Yi Ma

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Task modification after task initiation
- Patent number 11,908,473
- Issue date Feb 20, 2024
- Apple Inc.
- Yi Ma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Varied silicon richness silicon nitride formation
- Patent number 11,069,789
- Issue date Jul 20, 2021
- MONTEREY RESEARCH, LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Secure data transmission using natural language
- Patent number 10,721,068
- Issue date Jul 21, 2020
- botbotbotbot Inc.
- Yi Ma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Varied silicon richness silicon nitride formation
- Patent number 10,644,126
- Issue date May 5, 2020
- MONTEREY RESEARCH, LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Biased deep trench isolation
- Patent number 10,269,850
- Issue date Apr 23, 2019
- OmniVision Technologies, Inc.
- Yuanwei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Secure data transmission using natural language
- Patent number 10,153,902
- Issue date Dec 11, 2018
- botbotbotbot Inc.
- Yi Ma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Generating additional training data for a natural language understa...
- Patent number 10,140,977
- Issue date Nov 27, 2018
- botbotbotbot Inc.
- Antoine Raux
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive switching devices having a switching layer and an interme...
- Patent number 9,818,939
- Issue date Nov 14, 2017
- Adesto Technologies Corporation
- John R. Jameson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Biased deep trench isolation
- Patent number 9,806,117
- Issue date Oct 31, 2017
- OmniVision Technologies, Inc.
- Yuanwei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable impedance elements and devices that include such elements
- Patent number 9,401,472
- Issue date Jul 26, 2016
- Adesto Technologies Corporation
- Chakravarthy Gopalan
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells with vertically integrated tunnel access device and pr...
- Patent number 9,391,270
- Issue date Jul 12, 2016
- Adesto Technologies Corporation
- Venkatesh P. Gopinath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods of conducting bridge random access memory (CBRA...
- Patent number 9,306,161
- Issue date Apr 5, 2016
- Adesto Technologies Corporation
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Landmark-based location belief tracking for voice-controlled naviga...
- Patent number 9,127,950
- Issue date Sep 8, 2015
- Honda Motor Co., Ltd.
- Antoine Raux
- G01 - MEASURING TESTING
Information Patent Grant
Solid electrolyte memory elements with electrode interface for impr...
- Patent number 9,099,633
- Issue date Aug 4, 2015
- Adesto Technologies Corporation
- Chakravarthy Gopalan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varied silicon richness silicon nitride formation
- Patent number 9,012,333
- Issue date Apr 21, 2015
- Spansion LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating memory cells having fin structures with sem...
- Patent number 8,987,092
- Issue date Mar 24, 2015
- Spansion LLC
- Inkuk Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for high figure-of-merit in nanostructured thermoelectric m...
- Patent number 8,865,995
- Issue date Oct 21, 2014
- Trustees of Boston College
- Zhifeng Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching devices having a buffer layer and methods of fo...
- Patent number 8,866,122
- Issue date Oct 21, 2014
- Adesto Technologies Corporation
- Wei Ti Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching devices having alloyed electrodes and methods o...
- Patent number 8,847,192
- Issue date Sep 30, 2014
- Adesto Technologies France SARL
- Wei Ti Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable impedance memory device structure and method of manufactur...
- Patent number 8,829,482
- Issue date Sep 9, 2014
- Adesto Technologies Corporation
- Antonio R. Gallo
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for fabricating memory cells having fin structures with smo...
- Patent number 8,563,441
- Issue date Oct 22, 2013
- Spansion LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conducting bridge random access memory (CBRAM) device structures
- Patent number 8,426,839
- Issue date Apr 23, 2013
- Adesto Technologies Corporation
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition processes for non-volatile memory devices
- Patent number 8,043,907
- Issue date Oct 25, 2011
- Applied Materials, Inc.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-D integrated circuit system and method
- Patent number 7,998,846
- Issue date Aug 16, 2011
- Spansion LLC
- Eunha Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated scheme for forming inter-poly dielectrics for non-volati...
- Patent number 7,910,446
- Issue date Mar 22, 2011
- Applied Materials, Inc.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing high dielectric constant film
- Patent number 7,871,942
- Issue date Jan 18, 2011
- Applied Materials, Inc.
- Shreyas S. Kher
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated circuit fabrication process using a compression cap laye...
- Patent number 7,863,193
- Issue date Jan 4, 2011
- Applied Materials, Inc.
- Yi Ma
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Integrated circuit fabrication process with minimal post-laser anne...
- Patent number 7,737,036
- Issue date Jun 15, 2010
- Applied Materials, Inc.
- Yi Ma
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Atomic layer deposition processes for non-volatile memory devices
- Patent number 7,659,158
- Issue date Feb 9, 2010
- Applied Materials, Inc.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode dopant activation method for semiconductor manufactu...
- Patent number 7,611,976
- Issue date Nov 3, 2009
