCTION WITH POLYCRYSTALLINE...

Method of manufacturing a non-volatile memory device

P-channel charge trapping memory device with sub-gate