Yi-Fang PAI

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Fin field-effect transistor device and method of forming
- Patent number 12,094,778
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an undoped region under a source/drain
- Patent number 12,068,395
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy regions with large landing areas for contact plugs
- Patent number 12,057,450
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having source/drain structure and method of making
- Patent number 11,923,200
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain regions of semiconductor devices and methods of formin...
- Patent number 11,804,487
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Hao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy regions with large landing areas for contact plugs
- Patent number 11,652,105
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure with enlarged volu...
- Patent number 11,581,425
- Issue date Feb 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Hsi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having source/drain structure and method of making
- Patent number 11,373,867
- Issue date Jun 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain regions of semiconductor devices and methods of formin...
- Patent number 11,296,080
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Hao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device source/drain region with arsenic-containing ba...
- Patent number 10,861,935
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-I Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having source/drain structure
- Patent number 10,734,517
- Issue date Aug 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device source/drain region with arsenic-containing ba...
- Patent number 10,374,038
- Issue date Aug 6, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-I Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 10,340,190
- Issue date Jul 2, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Hao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cyclic deposition etch chemical vapor deposition epitaxy to reduce...
- Patent number 10,134,896
- Issue date Nov 20, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for reducing contact resistance in semiconductors manufactu...
- Patent number 9,997,631
- Issue date Jun 12, 2018
- Taiwan Semiconductor Manufacturing Company
- Cheng-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having source/drain structure
- Patent number 9,786,780
- Issue date Oct 10, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy profile engineering for FinFETs
- Patent number 9,666,691
- Issue date May 30, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with enhanced contact and method of manufac...
- Patent number 9,647,115
- Issue date May 9, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an integrated circuit device
- Patent number 9,564,509
- Issue date Feb 7, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Hsi Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain formation and structure
- Patent number 9,537,004
- Issue date Jan 3, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chii-Ming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial formation of source and drain regions
- Patent number 9,443,847
- Issue date Sep 13, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with engineered epitaxial region and methods of making same
- Patent number 9,412,870
- Issue date Aug 9, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- King-Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for incorporating impurity element in EPI silicon process
- Patent number 9,356,150
- Issue date May 31, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for incorporating impurity element in EPI silicon process
- Patent number 9,117,905
- Issue date Aug 25, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with engineered epitaxial region and methods of making same
- Patent number 9,117,843
- Issue date Aug 25, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- King-Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial formation of source and drain regions
- Patent number 9,012,310
- Issue date Apr 21, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an integrated circuit device
- Patent number 8,921,177
- Issue date Dec 30, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Hsi Yeh
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Asymmetric cyclic desposition etch epitaxy
- Patent number 8,906,789
- Issue date Dec 9, 2014
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung Tsai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Integrated circuits and fabrication methods thereof
- Patent number 8,778,767
- Issue date Jul 15, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming strained structures with compound profiles in sem...
- Patent number 8,343,872
- Issue date Jan 1, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20240363418
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN
- Publication number 20240363729
- Publication date Oct 31, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXY REGIONS WITH LARGE LANDING AREAS FOR CONTACT PLUGS
- Publication number 20240355826
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METH...
- Publication number 20230386935
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Regions of Semiconductor Devices and Methods of Formin...
- Publication number 20230378176
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Hao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE AND METHOD OF MAKING
- Publication number 20230298891
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hsien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device and Method of Forming
- Publication number 20220415715
- Publication date Dec 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxy Regions with Large Landing Areas for Contact Plugs
- Publication number 20220384437
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Undoped Region Under Source/Drain And Method Forming Same
- Publication number 20220336640
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH ENLARGED VOLU...
- Publication number 20220293773
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Hsi YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE AND METHOD OF MAKING
- Publication number 20220285157
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hsien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Regions of Semiconductor Devices and Methods of Formin...
- Publication number 20220231019
- Publication date Jul 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Hao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxy Regions with Large Landing Areas for Contact Plugs
- Publication number 20220028856
- Publication date Jan 27, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Methods of Forming Thereof
- Publication number 20210391324
- Publication date Dec 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Hao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE AND METHOD OF MAKING
- Publication number 20200350432
- Publication date Nov 5, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hsien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Source/Drain Region with Arsenic-Containing Ba...
- Publication number 20190355816
- Publication date Nov 21, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-I KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE SOURCE/DRAIN REGION WITH ARSENIC-CONTAINING BA...
- Publication number 20190165100
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-I KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20190164835
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Hao LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE
- Publication number 20180033887
- Publication date Feb 1, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hsien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REDUCING CONTACT RESISTANCE IN SEMICONDUCTOR MANUFACTUR...
- Publication number 20170352762
- Publication date Dec 7, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yu YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ENHANCED CONTACT AND METHOD OF MANUFAC...
- Publication number 20170110578
- Publication date Apr 20, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yasutoshi OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INCORPORATING IMPURITY ELEMENT IN EPI SILICON PROCESS
- Publication number 20150364604
- Publication date Dec 17, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device with Engineered Epitaxial Region and Methods of Making Same
- Publication number 20150364602
- Publication date Dec 17, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- King-Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL FORMATION OF SOURCE AND DRAIN REGIONS
- Publication number 20150214223
- Publication date Jul 30, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING AN INTEGRATED CIRCUIT DEVICE
- Publication number 20150118807
- Publication date Apr 30, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Hsi YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE
- Publication number 20140299945
- Publication date Oct 9, 2014
- Shih-Hsien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Cyclic Desposition Etch Epitaxy
- Publication number 20140264348
- Publication date Sep 18, 2014
- TAIWAN SEMICONDUCTOR MANUFACTURING CO, LTD.
- Chun Hsiung Tsai
- C30 - CRYSTAL GROWTH
Information Patent Application
CYCLIC DEPOSITION ETCH CHEMICAL VAPOR DEPOSITION EPITAXY TO REDUCE...
- Publication number 20140246710
- Publication date Sep 4, 2014
- Taiwan Semiconductor Manufacturing Co., LTD
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL FORMATION OF SOURCE AND DRAIN REGIONS
- Publication number 20130328126
- Publication date Dec 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device with Engineered Epitaxial Region and Methods of Making Same
- Publication number 20130062670
- Publication date Mar 14, 2013
- Taiwan Semiconductor Manfacturing Company, Ltd.
- King-Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS

