Yi Ma

Person

Orlando, FL, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate dielectric structure for reducing boron penetration and curren...
- Patent number 7,081,419
- Issue date Jul 25, 2006
- Agere Systems Inc.
- Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a bipolar transistor with an oxygen implanted emit...
- Patent number 6,815,302
- Issue date Nov 9, 2004
- Agere Systems Inc.
- Alan Sangone Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an integrated circuit device including a graded,...
- Patent number 6,670,242
- Issue date Dec 30, 2003
- Agere Systems Inc.
- David Charles Brady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with a low K material in emitter base spacer reg...
- Patent number 6,657,281
- Issue date Dec 2, 2003
- Agere Systems Inc.
- Yih-Feng Chyan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound, high-K, gate and capacitor insulator layer
- Patent number 6,548,854
- Issue date Apr 15, 2003
- Agere Systems Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high quality gate oxide layer having a uniform...
- Patent number 6,544,907
- Issue date Apr 8, 2003
- Agere Systems Inc.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit fabrication
- Patent number 6,537,887
- Issue date Mar 25, 2003
- Agere Systems Inc.
- Yih-Feng Chyan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical replacement gate (VRG) MOSFET with a conductive layer adja...
- Patent number 6,518,622
- Issue date Feb 11, 2003
- Agere Systems Inc.
- Hongzong Chew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 6,509,242
- Issue date Jan 21, 2003
- Agere Systems Inc.
- Michel Ranjit Frei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a reverse gate structure with a spin on glass pro...
- Patent number 6,506,673
- Issue date Jan 14, 2003
- Agere Systems Guardian Corp.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for gate oxide side-wall protection from plasma damage to f...
- Patent number 6,475,842
- Issue date Nov 5, 2002
- Agere Systems Inc.
- Kean Syn Cheah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming bipolar transistors comprising a native oxide lay...
- Patent number 6,451,660
- Issue date Sep 17, 2002
- Agere Systems Guardian Corp.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-profile engineering at the poly/gate oxide and gate oxide/SI inte...
- Patent number 6,440,829
- Issue date Aug 27, 2002
- Agere Systems Guardian Corp.
- Pradip K. Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered dielectric film structure suitable for gate dielectric appl...
- Patent number 6,417,570
- Issue date Jul 9, 2002
- Agere Systems Guardian Corporation
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure for integrated circuit fabrication
- Patent number 6,320,238
- Issue date Nov 20, 2001
- Agere Systems Guardian Corp.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, trench isolation structure and methods of for...
- Patent number 6,313,007
- Issue date Nov 6, 2001
- Agere Systems Guardian Corp.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a plasma nitride film suitable for gate dielect...
- Patent number 6,309,932
- Issue date Oct 30, 2001
- Agere Systems Guardian Corp.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for benchmarking thin film measurement tools
- Patent number 6,303,397
- Issue date Oct 16, 2001
- Agere Systems Guardian Corp.
- Yuanning Chen
- G01 - MEASURING TESTING
Information Patent Grant
System and method for forming a uniform thin gate oxide layer
- Patent number 6,281,138
- Issue date Aug 28, 2001
- Agere Systems Guardian Corp.
- David C. Brady
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing semiconductor devices having high pressure...
- Patent number 6,274,490
- Issue date Aug 14, 2001
- Lucent Technologies Inc.
- Yih-Feng Chyan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for forming a uniform thin gate oxide layer
- Patent number 6,246,095
- Issue date Jun 12, 2001
- Agere Systems Guardian Corp.
- David C. Brady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-germanium transistor and associated methods
- Patent number 6,235,560
- Issue date May 22, 2001
- Agere Systems Guardian Corp.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide/nitride stacked gate dielectric and associated methods
- Patent number 6,207,586
- Issue date Mar 27, 2001
- Lucent Technologies Inc.
- Yi Ma
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming a nitride layer suitable for use in advanced gat...
- Patent number 6,177,363
- Issue date Jan 23, 2001
- Lucent Technologies Inc.
- Pradip K. Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ boron doped polysilicon with dual layer and dual grain stru...
- Patent number 6,162,711
- Issue date Dec 19, 2000
- Lucent Technologies, Inc.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycide gate structure with intermediate barrier
- Patent number 6,147,388
- Issue date Nov 14, 2000
- Lucent Technologies, Inc.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit fabrication
- Patent number 6,074,933
- Issue date Jun 13, 2000
- Lucent Technologies Inc.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of SiD.sub.4 for deposition of ultra thin and controllable oxides
- Patent number 6,025,280
- Issue date Feb 15, 2000
- Lucent Technologies Inc.
- David C. Brady
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of integrated circuit fabrication
- Patent number 6,013,556
- Issue date Jan 11, 2000
- Lucent Technologies Inc.
- Gregg Sumio Higashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for developing images in energy sensitive materials
- Patent number 6,013,418
- Issue date Jan 11, 2000
- Lucent Technologies Inc.
- Yi Ma
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
Novel gate dielectric structure for reducing boron penetration and...
- Publication number 20040238905
- Publication date Dec 2, 2004
- Lucent Technologies Inc.
- Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making a bipolar transistor with an oxygen implanted emi...
- Publication number 20030119270
- Publication date Jun 26, 2003
- Agere Systems Guardian Corporation
- Alan Sangone Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a compound, high-K, gate and capacitor insulator l...
- Publication number 20020197790
- Publication date Dec 26, 2002
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A REVERSE GATE STRUCTURE WITH A SPIN ON GLASS PRO...
- Publication number 20020185739
- Publication date Dec 12, 2002
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor
- Publication number 20020093031
- Publication date Jul 18, 2002
- Michel Ranjit Frei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit fabrication
- Publication number 20020063308
- Publication date May 30, 2002
- Yih-Feng Chyan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Clustered system and method for formation of integrated circuit dev...
- Publication number 20010012667
- Publication date Aug 9, 2001
- Yi Ma
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Person

