Yeur-Luen Tu

Person

Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of planarizing a structure having an interpoly layer
- Patent number 6,143,664
- Issue date Nov 7, 2000
- Vanguard International Semiconductor Corporation
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a high surface area capacitor electrode for DRAM...
- Patent number 6,114,198
- Issue date Sep 5, 2000
- Vanguard International Semiconductor Corporation
- Sen-Huan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a high aspect ratio stacked contact hole
- Patent number 6,080,664
- Issue date Jun 27, 2000
- Vanguard International Semiconductor Corporation
- Sen-Huan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma-enhanced chemical vapor deposited SIO.sub.2 /SI.sub.3 N.sub....
- Patent number 6,017,614
- Issue date Jan 25, 2000
- Vanguard International Semiconductor Corporation
- Kwong-Jr Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma treatment method for PECVD silicon nitride films for improve...
- Patent number 5,962,344
- Issue date Oct 5, 1999
- Vanguard International Semiconductor Corporation
- Yeur-Luen Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a passivation layer for integrated circuits
- Patent number 5,943,599
- Issue date Aug 24, 1999
- Vanguard International Semiconductor Corporation
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a plasma-enhanced chemical vapor deposited SiO.su...
- Patent number 5,851,603
- Issue date Dec 22, 1998
- Vanguard International Semiconductor Corporation
- Kwong-Jr Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Yeur-Luen Tu

Person

Patents Grantslast 30 patents

Method of planarizing a structure having an interpoly layer

Method for forming a high surface area capacitor electrode for DRAM...

Method for fabricating a high aspect ratio stacked contact hole

Plasma-enhanced chemical vapor deposited SIO.sub.2 /SI.sub.3 N.sub....

Plasma treatment method for PECVD silicon nitride films for improve...

Method of fabricating a passivation layer for integrated circuits

Method for making a plasma-enhanced chemical vapor deposited SiO.su...