Yi-Jen Chan

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Device and method for high pressure anneal
- Patent number 12,183,573
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for high pressure anneal
- Patent number 11,854,800
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,677,015
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Wen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,631,612
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hua Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for high pressure anneal
- Patent number 11,037,781
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure
- Patent number 9,419,160
- Issue date Aug 16, 2016
- Episil-Precision Inc.
- Jung Hsuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for recording critical patterns with different mark lengths...
- Patent number 8,385,172
- Issue date Feb 26, 2013
- MediaTek Inc.
- You-Wen Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating a necked FINFET device
- Patent number 7,122,412
- Issue date Oct 17, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Haur-Ywh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge device protection structure
- Patent number 6,800,516
- Issue date Oct 5, 2004
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Ling Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded SOI wafer with <100> device layer and &#x000...
- Patent number 6,784,071
- Issue date Aug 31, 2004
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Haur-Ywh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene gate electrode method for fabricating field effect transi...
- Patent number 6,673,683
- Issue date Jan 6, 2004
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Ming Sheu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance PD SOI tunneling-biased MOSFET
- Patent number 6,674,130
- Issue date Jan 6, 2004
- Taiwan Semiconductor Manufacturing Company
- Kuo-Nan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance PD SOI tunneling-biased MOSFET
- Patent number 6,518,105
- Issue date Feb 11, 2003
- Taiwan Semiconductor Manufacturing Company
- Kuo-Nan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for minimizing total test time for testing factories
- Patent number 6,480,794
- Issue date Nov 12, 2002
- Taiwan Semiconductor Manufacturing Company
- Ming-Hsiu Hsieh
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Patents Applicationslast 30 patents

Information Patent Application
DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL
- Publication number 20250079162
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL
- Publication number 20230386832
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230253246
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hua CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20220376091
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Wen CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210375665
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Hua CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20210359111
- Publication date Nov 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Wen CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device and Method for High Pressure Anneal
- Publication number 20210280414
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR STRUCTURE
- Publication number 20160020346
- Publication date Jan 21, 2016
- EPISIL SEMICONDUCTOR WAFER INC
- Jung Hsuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CALIBRATION APPARATUS FOR PERFORMING PHASE DETECTION/EDGE DISTANCE...
- Publication number 20130099835
- Publication date Apr 25, 2013
- You-Wen Chang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR RECORDING CRITICAL PATTERNS WITH DIFFERENT MARK LENGTHS...
- Publication number 20120039157
- Publication date Feb 16, 2012
- You-Wen Chang
- G11 - INFORMATION STORAGE
Information Patent Application
Necked Finfet device
- Publication number 20070063261
- Publication date Mar 22, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Haur-Ywh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a necked finfet device
- Publication number 20050253193
- Publication date Nov 17, 2005
- Taiwan Semiconductor Manufacturing Co.
- Haur-Ywh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bonded SOI wafer with <100> device layer and <110> substrate for pe...
- Publication number 20040266128
- Publication date Dec 30, 2004
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Haur-Ywh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED SOI WAFER WITH <100> DEVICE LAYER AND <110> SUBSTRATE FOR PE...
- Publication number 20040151917
- Publication date Aug 5, 2004
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Haur-Ywh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrostatic discharge device protection structure
- Publication number 20040140505
- Publication date Jul 22, 2004
- Yi-Lang Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI MOSFET with compact body-tied-source structure
- Publication number 20030222308
- Publication date Dec 4, 2003
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ke-Wei Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance PD SOI tunneling-biased mosfet
- Publication number 20030122214
- Publication date Jul 3, 2003
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Kuo-Nan Yang
- H01 - BASIC ELECTRIC ELEMENTS

Yi-Jen Chan

Person

Patents Grantslast 30 patents

Device and method for high pressure anneal

Device and method for high pressure anneal

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device and manufacturing method thereof

Device and method for high pressure anneal

Nitride semiconductor structure

Method for recording critical patterns with different mark lengths...

Method of fabricating a necked FINFET device

Electrostatic discharge device protection structure

Bonded SOI wafer with &#x0003C;100&#x0003E; device layer and &#x000...

Damascene gate electrode method for fabricating field effect transi...

High performance PD SOI tunneling-biased MOSFET

High performance PD SOI tunneling-biased MOSFET

Method for minimizing total test time for testing factories

Patents Applicationslast 30 patents

DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL

DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

Device and Method for High Pressure Anneal

NITRIDE SEMICONDUCTOR STRUCTURE

CALIBRATION APPARATUS FOR PERFORMING PHASE DETECTION/EDGE DISTANCE...

METHOD FOR RECORDING CRITICAL PATTERNS WITH DIFFERENT MARK LENGTHS...

Necked Finfet device

Method of fabricating a necked finfet device

Bonded SOI wafer with <100> device layer and <110> substrate for pe...

BONDED SOI WAFER WITH <100> DEVICE LAYER AND <110> SUBSTRATE FOR PE...

Electrostatic discharge device protection structure

SOI MOSFET with compact body-tied-source structure

High performance PD SOI tunneling-biased mosfet

Bonded SOI wafer with <100> device layer and &#x000...