Yi-Fang PAI

Person

Patents Grantslast 30 patents

Fin field-effect transistor device and method of forming

Method for forming an undoped region under a source/drain

Epitaxy regions with large landing areas for contact plugs

Integrated circuits having source/drain structure and method of making

Source/drain regions of semiconductor devices and methods of formin...

Epitaxy regions with large landing areas for contact plugs

Method for manufacturing semiconductor structure with enlarged volu...

Integrated circuits having source/drain structure and method of making

Source/drain regions of semiconductor devices and methods of formin...

Semiconductor device source/drain region with arsenic-containing ba...

Integrated circuits having source/drain structure

Semiconductor device source/drain region with arsenic-containing ba...

Semiconductor device structure and method for forming the same

Cyclic deposition etch chemical vapor deposition epitaxy to reduce...

Methods for reducing contact resistance in semiconductors manufactu...

Integrated circuits having source/drain structure

Epitaxy profile engineering for FinFETs

Semiconductor structure with enhanced contact and method of manufac...

Method of fabricating an integrated circuit device

Source/drain formation and structure

Epitaxial formation of source and drain regions

Device with engineered epitaxial region and methods of making same

Method for incorporating impurity element in EPI silicon process

Method for incorporating impurity element in EPI silicon process

Device with engineered epitaxial region and methods of making same

Epitaxial formation of source and drain regions

Method of fabricating an integrated circuit device

Asymmetric cyclic desposition etch epitaxy

Integrated circuits and fabrication methods thereof

Method of forming strained structures with compound profiles in sem...

Patents Applicationslast 30 patents

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN

EPITAXY REGIONS WITH LARGE LANDING AREAS FOR CONTACT PLUGS

SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METH...

Source/Drain Regions of Semiconductor Devices and Methods of Formin...

INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE AND METHOD OF MAKING

Fin Field-Effect Transistor Device and Method of Forming

Epitaxy Regions with Large Landing Areas for Contact Plugs

Undoped Region Under Source/Drain And Method Forming Same

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH ENLARGED VOLU...

INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE AND METHOD OF MAKING

Source/Drain Regions of Semiconductor Devices and Methods of Formin...

Epitaxy Regions with Large Landing Areas for Contact Plugs

Semiconductor Device and Methods of Forming Thereof

INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE AND METHOD OF MAKING

Semiconductor Device Source/Drain Region with Arsenic-Containing Ba...

SEMICONDUCTOR DEVICE SOURCE/DRAIN REGION WITH ARSENIC-CONTAINING BA...

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE

METHODS FOR REDUCING CONTACT RESISTANCE IN SEMICONDUCTOR MANUFACTUR...

SEMICONDUCTOR STRUCTURE WITH ENHANCED CONTACT AND METHOD OF MANUFAC...

METHOD FOR INCORPORATING IMPURITY ELEMENT IN EPI SILICON PROCESS

Device with Engineered Epitaxial Region and Methods of Making Same

EPITAXIAL FORMATION OF SOURCE AND DRAIN REGIONS

METHOD OF FABRICATING AN INTEGRATED CIRCUIT DEVICE

INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE

Asymmetric Cyclic Desposition Etch Epitaxy

CYCLIC DEPOSITION ETCH CHEMICAL VAPOR DEPOSITION EPITAXY TO REDUCE...

EPITAXIAL FORMATION OF SOURCE AND DRAIN REGIONS

Device with Engineered Epitaxial Region and Methods of Making Same