Patents Grantslast 30 patents

Gate dielectric structure for reducing boron penetration and curren...

Method of making a bipolar transistor with an oxygen implanted emit...

Method for making an integrated circuit device including a graded,...

Bipolar transistor with a low K material in emitter base spacer reg...

Compound, high-K, gate and capacitor insulator layer

Method of forming a high quality gate oxide layer having a uniform...

Integrated circuit fabrication

Vertical replacement gate (VRG) MOSFET with a conductive layer adja...

Heterojunction bipolar transistor

Method of forming a reverse gate structure with a spin on glass pro...

Process for gate oxide side-wall protection from plasma damage to f...

Method of forming bipolar transistors comprising a native oxide lay...

N-profile engineering at the poly/gate oxide and gate oxide/SI inte...

Layered dielectric film structure suitable for gate dielectric appl...

Gate structure for integrated circuit fabrication

Semiconductor device, trench isolation structure and methods of for...

Process for forming a plasma nitride film suitable for gate dielect...

Method for benchmarking thin film measurement tools

System and method for forming a uniform thin gate oxide layer

Method of manufacturing semiconductor devices having high pressure...

System and method for forming a uniform thin gate oxide layer

Silicon-germanium transistor and associated methods

Oxide/nitride stacked gate dielectric and associated methods

Method for forming a nitride layer suitable for use in advanced gat...

In-situ boron doped polysilicon with dual layer and dual grain stru...

Polycide gate structure with intermediate barrier

Integrated circuit fabrication

Use of SiD.sub.4 for deposition of ultra thin and controllable oxides

Method of integrated circuit fabrication

Method for developing images in energy sensitive materials

Patents Applicationslast 30 patents

Novel gate dielectric structure for reducing boron penetration and...

Method for making a bipolar transistor with an oxygen implanted emi...

Method of making a compound, high-K, gate and capacitor insulator l...

METHOD OF FORMING A REVERSE GATE STRUCTURE WITH A SPIN ON GLASS PRO...

Heterojunction bipolar transistor

Integrated circuit fabrication

Clustered system and method for formation of integrated circuit dev...