Yigong Wang

Person

Rutland, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Hybrid electronically erasable programmable read-only memory (EEPRO...
- Patent number 10,297,605
- Issue date May 21, 2019
- ALLEGRO MICROSYSTEMS, LLC
- Yigong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical hall effect element with improved sensitivity
- Patent number 10,205,093
- Issue date Feb 12, 2019
- ALLEGRO MICROSYSTEMS, LLC
- Yigong Wang
- G01 - MEASURING TESTING
Information Patent Grant
Hybrid electrically erasable programmable read-only memory (EEPROM)...
- Patent number 10,038,001
- Issue date Jul 31, 2018
- ALLEGRO MICROSYSTEMS, LLC
- Yigong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical Hall Effect element with improved sensitivity
- Patent number 9,548,443
- Issue date Jan 17, 2017
- Allegro Microsystems, LLC
- Yigong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit fuse and method of fabricating the integrated ci...
- Patent number 9,184,012
- Issue date Nov 10, 2015
- Allegro Microsystems, LLC
- Yigong Wang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Vertical hall effect element with structures to improve sensitivity
- Patent number 9,099,638
- Issue date Aug 4, 2015
- Allegro Microsystems, LLC
- Yigong Wang
- G01 - MEASURING TESTING
Information Patent Grant
Hall effect element having a wide cross shape with dimensions selec...
- Patent number 8,357,983
- Issue date Jan 22, 2013
- Allegro Microsystems, Inc.
- Yigong Wang
- G01 - MEASURING TESTING
Information Patent Grant
Hall effect element having a hall plate with a perimeter having ind...
- Patent number 7,936,029
- Issue date May 3, 2011
- Allegro Microsystems, Inc.
- Yigong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically erasable programmable read only memory (EEPROM) cell
- Patent number 7,633,115
- Issue date Dec 15, 2009
- Allegro Microsystems, Inc.
- Yigong Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Hybrid Electronically Erasable Programmable Read-Only Memory (EEPRO...
- Publication number 20180366479
- Publication date Dec 20, 2018
- Allegro Microsystems, LLC
- Yigong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL HALL EFFECT ELEMENT WITH IMPROVED SENSITIVITY
- Publication number 20170084831
- Publication date Mar 23, 2017
- Allegro Microsystems, LLC
- Yigong Wang
- G01 - MEASURING TESTING
Information Patent Application
Vertical Hall Effect Element With Structures to Improve Sensitivity
- Publication number 20140264667
- Publication date Sep 18, 2014
- ALLEGRO MICROSYSTEMS, INC.
- Yigong Wang
- G01 - MEASURING TESTING
Information Patent Application
Vertical Hall Effect Element with Improved Sensitivity
- Publication number 20140210023
- Publication date Jul 31, 2014
- Yigong Wang
- G01 - MEASURING TESTING
Information Patent Application
Integrated Circuit Fuse and Method of Fabricating the Integrated Ci...
- Publication number 20140167906
- Publication date Jun 19, 2014
- Yigong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALL EFFECT ELEMENT HAVING A WIDE CROSS SHAPE WITH DIMENSIONS SELEC...
- Publication number 20130032909
- Publication date Feb 7, 2013
- ALLEGRO MICROSYSTEMS, INC.
- Yigong Wang
- G01 - MEASURING TESTING
Information Patent Application
Hall Effect Element Having a Hall Plate with a Perimeter Having Ind...
- Publication number 20100207222
- Publication date Aug 19, 2010
- Yigong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM) CELL
- Publication number 20080090365
- Publication date Apr 17, 2008
- Yigong Wang
- H01 - BASIC ELECTRIC ELEMENTS

Yigong Wang

Person

Patents Grantslast 30 patents

Hybrid electronically erasable programmable read-only memory (EEPRO...

Vertical hall effect element with improved sensitivity

Hybrid electrically erasable programmable read-only memory (EEPROM)...

Vertical Hall Effect element with improved sensitivity

Integrated circuit fuse and method of fabricating the integrated ci...

Vertical hall effect element with structures to improve sensitivity

Hall effect element having a wide cross shape with dimensions selec...

Hall effect element having a hall plate with a perimeter having ind...

Electrically erasable programmable read only memory (EEPROM) cell

Patents Applicationslast 30 patents

Hybrid Electronically Erasable Programmable Read-Only Memory (EEPRO...

VERTICAL HALL EFFECT ELEMENT WITH IMPROVED SENSITIVITY

Vertical Hall Effect Element With Structures to Improve Sensitivity

Vertical Hall Effect Element with Improved Sensitivity

Integrated Circuit Fuse and Method of Fabricating the Integrated Ci...

HALL EFFECT ELEMENT HAVING A WIDE CROSS SHAPE WITH DIMENSIONS SELEC...

Hall Effect Element Having a Hall Plate with a Perimeter Having Ind...

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM) CELL