- Applied Materials, Inc.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TASK MODIFICATION AFTER TASK INITIATION
- Publication number 20230368788
- Publication date Nov 16, 2023
- Apple Inc.
- Yi MA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
USER INPUT INTERPRETATION USING DISPLAY REPRESENTATIONS
- Publication number 20220374109
- Publication date Nov 24, 2022
- Apple Inc.
- Conrad B. KRAMER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VARIED SILICON RICHNESS SILICON NITRIDE FORMATION
- Publication number 20220005933
- Publication date Jan 6, 2022
- MONTEREY RESEARCH, LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED SILICON RICHNESS SILICON NITRIDE FORMATION
- Publication number 20200365709
- Publication date Nov 19, 2020
- MONTEREY RESEARCH, LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GENERATING ADDITIONAL TRAINING DATA FOR A NATURAL LANGUAGE UNDERSTA...
- Publication number 20200043469
- Publication date Feb 6, 2020
- botbotbotbot Inc.
- Antoine Raux
- G10 - MUSICAL INSTRUMENTS ACOUSTICS
Information Patent Application
Secure Data Transmission Using Natural Language
- Publication number 20200044850
- Publication date Feb 6, 2020
- botbotbotbot Inc.
- Yi Ma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BIASED DEEP TRENCH ISOLATION
- Publication number 20180033811
- Publication date Feb 1, 2018
- OMNIVISION TECHNOLOGIES, INC.
- Yuanwei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED SILICON RICHNESS SILICON NITRIDE FORMATION
- Publication number 20180006132
- Publication date Jan 4, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIASED DEEP TRENCH ISOLATION
- Publication number 20170271384
- Publication date Sep 21, 2017
- OMNIVISION TECHNOLOGIES, INC.
- Yuanwei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Switching Devices Having a Switching Layer and an Interme...
- Publication number 20160118585
- Publication date Apr 28, 2016
- ADESTO TECHNOLOGIES CORPORATION
- John R. Jameson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE RESISTANCE MEMORY ELEMENTS WITH ELECTRODE INTERFACE LA...
- Publication number 20160043310
- Publication date Feb 11, 2016
- ADESTO TECHNOLOGIES CORPORATION
- Chakravarthy Gopalan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED SILICON RICHNESS SILICON NITRIDE FORMATION
- Publication number 20150194499
- Publication date Jul 9, 2015
- SPANSION LLC
- Yi MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR HIGH FIGURE-OF-MERIT IN NANOSTRUCTURED THERMOELECTRIC M...
- Publication number 20150068574
- Publication date Mar 12, 2015
- Massachusetts Institute of Technology
- Zhifeng Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE IMPEDANCE MEMORY ELEMENTS AND CORRESPONDING METHODS
- Publication number 20140293676
- Publication date Oct 2, 2014
- Wei Ti Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Switching Devices Having a Switching Layer And An Interme...
- Publication number 20140246641
- Publication date Sep 4, 2014
- ADESTO TECHNOLOGIES CORPORATION
- John R. Jameson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LANDMARK-BASED LOCATION BELIEF TRACKING FOR VOICE-CONTROLLED NAVIGA...
- Publication number 20130297321
- Publication date Nov 7, 2013
- Antoine Raux
- G01 - MEASURING TESTING
Information Patent Application
SOLID ELECTROLYTE MEMORY ELEMENTS WITH ELECTRODE INTERFACE FOR IMPR...
- Publication number 20130285004
- Publication date Oct 31, 2013
- Chakravarthy Gopalan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Switching Devices Having Alloyed Electrodes And Methods o...
- Publication number 20130062587
- Publication date Mar 14, 2013
- ADESTO TECHNOLOGIES CORP.
- Wei Ti Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D INTEGRATED CIRCUIT SYSTEM AND METHOD
- Publication number 20110272775
- Publication date Nov 10, 2011
- Eunha KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED SILICON RICHNESS SILICON NITRIDE FORMATION
- Publication number 20110057248
- Publication date Mar 10, 2011
- Yi MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic Layer Deposition Processes for Non-Volatile Memory Devices
- Publication number 20100102376
- Publication date Apr 29, 2010
- Applied Materials, Inc.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3-D INTEGRATED CIRCUIT SYSTEM AND METHOD
- Publication number 20100065940
- Publication date Mar 18, 2010
- Eunha KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING MEMORY CELLS HAVING FIN STRUCTURES WITH SMO...
- Publication number 20090269918
- Publication date Oct 29, 2009
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING MEMORY CELLS HAVING FIN STRUCTURES WITH SEM...
- Publication number 20090269916
- Publication date Oct 29, 2009
- Inkuk KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF SILICON-RICH NITRIDE IN A FLASH MEMORY DEVICE
- Publication number 20090261406
- Publication date Oct 22, 2009
- Youseok SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILM
- Publication number 20090246972
- Publication date Oct 1, 2009
- SHREYAS S. KHER
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ATOMIC LAYER DEPOSITION PROCESSES FOR NON-VOLATILE MEMORY DEVICES
- Publication number 20090242957
- Publication date Oct 1, 2009
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-STRUCTURE VARIABLE SILICON RICHNESS NITRIDE FOR MLC FLASH ME...
- Publication number 20090152617
- Publication date Jun 18, 2009
- SPANSION LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULATING THE STRESS OF POLY-CRYSTALINE SILICON FILMS AND SURROUND...
- Publication number 20090065816
- Publication date Mar 12, 2009
- APPLIED MATERIALS, INC.
- KEVIN L. CUNNINGHAM
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED CIRCUIT FABRICATION PROCESS FOR A HIGH MELTING TEMPERATU...
- Publication number 20090042353
- Publication date Feb 12, 2009
- Yi Ma
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR

Person

Patents Grantslast 30 patents

Task modification after task initiation

Varied silicon richness silicon nitride formation

Secure data transmission using natural language

Varied silicon richness silicon nitride formation

Biased deep trench isolation

Secure data transmission using natural language

Generating additional training data for a natural language understa...

Resistive switching devices having a switching layer and an interme...

Biased deep trench isolation

Programmable impedance elements and devices that include such elements

Memory cells with vertically integrated tunnel access device and pr...

Fabrication methods of conducting bridge random access memory (CBRA...

Landmark-based location belief tracking for voice-controlled naviga...

Solid electrolyte memory elements with electrode interface for impr...

Varied silicon richness silicon nitride formation

Methods for fabricating memory cells having fin structures with sem...

Methods for high figure-of-merit in nanostructured thermoelectric m...

Resistive switching devices having a buffer layer and methods of fo...

Resistive switching devices having alloyed electrodes and methods o...

Variable impedance memory device structure and method of manufactur...

Methods for fabricating memory cells having fin structures with smo...

Conducting bridge random access memory (CBRAM) device structures

Atomic layer deposition processes for non-volatile memory devices

3-D integrated circuit system and method

Integrated scheme for forming inter-poly dielectrics for non-volati...

Methods for manufacturing high dielectric constant film

Integrated circuit fabrication process using a compression cap laye...

Integrated circuit fabrication process with minimal post-laser anne...

Atomic layer deposition processes for non-volatile memory devices

Gate electrode dopant activation method for semiconductor manufactu...

Patents Applicationslast 30 patents

TASK MODIFICATION AFTER TASK INITIATION

USER INPUT INTERPRETATION USING DISPLAY REPRESENTATIONS

VARIED SILICON RICHNESS SILICON NITRIDE FORMATION

VARIED SILICON RICHNESS SILICON NITRIDE FORMATION

GENERATING ADDITIONAL TRAINING DATA FOR A NATURAL LANGUAGE UNDERSTA...

Secure Data Transmission Using Natural Language

BIASED DEEP TRENCH ISOLATION

VARIED SILICON RICHNESS SILICON NITRIDE FORMATION

BIASED DEEP TRENCH ISOLATION

Resistive Switching Devices Having a Switching Layer and an Interme...

PROGRAMMABLE RESISTANCE MEMORY ELEMENTS WITH ELECTRODE INTERFACE LA...

VARIED SILICON RICHNESS SILICON NITRIDE FORMATION

METHODS FOR HIGH FIGURE-OF-MERIT IN NANOSTRUCTURED THERMOELECTRIC M...

PROGRAMMABLE IMPEDANCE MEMORY ELEMENTS AND CORRESPONDING METHODS

Resistive Switching Devices Having a Switching Layer And An Interme...

LANDMARK-BASED LOCATION BELIEF TRACKING FOR VOICE-CONTROLLED NAVIGA...

SOLID ELECTROLYTE MEMORY ELEMENTS WITH ELECTRODE INTERFACE FOR IMPR...

Resistive Switching Devices Having Alloyed Electrodes And Methods o...

3D INTEGRATED CIRCUIT SYSTEM AND METHOD

VARIED SILICON RICHNESS SILICON NITRIDE FORMATION

Atomic Layer Deposition Processes for Non-Volatile Memory Devices

3-D INTEGRATED CIRCUIT SYSTEM AND METHOD

METHODS FOR FABRICATING MEMORY CELLS HAVING FIN STRUCTURES WITH SMO...

METHODS FOR FABRICATING MEMORY CELLS HAVING FIN STRUCTURES WITH SEM...

USE OF SILICON-RICH NITRIDE IN A FLASH MEMORY DEVICE

METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILM

ATOMIC LAYER DEPOSITION PROCESSES FOR NON-VOLATILE MEMORY DEVICES

HETERO-STRUCTURE VARIABLE SILICON RICHNESS NITRIDE FOR MLC FLASH ME...

MODULATING THE STRESS OF POLY-CRYSTALINE SILICON FILMS AND SURROUND...

INTEGRATED CIRCUIT FABRICATION PROCESS FOR A HIGH MELTING TEMPERATU...